Semiconductor light-emitting element and manufacturing method therefor
Disclosed is a semiconductor light emitting device including: a body with a bottom part having at least one hole formed therein; a semiconductor light emitting device chip to be placed in each of the at least one hole, with the semiconductor light emitting device chip being comprised of a plurality of semiconductor layers including an active layer for generating light by electron-hole recombination, and an electrode electrically connected to the plurality of semiconductor layers; and an encapsulating member for covering the semiconductor light emitting device chip, wherein a hole—defining inner face of the bottom part has a plurality of angles of inclination.
1. A semiconductor light emitting device comprising:
a body with a side wall and a bottom part having at least one hole formed therein, the bottom part having an upper face and a lower face, and a height defined between the lower face and the upper face;
a semiconductor light emitting device chip placed in each of the at least one hole(s), with the semiconductor light emitting device chip comprising a plurality of semiconductor layers including an active layer for generating light by electron-hole recombination, and an electrode electrically connected to the plurality of semiconductor layers, the semiconductor light emitting device chip having a height, the height of the semiconductor light emitting device chip being higher than the height of the bottom part; and
an encapsulating member positioned in a cavity defined by the side wall and the bottom part for covering the semiconductor light emitting device chip, the encapsulating member positioned on the upper face of the bottom part,
wherein the side wall defining the cavity is a smooth surface, wherein the hole defining an inner face of the bottom part has a plurality of angles of inclination, the inner face of the bottom part extending from the upper face of the bottom part to the lower face of the bottom part,
wherein the plurality of angles of inclination includes a first angle of inclination and a second angle of inclination, with the first angle of inclination being an angle between the inner face of the bottom part and the lower face of the bottom part, and the second angle of inclination being an angle between the inner face of the bottom part and an imaginary plane in parallel with the lower face of the bottom part,
wherein the first angle of inclination is greater than the second angle of inclination,
wherein the first angle of inclination is between 60° and 90°,
wherein the second angle of inclination is 60° or less, and
wherein the hole is larger than the semiconductor light emitting device chip.
2. The semiconductor light emitting device according to claim 1 , wherein a turning point where the first angle of inclination changes to the second angle of inclination is located at a lower height than the height of the semiconductor light emitting device chip.
3. The semiconductor light emitting device according to claim 1 , wherein the side wall includes at least one open section created by removing a portion of the side wall.
4. The semiconductor light emitting device according to claim 3 , wherein the bottom part excluding the hole has a length greater than a height of the side wall and a length of the semiconductor light emitting device chip.
5. The semiconductor light emitting device according to claim 1 , wherein the semiconductor light emitting device emits lights to 5 sides after a complete removal of the side wall.