Projection optical unit, optoelectronic semiconductor chip, optoelectronic illumination system, camera, terminal
A projection optical unit that images electromagnetic radiation emitted by an optoelectronic semiconductor chip includes a first lens element, a second lens element, wherein the two lens elements each include a first light-refracting surface and a second light-refracting surface located opposite the first light-refracting surface, the second light-refracting surface of the first lens element faces the first light-refracting surface of the second lens element, and the four light-refracting surfaces each include an asphere-shaped surface section such that the respective surface section forms an aspherical lens.
1. A projection optical unit that images electromagnetic radiation emitted by an optoelectronic semiconductor chip comprising:
a first lens element,
a second lens element,
wherein the two lens elements each comprise a first light-refracting surface and a second light-refracting surface located opposite the first light-refracting surface,
the second light-refracting surface of the first lens element faces the first light-refracting surface of the second lens element,
the four light-refracting surfaces each comprise an asphere-shaped surface section such that the respective surface section forms an aspherical lens, and
the asphere-shaped surface section of each light-refracting surface is defined by formula:
z
(
r
)
=
cr
2
1
+
1
-
(
1
+
k
)
c
2
r
2
+
α
1
r
2
+
α
2
r
4
+
α
3
r
6
+
a
4
r
8
+
α
5
r
10
+
α
6
r
12
+
α
7
r
14
+
α
8
r
16
,
wherein c denotes a vertex curvature, where c=1/R, R is a vertex radius, k denotes a conic constant, α 1 , α 2 , α 3 , α 4 , α 5 , α 6 , α 7 and α 8 are asphere coefficients, z is a sagitta and r is a radial distance from an optical axis of an aspherical lens.
2. The projection optical unit according to claim 1 , wherein one or a plurality of the aspherical lenses each comprise a shape of a plane asphere.
3. The projection optical unit according to claim 1 , wherein the aspherical lens of the first surface of the first lens element is defined by formula:
z
(
r
)
=
cr
2
1
+
1
-
(
1
+
k
)
c
2
r
2
+
α
1
r
2
+
α
2
r
4
+
α
3
r
6
+
a
4
r
8
+
α
5
r
10
+
α
6
r
12
+
α
7
r
14
+
α
8
r
16
,
wherein z is the sagitta in mm, r is the radial distance from the optical axis of the first lens element, c is the vertex curvature where c=1/R, R is the vertex radius where R=−5.187 mm+/−10%, k is the conic constant where k=8.381+/−10%, α1=0.000+/−0.001, α2=−0.005+/−10%, α3=−0.011+/−10%, α4=−0.001+/−10%, α5=0.0001+/−10%, α6=0.0002+/−10%, α7 =0.0003+/−10%, α8=−2.092e-005+/−10%.
4. The projection optical unit according to claim 1 , wherein the aspherical lens of the second surface of the first lens element is defined by formula:
z
(
r
)
=
cr
2
1
+
1
-
(
1
+
k
)
c
2
r
2
+
α
1
r
2
+
α
2
r
4
+
α
3
r
6
+
a
4
r
8
+
α
5
r
10
+
α
6
r
12
+
α
7
r
14
+
α
8
r
16
,
wherein z is the sagitta in mm, r is the radial distance from the optical axis of the first lens element, c is the vertex curvature where c=1/R, R is the vertex radius where R=3.426 mm+/−10%, k is the conic constant where k=−8.413+/−10%, α1=0.000+/−0.001, α2=−0.124+/−10%, α3=0.013+/−10%, α4=0.010+/−10%, α5=−5.688e-005+/−10%, α6=−0.0002+/−10%, α7=−0.0001+/−10%, α8=1.605e-005+/−10%.
5. The projection optical unit according to claim 1 , wherein the aspherical lens of the first surface of the second lens element is defined by formula:
z
(
r
)
=
cr
2
1
+
1
-
(
1
+
k
)
c
2
r
2
+
α
1
r
2
+
α
2
r
4
+
α
3
r
6
+
a
4
r
8
+
α
5
r
10
+
α
6
r
12
+
α
7
r
14
+
α
8
r
16
,
wherein z is the sagitta in mm, r is the radial distance from the optical axis of the first lens element, c is the vertex curvature where c=1/R, R is the vertex radius where R=−1.316 mm+/−10%, k is the conic constant, where k=−0.595+/−10%, α1=0.000+/−0.001, α2=0.028+/−10%, α3=−0.003+/−10%, α4=0.001+/−10%, α5=0.0006+/−10%, α6=9.062e-006+/−10%, α7=2.451e-006+/−10%, α8=−1.130e-005+/−10%.
6. The projection optical unit according to claim 1 , wherein the aspherical lens of the second surface of the second lens element is defined by formula:
z
(
r
)
=
cr
2
1
+
1
-
(
1
+
k
)
c
2
r
2
+
α
1
r
2
+
α
2
r
4
+
α
3
r
6
+
a
4
r
8
+
α
5
r
10
+
α
6
r
12
+
α
7
r
14
+
α
8
r
16
,
wherein z is the sagitta in mm, r is the radial distance from the optical axis of the first lens element, c is the vertex curvature where c=1/R, R is the vertex radius where R=2.923 mm+/−10%, k is the conic constant where k=1.617+/−10%, α1=0.000+/−0.001, α2=0.044+/−10%, α3=−0.077+/−10%, α4=−0.009+/−10%, α5=0.006+/−10%, α6=0.003+/−10%, α7=0.0009 +/−10%, α8=−0.001+/−10%.
7. The projection optical unit according to claim 1 , wherein one or a plurality of the aspherical lenses each comprise a shape corresponding to a respective stretching of a rotationally symmetrical configuration of the corresponding aspherical lens around the lens centroid of the corresponding aspherical lens by a first stretching factor of 1.1+/−10% in a radial first stretching direction and a second stretching factor of 0.89+/−10% in a radial second stretching direction extending perpendicularly to the first stretching direction.
8. The projection optical unit according to claim 1 , wherein at least one of the two lens elements or both lens elements is and/or respectively are each an injection-molded component, in particular an injection-molded component comprising polycarbonate.
9. An optoelectronic illumination system comprising the optoelectronic projection optical unit according to claim 1 and an optoelectronic semiconductor chip comprising:
a plurality of individually drivable light-emitting pixels that each comprise a semiconductor layer sequence comprising an active zone that generates electromagnetic radiation,
wherein the light-emitting pixels are respectively assigned a phosphor for a wavelength conversion of the electromagnetic radiation generated in the respective active zone, and
the assigned phosphors in part each comprise a different conversion property.
10. The optoelectronic illumination system according to claim 9 , wherein the assigned phosphors are applied on a respective top surface of the semiconductor layer sequences.
11. The optoelectronic illumination system according to claim 9 , wherein two phosphors each comprises a different conversion property are provided, and the two phosphors are assigned to the light-emitting pixels in a manner corresponding to a checkered pattern.
12. The optoelectronic illumination system according to claim 9 , wherein the phosphors are assigned to the light-emitting pixels in a manner corresponding to a pattern defined on the basis of the respective conversion properties.
13. The optoelectronic illumination system according to claim 9 , wherein the light-emitting pixels are arranged in a matrix comprising columns and rows, and 16 light-emitting pixels are provided per column and per row.
14. The optoelectronic illumination system according to claim 9 , wherein the semiconductor chip comprises a square shape comprising an edge length of 2.0 mm+/−10%.
15. The optoelectronic illumination system according to claim 9 , wherein one of the conversion properties comprises a wavelength conversion of the electromagnetic radiation generated in the respective active zone into electromagnetic radiation comprising a color temperature of 6000 K+/−800 K such that the correspondingly converted electromagnetic radiation comprises a hue of Cx=0.30 to Cx=0.37 and of Cy=0.29 to Cy=0.37 of the CIE standard colorimetric system, and another of the conversion properties comprises a wavelength conversion of the electromagnetic radiation generated in the respective active zone into electromagnetic radiation comprising a color temperature of 2250 K+/−500 K such that the correspondingly converted electromagnetic radiation comprises a hue of Cx=0.45 to Cx=0.55 and of Cy=0.40 to Cy=0.48 of the CIE standard colorimetric system.
16. A camera for recording an image, comprising an illumination system according to claim 9 .
17. A terminal comprising a camera according to claim 16 .
18. The terminal according to claim 17 , wherein the terminal is a mobile terminal.
19. The projection optical unit according to claim 1 , wherein α6, α7 and α8 are nonzero.