Composition for forming fine pattern and method for forming fine pattern using the same
View Patent ↗[Problem] To provide a composition for forming a fine pattern having a good pattern shape even after being applied to a thick-film resist, a high size reduction rate and less defects, as well as a method for forming a fine pattern using the same. [Means for Solution] A composition comprising vinyl resin, an amine compound having a specific cage-type three-dimensional structure and a solvent, and a method for forming a fine pattern using the same.
1. A composition comprising:
vinyl resin;
an amine compound represented by the following formula (I):
in which L 1 , L 2 and L 3 are each independently a divalent group formed by binding identical or different, two or three bonding units selected from the group consisting of —CR 2 — (R is each independently hydrogen or an alkyl having 1 to 6 carbon atoms), and
a solvent consisting of water,
with the proviso that the composition does not include an organic solvent.
2. The composition according to claim 1 , wherein L 1 , L 2 and L 3 are respectively a divalent group formed by binding two bonding units.
3. The composition according to claim 1 , wherein the vinyl resin is a water-soluble vinyl resin.
4. The composition according to claim 1 , wherein the vinyl resin is derived from a vinyl pyrrolidone monomer and a vinyl imidazole monomer.
5. The composition according to claim 1 , wherein the vinyl resin is a polymer represented by the following formula (II):
in which
R 1 , R 2 and R 3 are each independently hydrogen or methyl,
R 4 is alkyloxycarbonyl, hydroxy alkyloxycarbonyl, alkylcarbonyloxy or hydroxy alkylcarbonyloxy, where alkyl is a straight-chain or branched alkyl having 1 to 6 carbon atoms;
x, y and z are respectively an integer of 5 to 1000; and
each of the repeating units may be randomly bonded, regularly bonded, or bonded in a block.
6. The composition according to claim 5 , wherein the mass ratio of the amine compound to vinyl resin is not less than 0.2 and not more than 0.3.
7. The composition according to claim 6 , further comprising a surfactant.
8. A method for producing a fine pattern comprising:
a step of forming a resist pattern on a substrate;
a step of applying the composition according to claim 1 on the resist pattern to form a composition layer;
a step of mixing bake of the resist pattern and the composition layer to form an insolubilized layer in the composition layer; and
a step of removing the composition layer other than the insolubilized layer.
9. The method according to claim 8 , wherein film thickness of the resist pattern is not less than 1 μm and not more than 10 μm.
10. A method for producing a device comprising:
a step of forming a resist pattern on a substrate;
a step of applying the composition according to claim 1 on the resist pattern to form a composition layer;
a step of mixing bake of the resist pattern and the composition layer to form an insolubilized layer in the composition layer;
a step of removing the composition layer other than the insolubilized layer to form a fine pattern;
a step of ion implantation into the substrate using the fine pattern as a mask; and
a step of removing the fine pattern after the ion implantation.
11. The method according to claim 10 , wherein the composition layer other than the insolubilized layer is removed by contacting the composition layer with water, a liquid mixture of a water-soluble organic solvent and water, or an alkali aqueous solution.
12. The composition according to claim 7 , wherein the amine compound is selected from the group consisting of 2-methyl-1,4-diazabicyclo[2.2.2]octane, 1,4-diazabicyclo[2.2.2]octane-2-one, 1,4-diaza-2-oxabicyclo[2.2.2]octane, 1,5-diaza-bicyclo-[3.2.2]nonane, 1,5-diazabicyclo[3.3.2]decane, and 1,5-di-azabicyclo[3.3.3]undecane.
13. The composition according to claim 5 , wherein the mass ratio of the amine compound to vinyl resin is not less than 0.1 and not more than 0.4.
14. The composition according to claim 1 , wherein the mass ratio of the amine compound to vinyl resin is not less than 0.1 and not more than 0.4, and wherein the content of vinyl resin is 10 to 40 parts by mass based on 100 parts by mass of the composition.
15. The composition according to claim 7 , wherein L 1 , L 2 and L 3 are respectively a divalent group formed by binding two bonding units; and R is hydrogen.
16. A composition consisting of:
vinyl resin;
an amine compound represented by the following formula (I):
in which L 1 , L 2 and L 3 are each independently a divalent group formed by binding identical or different, two or three bonding units selected from the group consisting of —CR 2 — (R is each independently hydrogen or an alkyl having 1 to 6 carbon atoms), a surfactant, an additive, and
a solvent consisting of water.
17. The composition of claim 16 , wherein the composition consist of a
vinyl resin;
an amine compound represented by the following formula (I):
in which L 1 , L 2 and L 3 are each independently a divalent group formed by binding identical or different, two or three bonding units selected from the group consisting of —CR 2 — (R is each independently hydrogen or an alkyl having 1 to 6 carbon atoms), a surfactant, and
a solvent consisting of water.