Optoelectronic lighting device, carrier for an optoelectronic semiconductor chip, and optoelectronic lighting system

1. An optoelectronic lighting device, comprising:

an optoelectronic semiconductor chip comprising a top side and an underside opposite the top side,

wherein a semiconductor layer sequence is formed between the top side and the underside,

the semiconductor layer sequence comprises an active zone that generates electromagnetic radiation,

a barrier for a bonding material flowing on account of cohesive bonding of the semiconductor chip to a carrier is formed at one of the top side and the underside,

the barrier comprises one or a plurality of walls such that at least one at least partly laterally closed trough that receives the flowing bonding material is formed by the one or the plurality of walls and the one of the top side and the underside, and

wherein two troughs are formed, in each case, an electrical contact for electrically contacting the semiconductor chip is arranged within the two troughs, and the two troughs are separated from one another by one or a plurality of closed walls to prevent formation of a shunt through the flowing bonding material between the two electrical contacts.

2. The optoelectronic lighting device according to claim 1 , wherein the barrier is formed at least partly by the semiconductor layer sequence.

3. The optoelectronic lighting device according to claim 1 , wherein the bonding material provided with a cover layer comprising gold is arranged at the one of the top side and the underside.

4. The optoelectronic lighting device according to claim 1 , wherein the semiconductor chip is a laser, and the barrier is configured to be open at an HR side of the laser.

5. The optoelectronic lighting device according to claim 1 , wherein the barrier comprises one or a plurality of gaps for escape of air during cohesive bonding.

6. The optoelectronic lighting device according to claim 1 , wherein the semiconductor chip is a laser comprising a ridge waveguide, and the barrier is formed at a distance from the ridge waveguide.

7. A method of producing an optoelectronic lighting device, comprising:

providing an optoelectronic semiconductor chip comprising a top side and an underside opposite the top side, wherein a semiconductor layer sequence is formed between the top side and the underside, and the semiconductor layer sequence comprises an active zone that generates electromagnetic radiation,

forming at one of the top side and the underside a barrier for a bonding material flowing on account of cohesive bonding of the semiconductor chip to a carrier,

wherein forming the barrier comprises forming one or a plurality of walls such that at least one at least partly laterally closed trough that receives the flowing bonding material is formed by the one or the plurality of walls and the one of the top side and the underside,

wherein two troughs are formed, in each case an electrical contact for electrically contacting the semiconductor chip is arranged within the two troughs, and the two troughs are separated from one another by one or a plurality of closed walls to prevent formation of a shunt through the flowing bonding material between the two electrical contacts.

8. The method according to claim 7 , wherein the bonding material provided with a cover layer comprising gold is arranged at the one of the top side and the underside, forming the barrier comprises applying SiO 2 on the one of the top side and the underside such that the one of the top side and the underside including the cover layer is completely covered with SiO 2 , and after the covering SiO 2 is selectively removed from the cover layer such that the barrier is formed at least partly by the remaining SiO 2 .

9. An optoelectronic lighting device, comprising:

an optoelectronic semiconductor chip comprising a top side and an underside opposite the top side,

wherein a semiconductor layer sequence is formed between the top side and the underside,

the semiconductor layer sequence comprises an active zone that generates electromagnetic radiation,

a barrier for a bonding material flowing on account of cohesive bonding of the semiconductor chip to a carrier is formed at one of the top side and the underside, wherein a plurality of optoelectronic semiconductor chips configured as lasers and forming a laser bar are provided, and wherein the undersides of the semiconductor chips form a common underside of the laser bar.

10. The optoelectronic lighting device according to claim 9 , wherein the barrier comprises one or a plurality of walls such that a plurality of at least partly laterally closed troughs that receive the flowing bonding material is formed by the one or the plurality of walls and the underside, and the plurality of troughs are formed at the common underside of the laser bar, in each case one or a plurality of lasers being arranged within said troughs.

11. An optoelectronic lighting device, comprising:

an optoelectronic semiconductor chip comprising a top side and an underside opposite the top side,

wherein a semiconductor layer sequence is formed between the top side and the underside,

the semiconductor layer sequence comprises an active zone that generates electromagnetic radiation,

a barrier for a bonding material flowing on account of cohesive bonding of the semiconductor chip to a carrier is formed at one of the top side and the underside,

wherein one or a plurality of mesa trenches that receive the flowing bonding material are formed at the one of the top side and the underside, and,

wherein one of the one or the plurality of mesa trenches extends from a first facet of the semiconductor chip to a second facet opposite the first facet, the one mesa trench comprises two facet sections each adjoining one of the two facets and an intermediate section extending between the two facet sections, and a depth of the intermediate section is greater than a respective depth of the two facet sections.

12. A method of producing an optoelectronic lighting device, comprising:

providing an optoelectronic semiconductor chip comprising a top side and an underside opposite the top side, wherein a semiconductor layer sequence is formed between the top side and the underside, and the semiconductor layer sequence comprises an active zone that generates electromagnetic radiation,

forming at one of the top side and the underside a barrier for a bonding material flowing on account of cohesive bonding of the semiconductor chip to a carrier,

wherein one or a plurality of mesa trenches that receive the flowing bonding material are formed at the one of the top side and the underside, and

wherein one of the one or the plurality of mesa trenches extends from a first facet of the semiconductor chip to a second facet opposite the first facet, the one mesa trench comprises two facet sections each adjoining one of the two facets and an intermediate section extending between the two facet sections, and a depth of the intermediate section is greater than a respective depth of the two facet sections.

13. The method according to claim 12 , wherein the bonding material provided with a cover layer comprising gold is arranged at the one of the top side and the underside, forming the barrier comprises applying SiO 2 on the one of the top side and the underside such that the one of the top side and the underside including the cover layer is completely covered with SiO 2 , and after the covering SiO 2 is selectively removed from the cover layer such that the barrier is formed at least partly by the remaining SiO 2 .

14. A method of producing an optoelectronic lighting device, comprising:

providing an optoelectronic semiconductor chip comprising a top side and an underside opposite the top side, wherein a semiconductor layer sequence is formed between the top side and the underside, and the semiconductor layer sequence comprises an active zone that generates electromagnetic radiation, and

forming at one of the top side and the underside a barrier for a bonding material flowing on account of cohesive bonding of the semiconductor chip to a carrier,

wherein a plurality of optoelectronic semiconductor chips configured as lasers and forming a laser bar are provided, and wherein the undersides of the semiconductor chips form a common underside of the laser bar.

15. The method according to claim 14 , wherein forming the barrier comprises forming one or a plurality of walls such that a plurality of at least partly laterally closed troughs that receive the flowing bonding material is formed by the one or the plurality of walls and the underside, and the plurality of troughs are formed at the common underside of the laser bar, in each case one or a plurality of lasers being arranged within said troughs.

16. The method according to claim 14 , wherein the bonding material provided with a cover layer comprising gold is arranged at the one of the top side and the underside, forming the barrier comprises applying SiO 2 on the one of the top side and the underside such that the one of the top side and the underside including the cover layer is completely covered with SiO 2 , and after the covering SiO 2 is selectively removed from the cover layer such that the barrier is formed at least partly by the remaining SiO 2 .

17. A method of producing an optoelectronic lighting device, comprising:

providing an optoelectronic semiconductor chip comprising a top side and an underside opposite the top side, wherein a semiconductor layer sequence is formed between the top side and the underside, and the semiconductor layer sequence comprises an active zone that generates electromagnetic radiation, and

forming at one of the top side and the underside a barrier for a bonding material flowing on account of cohesive bonding of the semiconductor chip to a carrier,

wherein the bonding material provided with a cover layer comprising gold is arranged at the one of the top side and the underside, forming the barrier comprises applying SiO 2 on the one of the top side and the underside such that the one of the top side and the underside including the cover layer is completely covered with SiO 2 , and after the covering SiO 2 is selectively removed from the cover layer such that the barrier is formed at least partly by the remaining SiO 2 .