IP Library Granted Patent US 11,031,669
Granted Patent B2
US 11,031,669 · App. 16/082,060 · Granted Jun 8, 2021

Method of additive manufacture of a waveguide as well as waveguide devices manufactured according to this method

Inventors: Emile de Rijk (Lausanne, CH); Mirko Favre (Cully, CH); Mathieu Billod (Presilly, FR); Alexandre Dimitriades (Nyon, CH); Alessandro Macor
Assignee: SWISSTO12 SA
H01P11/002B33Y10/00B33Y80/00H01P3/123Y10T29/49016
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,031,669
App. No.
16/082,060
Granted
Jun 8, 2021
Kind
B2
Abstract

A method for producing a waveguide device, including producing a core of a non-conductive material. The core has side walls with outer surfaces and inner surfaces, the inner surfaces defining a waveguide channel. A layer of conductive metal is deposited on the inner surfaces by immersion in a fluid of reactants. The core includes at least one hole between the outer and inner surfaces, specifically used to encourage the removal of bubbles from the channel and/or the circulation of the fluid during the immersion.

Claims (15)

1. Method of manufacturing a waveguide device comprising the steps of:

making a core having sidewalls with outer and inner surfaces, the inner surfaces defining a waveguide channel, wherein the core has at least one hole formed in the sidewalls between said outer and inner surfaces of the sidewalls; and

depositing a layer of conductive metal on the inner surfaces of the core by immersion of the core in a reagent fluid, wherein the reagent fluid is supplied to the waveguide channel through the at least one hole to promote the evacuation of bubbles in the waveguide channel and/or the flow of the reagent fluid to the waveguide channel during said immersion.

2. The method of claim 1 , said channel having a larger section than said hole.

3. Method according to claim 2 , the typical dimension of the hole or holes being less than one third of the wavelength in the free space at the operating frequency of the device.

4. Method according to claim 2 , the typical dimension of the hole or holes being less than 2 millimeters.

5. Method according to claim 1 , the hole or holes extending perpendicular to said walls and to the main direction of the channel.

6. Method according to claim 1 , the manufacture of said core comprising an additive manufacturing step.

7. Method according to claim 6 , the manufacture of said core being carried out by stereolithography.

8. Method according to claim 6 , comprising a surface treatment step of said core in order to promote the bonding of the conductive metal layer.

9. Method according to claim 6 , the conductive metal deposition being carried out by a chemical process without the use of electric current.

10. Method according to claim 6 , said additive manufacturing step producing a core which includes the hole or holes.

11. Method according to claim 6 , said hole being pierced after said additive manufacturing step.

12. Method according to claim 1 , said core having a plurality of said holes between the inner and outer walls, the diameter of each hole being less than 1 mm.

13. Method according to claim 1 , the deposition comprising a step of pumping fluid through said at least one said hole.

Assignments (3)
CHANGE OF ADDRESS Recorded May 7, 2020
From: SWISSTO12 SA
To: SWISSTO12 SA
Reel/Frame 052603/0656 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 15, 2018
From: DE RIJK, EMILE; FAVRE, MIRKO; BILLOD, MATHIEU; DIMITRIADES, ALEXANDRE
To: SWISSTO12 SA
Reel/Frame 047516/0176 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 15, 2018
From: MACOR, ESTATE OF ALESSANDRO
To: SWISSTO12 SA
Reel/Frame 047516/0247 →
Priority Claims (1)
FR 16/00370 · Mar 4, 2016 · national
Continuity (1)
Related Publication 20200161738A1 · May 21, 2020
Cited By (2)
US 12,444,818 US 12,512,574