Tunnel magnetoresistive effect element, magnetic memory, and built-in memory
A TMR element includes a magnetic tunnel junction, a side wall portion that covers a side surface of the magnetic tunnel junction, and a minute particle region that is disposed in the side wall portion. The side wall portion includes an insulation material. The minute particle region includes the insulation material and a plurality of minute magnetic metal particles that are dispersed in the insulation material. The minute particle region is electrically connected in parallel with the magnetic tunnel junction.
1. A tunnel magnetoresistive effect element comprising:
a magnetic tunnel junction;
a side wall portion covering a side surface of the magnetic tunnel junction; and
a minute particle region disposed in the side wall portion,
wherein the side wall portion includes an insulation material,
the minute particle region includes the insulation material and a plurality of minute magnetic metal particles dispersed in the insulation material, and
the minute particle region is electrically connected in parallel with the magnetic tunnel junction.
2. The tunnel magnetoresistive effect element according to claim 1 ,
wherein a thickness of the minute particle region is greater than or equal to 0.2 nm and less than or equal to 50 nm.
3. The tunnel magnetoresistive effect element according to claim 1 ,
wherein a distance between one minute magnetic metal particle and another minute magnetic metal particle is greater than or equal to 0.2 nm and less than or equal to 10 nm.
4. The tunnel magnetoresistive effect element according to claim 1 ,
wherein a particle diameter of the minute magnetic metal particle is greater than or equal to 0.2 nm and less than or equal to 10 nm.
5. The tunnel magnetoresistive effect element according to claim 1 ,
wherein the minute magnetic metal particle includes at least one chemical element selected from the group consisting of Fe, Co, and Ni.
6. The tunnel magnetoresistive effect element according to claim 1 ,
wherein the magnetic tunnel junction includes a reference layer, a tunnel barrier layer stacked on the reference layer, and a magnetization free layer stacked on the tunnel barrier layer.
7. The tunnel magnetoresistive effect element according to claim 6 ,
wherein an area of the magnetization free layer is smaller than an area of the tunnel barrier layer.
8. The tunnel magnetoresistive effect element according to claim 6 , further comprising:
a non-magnetic layer disposed under the reference layer of the magnetic tunnel junction;
a pinning layer disposed under the non-magnetic layer; and
a contact layer disposed under the pinning layer,
wherein the reference layer forms antiferromagnetic coupling with the pinning layer via the non-magnetic layer, and
an area of the magnetization free layer is smaller than an area of the contact layer.
9. The tunnel magnetoresistive effect element according to claim 2 ,
wherein a distance between one minute magnetic metal particle and another minute magnetic metal particle is greater than or equal to 0.2 nm and less than or equal to 10 nm.
10. The tunnel magnetoresistive effect element according claim 2 , wherein a particle diameter of the minute magnetic metal particle is greater than or equal to 0.2 nm and less than or equal to 10 nm.
11. The tunnel magnetoresistive effect element according claim 3 ,
wherein a particle diameter of the minute magnetic metal particle is greater than or equal to 0.2 nm and less than or equal to 10 nm.
12. The tunnel magnetoresistive effect element according to claim 2 ,
wherein the minute magnetic metal particle includes at least one chemical element selected from the group consisting of Fe, Co, and Ni.
13. The tunnel magnetoresistive effect element according to claim 3 ,
wherein the minute magnetic metal particle includes at least one chemical element selected from the group consisting of Fe, Co, and Ni.
14. The tunnel magnetoresistive effect element according to claim 2 ,
wherein the magnetic tunnel junction includes a reference layer, a tunnel barrier layer stacked on the reference layer, and a magnetization free layer stacked on the tunnel barrier layer.
15. The tunnel magnetoresistive effect element according to claim 3 ,
wherein the magnetic tunnel junction includes a reference layer, a tunnel barrier layer stacked on the reference layer, and a magnetization free layer stacked on the tunnel barrier layer.
16. The tunnel magnetoresistive effect element according to claim 14 ,
wherein an area of the magnetization free layer is smaller than an area of the tunnel barrier layer.
17. The tunnel magnetoresistive effect element according to claim 14 , further comprising:
a non-magnetic layer disposed under the reference layer of the magnetic tunnel junction;
a pinning layer disposed under the non-magnetic layer; and
a contact layer disposed under the pinning layer,
wherein the reference layer forms antiferromagnetic coupling with the pinning layer via the non-magnetic layer, and
an area of the magnetization free layer is smaller than an area of the contact layer.
18. A magnetic memory comprising:
the tunnel magnetoresistive effect element according to claim 1 , as a storage element.
19. A magnetic memory comprising:
the tunnel magnetoresistive effect element according to claim 2 , as a storage element.
20. A built-in memory comprising:
the magnetic memory according to claim 18 .