Multifunctional optoelectronic devices based on perovskites
View Patent ↗Embodiments of the present disclosure provide methods of growing halide films (e.g., single crystal halide perovskites or multi-crystal halide perovskites) on a structure, dual-mode photodetectors, methods of use, and the like.
1. A device, comprising:
a dual-band photodetector having a microcrystalline film deposited on a substrate,
wherein the microcrystalline film is positioned on a top side of the dual-band photodetector and the substrate is positioned on a bottom side of the dual-band photodetector,
wherein the microcrystalline film is a halide perovskite,
wherein the dual-band photodetector is configured to operate as a narrow-band photodetector upon illumination from the top side and the dual-band photodetector is configured to operate as a wide-band photodetector upon illumination from the bottom side.
2. The device of claim 1 , wherein
the halide perovskite is AMX 3 ,
A is an inorganic or organic monovalent cation,
M is a divalent cation selected from the group consisting of: Pb, Sn, Cu, Ni, Co, Fe, Mn, Pd, Cd, Ge, Cs, or Eu, and
X is selected from a halide.
3. The device of claim 1 , wherein
the halide perovskite is selected from the group consisting of: MAPbI 3 , MAPbBr 3 , MAPbBr 2 Cl, MAPbCl 3 , FAPbI 3 , FAPbBr 3 , FAPbCl 3 , CsPbI 3 , CsPbBr 3 , CsPbCl 3 , MASnI 3 , MASnBr 3 , MASnCl 3 , FASnI 3 , FASnBr 3 , FASnCl 3 , CsSnI 3 , CsSnBr 3 , and CsSnCl 3 ,
MA is methylammonium, and
FA is formamidinum.
4. The device of claim 1 , wherein the substrate is conductive substrate.
5. The device of claim 4 , wherein the conductive substrate is selected from indium tin oxide (ITO), fluorinated tin oxide (FTO), or gold.
6. The device of claim 2 , wherein the dual-band photodetector is configurable to be tunable by adjusting the perovskite composition AMX3, the halide (X) composition, the A composition, the M composition, or a combination thereof.
7. The device of claim 1 , wherein the microcrystalline film has a thickness of 10 to 500 microns and the substrate has a thickness of 1 nm to 1000 nm.
8. The device of claim 1 , wherein the top side of the dual-band photodetector is configured to detect light in the red, green, blue, and near-infrared portion of the infrared spectrum.
9. The device of claim 1 , wherein the bottom side of the dual-band photodetector is configured to detect light in the visible, UV-light, and X-ray, regions of the light spectrum.
10. A method of making a photodetector, comprising:
providing precursor materials for a microcrystalline film; and
depositing a microcrystalline film on a substrate to form a dual-band photodetector,
wherein the microcrystalline film is positioned on a top side of the dual-band photodetector and the substrate is positioned on a bottom side of the dual-band photodetector,
wherein the microcrystalline film is a halide perovskite,
wherein the dual-band photodetector is configured to operate as a narrow-band photodetector upon illumination from the top side and the dual-band photodetector is configured to operate as a wide-band photodetector upon illumination from the bottom side.
11. The method of claim 10 , wherein
the halide perovskite is AMX3,
A is an inorganic or organic monovalent cation,
M is a divalent cation selected from the group consisting of: Pb, Sn, Cu, Ni, Co, Fe, Mn, Pd, Cd, Ge, Cs, or Eu, and
X is selected from a halide.
12. The method of claim 10 , wherein
the halide perovskite is selected from the group consisting of: MAPbI 3 , MAPbBr 3 , MAPbBr 2 Cl, MAPbCl 3 , FAPbI 3 , FAPbBr 3 , FAPbCl 3 , CsPbI 3 , CsPbBr 3 , CsPbCl 3 , MASnI 3 , MASnBr 3 , MASnCl 3 , FASnI 3 , FASnBr 3 , FASnCl 3 , CsSnI 3 , CsSnBr 3 and CsSnCl 3 ,
MA is methylammonium, and
FA is formamidinum.
13. The method of claim 10 , wherein the substrate is conductive substrate.
14. The method of claim 10 , wherein the conductive substrate is selected from indium tin oxide (ITO), fluorinated tin oxide (FTO), or gold.