Ring laser integrated with silicon-on-insulator waveguide
The present invention provides one or more injection-lockable whistle-geometry semiconductor ring lasers, which may be cascaded, that are integrated on a common silicon-on-insulator (SOI) substrate with a single-frequency semiconductor master laser, wherein the light output from the semiconductor master laser is used to injection-lock the first of the semiconductor ring lasers. The ring lasers can be operated in strongly injection-locked mode, while at least one of them is subjected to direct injection current modulation.
1. A semiconductor light-emitting device comprising:
a silicon-on-insulator (SOI) substrate;
a silicon injecting waveguide formed in said substrate;
a first passive silicon ring or disk formed in said substrate, said first passive silicon ring or disk directly connected to said silicon injecting waveguide in a whistle configuration;
a first silicon outcoupling waveguide formed in said substrate, said first silicon outcoupling waveguide adjacent to said first passive silicon ring or disk and laterally evanescently coupled to said first passive silicon ring or disk;
a first active ring or disk laser formed on top of said first passive silicon ring or disk, and vertically optically coupled to said first passive silicon ring or disk; and
optical output of said first active ring or disk laser is coupled to said first passive silicon ring or disk and collected by said first silicon outcoupling waveguide.
2. The device of claim 1 , wherein said first silicon outcoupling waveguide is directed at or near the Brewster angle with respect to the chip edge to reduce back reflections towards said first passive silicon ring or disk.
3. The device of claim 1 , wherein said first silicon outcoupling waveguide further delivers the output from said first active ring or disk laser to a silicon photonic-electronic circuit integrated on said substrate.
4. The device of claim 1 , wherein said first passive and active rings or disks are circular, elliptical, oval, or racetrack, and said first passive and active rings or disks are of the same size and shape or slightly different in their size and shape.
5. The device of claim 1 , wherein said first active ring or disk laser is made of III-V materials, is electrically pumped, and is integrated on top of said first passive silicon ring or disk.
6. The device of claim 1 , further including a second laser coupled to said silicon injecting waveguide, with said second laser acting as a single-frequency master laser, and said first active ring or disk laser acting as a slave laser.
7. The device of claim 6 , wherein said master laser is a distributed-Bragg-reflector or distributed-feedback laser made of III-V materials and integrated on top of said silicon injecting waveguide.
8. The device of claim 6 , wherein said first silicon outcoupling waveguide is directed at or near the Brewster angle with respect to the chip edge to reduce back reflections towards said first passive silicon ring or disk.
9. The device of claim 6 , wherein said first silicon outcoupling waveguide further delivers the output from said first active ring or disk laser to a silicon photonic-electronic circuit integrated on said substrate.
10. The device of claim 6 , wherein said first passive and active rings or disks are circular, elliptical, oval, or racetrack, and said first passive and active rings or disks are of the same size and shape or slightly different in their size and shape.
11. The device of claim 6 , wherein said first active ring or disk laser is made of III-V materials, is electrically pumped, and is integrated on top of said first passive silicon ring or disk.