Optoelectronic semiconductor chip

1. An optoelectronic semiconductor chip comprising:

a semiconductor layer sequence composed of AlInGaN comprising an n-conducting n-region, a p-conducting p-region and an intermediate active zone having at least one quantum well for generating a radiation,

wherein the p-region comprises an electron barrier layer, a contact layer and an intermediate decomposition stop layer, the contact layer being directly adjacent to a contact metallization,

wherein the decomposition stop layer comprises an aluminum content of at least 5% and at most 30% in places,

wherein an intermediate region arranged between the electron barrier layer and the decomposition stop layer has a thickness between 2 nm and 15 nm inclusive, the intermediate region being free of aluminum,

wherein the aluminum content in the decomposition stop layer varies and increases on average in a direction towards the contact layer,

wherein at least one of a thickness of the decomposition stop layer or a thickness of the decomposition stop layer together with the intermediate region is between 30 nm and 120 nm inclusive, and

wherein the decomposition stop layer comprises a plurality of first partial layers composed of AlGaN and a plurality of second partial layers composed of GaN, the first and second partial layers alternating with one another.

2. The optoelectronic semiconductor chip according to claim 1 , wherein the aluminum content is constant within the first partial layers.

3. The optoelectronic semiconductor chip according to claim 1 , wherein the aluminum content varies within the first partial layers and increases at least in regions in the direction towards the contact layer.

4. The optoelectronic semiconductor chip according to claim 1 , wherein the aluminum content of the plurality of the first partial layers in the decomposition stop layer increases in the direction towards the contact layer.

5. The optoelectronic semiconductor chip according to claim 1 , wherein all the first partial layers are of the same design.

6. The optoelectronic semiconductor chip according to claim 1 , wherein at least three and at most eight of the first partial layers are present.

7. The optoelectronic semiconductor chip according to claim 1 , wherein the aluminum content in a transition region of the decomposition stop layer decreases gradually in the direction towards the contact layer.

8. The optoelectronic semiconductor chip according to claim 1 , wherein the contact metallization comprises gold with a weight proportion of at least 10 −7 .

9. The optoelectronic semiconductor chip according to claim 1 , wherein the contact metallization comprises Ag, Al, ITO, Pt or ZnO.

10. The optoelectronic semiconductor chip according to claim 1 ,

wherein the active zone is capable of generating radiation having a wavelength of a maximum intensity between 365 nm and 405 nm inclusive,

wherein the radiation is incoherent radiation, and

wherein the semiconductor chip is a light-emitting diode.

11. The optoelectronic semiconductor chip according to claim 1 , wherein the contact layer is composed of GaN, has a thickness between 3 nm and 25 nm inclusive, and is doped with magnesium with a dopant concentration between 1×10 20 1/cm 3 and 1×10 21 1/cm 3 .

12. An optoelectronic semiconductor chip comprising:

a semiconductor layer sequence composed of AlInGaN comprising an n-conducting n-region, a p-conducting p-region and an intermediate active zone having at least one quantum well for generating a radiation,

wherein the p-region comprises an electron barrier layer, a contact layer and an intermediate decomposition stop layer, the contact layer being directly adjacent to a contact metallization,

wherein the decomposition stop layer comprises an aluminum content of at least 5% and at most 30% in places,

wherein the aluminum content in the decomposition stop layer varies, and

wherein a thickness of the decomposition stop layer is in total between 30 nm and 150 nm inclusive so that the active zone is operable in resonance with the contact metallization.

13. The optoelectronic semiconductor chip according to claim 12 ,

wherein an intermediate region between the electron barrier layer and the decomposition stop layer has a thickness between 2 nm and 15 nm inclusive, and

wherein the intermediate region is free of aluminum.

14. An optoelectronic semiconductor chip comprising:

a semiconductor layer sequence composed of AlInGaN comprising an n-conducting n-region, a p-conducting p-region and an intermediate active zone having at least one quantum well for generating a radiation,

wherein the p-region comprises an electron barrier layer, a contact layer and an intermediate decomposition stop layer, the contact layer being directly adjacent to a contact metallization,

wherein the decomposition stop layer comprises an aluminum content of at least 5% and at most 30% in places,

wherein an intermediate region arranged between the electron barrier layer and the decomposition stop layer has a thickness between 2 nm and 15 nm inclusive, the intermediate region being free of aluminum,

wherein the aluminum content in the decomposition stop layer varies and increases on average in a direction towards the contact layer,

wherein at least one of a thickness of the decomposition stop layer or a thickness of the decomposition stop layer together with the intermediate region is between 30 nm and 120 nm inclusive, and

wherein the aluminum content in a transition region of the decomposition stop layer decreases in a stepwise manner in the direction towards the contact layer.

15. The optoelectronic semiconductor chip according to claim 14 , wherein the aluminum content in the decomposition stop layer increases monotonically in the direction towards the contact layer.