Ceramic material, varistor and methods of preparing the ceramic material and the varistor
A ceramic material, a varistor and methods for forming a ceramic material and a varistor are disclosed. In an embodiment, a ceramic material includes ZnO as a main component and additives selected from the group consisting of an Al 3+ -containing solution, a Ba 2+ -containing solution, and at least one compound containing a metal element, wherein the metal element is selected from the group consisting of Bi, Sb, Co, Mn, Ni, Y, and Cr.
1. A ceramic material comprising:
ZnO as a main component; and
additives comprising an Al 3+ -containing solution, a Ba 2+ -containing solution, a compound comprising Bi, a compound comprising Sb, a compound comprising Co, a compound comprising Mn, a compound comprising Ni, and a compound comprising Y,
wherein c 1 is an equivalent content of Co in Co 3 O 4 , m is an equivalent content of Mn in Mn 3 O 4 , s is an equivalent content of Sb in Sb 2 O 3 , a is an content of Al 3+ , y is an equivalent content of Y in Y 2 O 3 , b 1 is an equivalent content of Bi in Bi 2 O 3 , n is an equivalent content of Ni in NiO, and b 2 is an content of Ba 2+ , and
wherein
0.40 mol %≤b 1 ≤0.55 mol %,
1.10 mol %≤s≤1.90 mol %,
0.50 mol %≤c 1 ≤0.80 mol %,
0.20 mol %≤m≤0.30 mol %,
0.70 mol %≤n≤1.20 mol %,
0.25 mol %≤y≤0.45 mol %,
0.003 mol %≤a≤0.006 mol %, and
0.005 mol %≤b 2 ≤0.015 mol %.
2. The ceramic material according to claim 1 , wherein a content of the additives in the ceramic material is ≤5 mol %.
3. The ceramic material according to claim 1 , wherein at least one compound is selected from the group consisting of metal oxides, metal carbonates, metal acetates, metal nitrides and mixtures thereof.
4. The ceramic material according to claim 1 , wherein the compounds are Bi 2 O 3 , Sb 2 O 3 , Co 3 O 4 , Mn 3 O 4 , NiO, and Y 2 O 3 .
5. The ceramic material according to claim 1 , wherein the Al 3+ -containing solution and the Ba 2+ -containing solution are solutions selected from the group consisting of nitrides, acetates, hydrates, and mixtures thereof.
6. The ceramic material according to claim 1 , wherein the ceramic material has a sintering temperature of between 1020° C. inclusive and 1060° C. inclusive.
7. The ceramic material according to claim 1 , wherein the compound comprising Mn is Mn 3 O 4 .
8. The ceramic material according to claim 1 , wherein the compound comprising Ni is NiO.
9. The ceramic material according to claim 1 , wherein the compound comprising Sb is Sb 2 O 3 .
10. The ceramic material according to claim 1 , wherein the compound comprising Bi is Bi 2 O 3 .
11. The ceramic material according to claim 1 , further comprising a compound comprising Cr, wherein c 2 is an equivalent content of Cr in Cr 2 O 3 , and wherein 0.00 mol %≤c 2 ≤0.10 mol %.
12. The ceramic material according to claim 11 , wherein (c 1 +5c 2 +2s+4y−m−250a)(1−z)/b 1 =F, and wherein 0.27≤F≤0.43 and z is a content of ZnO.
13. The ceramic material according to claim 11 , wherein the compound comprising Cr is Cr 2 O 3 .
14. The ceramic material according to claim 11 , wherein the compound comprising Co is Co 3 O 4 .
15. A method for forming the ceramic material according to claim 1 , the method comprising:
weighing, mixing and ball-milling a first part of additives;
adding the ZnO, and a second part of additives;
forming a homogeneous slurry; and
spray-drying the slurry to form a granule of the ceramic material.
16. The method according to claim 15 , wherein the first part of additives is at least one compound containing a metal element, wherein the metal element is selected from the group consisting of Bi, Sb, Co, Mn, Ni, Y, and Cr, and wherein the second part of additives is at least one of the Al 3+ -containing solution or the Ba 2+ -containing solution.
17. A method for forming a varistor, the method comprising:
forming a ceramic body comprising the ceramic material formed according to claim 15 ; and
applying electrode layers on the ceramic body, wherein the ceramic material is sintered at a temperature of between 1020° C. inclusive and 1060° C. inclusive to form the ceramic body.
18. The method according to claim 17 , wherein forming the ceramic body further comprises:
dry-pressing the granule of the ceramic material; and
debindering the ceramic material.
19. A varistor comprising:
a ceramic body containing a sintered ceramic material according to claim 1 .
20. The varistor according to claim 19 , wherein the varistor has a varistor gradient E 1mA of between 480 V/mm inclusive and 640 V/mm inclusive.