Power module with capacitor configured for improved thermal management

1. Module, comprising

a power semiconductor device,

a ceramic capacitor which is configured for cooling the power semiconductor device, and

at least one further capacitor also configured to cool the power semiconductor device,

wherein the ceramic capacitor and the power semiconductor device are connected together by a layer at least comprising silver as a constituent, and

wherein the coefficients of thermal expansion of the ceramic capacitor, of the power semiconductor device and of the silver-comprising layer differ from each other by no more than 10 −5 K −1 , and

wherein the module further comprises a control unit configured to control a function of the power semiconductor device, wherein the power semiconductor device includes an upper side on which the ceramic capacitor is arranged, and wherein the power semiconductor device includes a lower side that is opposite the upper side, the control unit being arranged directly on the lower side.

2. Module according to claim 1 ,

wherein the ceramic capacitor comprises a lead-lanthanum-zirconate-titanate ceramic.

3. Module according to claim 1 ,

wherein the layer, via which the ceramic capacitor and the power semiconductor device are connected together, includes at least 99 wt. % silver.

4. Module according to claim 1 ,

wherein the layer, via which the ceramic capacitor and the power semiconductor device are connected together, has been produced in a sintering process.

5. Module according to claim 1 ,

wherein the ceramic capacitor forms a support to which the power semiconductor device is secured.

6. Module according to claim 1 ,

wherein the ceramic capacitor comprises a ceramic material which has a dielectric constant of more than 2000 in an electrical field with a field strength between 5 kV/mm and 10 kV/mm and which is compatible with temperatures of at least 150° C.

7. Module according to claim 1 ,

wherein the ceramic capacitor comprises a ceramic material having a formulation

Pb (1-1,5a+e) A a B b (Zr 1-x Ti x ) 1-c C e Si c O 3 +y .PbO

wherein

A is selected from the group consisting of La, Nd, Y, Eu, Gd, Tb, Dy, Ho, Er and Yb;

C is selected from the group consisting of Ni and Cu; and

0<a<0.12

0.05≤x≤0.3

0≤c<0.12

0.001<e<0.12

0≤y<1.

8. Module according to claim 7 ,

wherein the ceramic capacitor is a ceramic multi-layer device and comprises inner electrodes.

9. Module according to claim 8 ,

wherein the inner electrodes have a thermal conductivity of more than 100 W/mK.

10. Module according to claim 8 ,

wherein the inner electrodes comprise copper.

11. Module according to claim 7 ,

comprising at least one further power semiconductor component, wherein the ceramic capacitor is configured for cooling the at least one further power semiconductor component.

12. Module according to claim 7 ,

wherein the module further comprises a control unit which is configured for controlling a function of the power semiconductor device.

13. Module according to claim 12 ,

wherein the power semiconductor device comprises an upper side on which the ceramic capacitor is arranged, and

wherein the power semiconductor device comprises a lower side which is opposite the upper side and on which the control unit is arranged.

14. Module according to claim 7 ,

wherein the power semiconductor device comprises a switch.

15. Module according to claim 7 ,

wherein the ceramic capacitor is interconnected with the power semiconductor device such that the ceramic capacitor acts as an intermediate circuit capacitor or as a damping capacitor.

16. Module, comprising

a power semiconductor device,

a ceramic capacitor which is configured for cooling the power semiconductor device, and

at least one further capacitor configured to cool the power semiconductor device,

wherein the ceramic capacitor comprises a lead-lanthanum-zirconate-titanate ceramic, and

wherein the ceramic capacitor and the power semiconductor device are connected together by a layer at least comprising silver as a constituent, wherein the coefficients of thermal expansion of the ceramic capacitor, of the power semiconductor and of the silver-comprising layer differ from each other by no more than 10 −5 K −1 , wherein the module further comprises a control unit configured to control a function of the power semiconductor device, wherein the power semiconductor device includes an upper side on which the ceramic capacitor is arranged, and wherein the power semiconductor device includes a lower side that is opposite the upper side, the control unit being arranged directly on the lower side.

17. Module according to claim 16 ,

wherein the ceramic capacitor and the power semiconductor device are connected together by a layer at least comprising silver as a constituent.

18. Module according to claim 17 ,

wherein the layer, via which the ceramic capacitor and the power semiconductor device are connected together, includes at least 99 wt. % silver.

19. Module according to claim 16 ,

wherein the ceramic capacitor forms a support to which the power semiconductor device is secured.

20. Module according to claim 16 ,

wherein the ceramic capacitor comprises a ceramic material having a formulation

Pb (1-1,5a+e) A a B b (Zr 1-x Ti x ) 1-c C e Si c O 3 +y .PbO

wherein

A is selected from the group consisting of La, Nd, Y, Eu, Gd, Tb, Dy, Ho, Er and Yb;

C is selected from the group consisting of Ni and Cu; and

0<a<0.12

0.05≤x≤0.3

0≤c<0.12

0.001<e<0.12

0≤y<1.

21. Module according to claim 16 ,

wherein the ceramic capacitor is a ceramic multi-layer device and comprises inner electrodes.

22. Module according to claim 16 ,

wherein the ceramic capacitor comprises inner electrodes, and wherein the inner electrodes have a thermal conductivity of more than 100 W/mK.

23. Module according to claim 16 ,

wherein the ceramic capacitor comprises inner electrodes, and wherein the inner electrodes comprise copper.

24. Module according to claim 17 ,

wherein the layer, via which the ceramic capacitor and the power semiconductor device are connected together, has been produced in a sintering process.

25. Module according to claim 16 ,

wherein the ceramic capacitor comprises a ceramic material which has a dielectric constant of more than 2000 in an electrical field with a field strength between 5 kV/mm and 10 kV/mm and which is compatible with temperatures of at least 150° C.

26. Module according to claim 16 ,

comprising at least one further power semiconductor component, wherein the ceramic capacitor is configured for cooling the at least one further power semiconductor component.

27. Module according to claim 16 ,

wherein the module further comprises a control unit which is configured for controlling a function of the power semiconductor device.

28. Module according to claim 16 ,

wherein the power semiconductor device comprises an upper side on which the ceramic capacitor is arranged, and

wherein the power semiconductor device comprises a lower side which is opposite the upper side and on which the control unit is arranged.

29. Module according to claim 16 ,

wherein the power semiconductor device comprises a switch.

30. Module according to claim 16 ,

wherein the ceramic capacitor is interconnected with the power semiconductor device such that the ceramic capacitor acts as an intermediate circuit capacitor or as a damping capacitor.

31. Module according to claim 16 ,

wherein the module is configured for being secured to a printed circuit board.

32. Module according to claim 16 ,

wherein the ceramic capacitor and the power semiconductor device are arranged in a common housing.

33. Module according to claim 16 ,

wherein the power semiconductor device comprises a substrate in which semiconductor elements are embedded.

34. Module according to claim 16 ,

wherein the capacitor comprises two outer electrodes.

35. Module according to claim 16 ,

wherein the outer electrodes comprise copper or consist of copper.

36. Module according to claim 7 ,

wherein the module is configured for being secured to a printed circuit board.

37. Module according to claim 7 ,

wherein the ceramic capacitor and the power semiconductor device are arranged in a common housing.

38. Module according to claim 7 ,

wherein the power semiconductor device comprises a substrate in which semiconductor elements are embedded.

39. Module according to claim 7 ,

wherein the capacitor comprises two outer electrodes.

40. Module according to claim 7 ,

wherein the outer electrodes comprise copper or consist of copper.

41. Module according to claim 7 ,

wherein the ceramic capacitor is a multi-layer device in which layers of a ceramic material and inner electrodes are stacked one above the other in an alternating manner in a stacking direction,

wherein the power semiconductor device comprises an upper side on which the ceramic capacitor is arranged,

wherein the inner electrodes are perpendicular to the upper side of the power semiconductor device.

42. Module according to claim 16 ,

wherein the ceramic capacitor is a multi-layer device in which layers of a ceramic material and inner electrodes are stacked one above the other in an alternating manner in a stacking direction,

wherein the power semiconductor device comprises an upper side on which the ceramic capacitor is arranged,

wherein the inner electrodes are perpendicular to the upper side of the power semiconductor device.

43. Module, comprising: a power semiconductor device, and a ceramic capacitor configured for cooling the power semiconductor device,

wherein the ceramic capacitor and the power semiconductor device are connected together by a layer at least comprising silver as a constituent,

wherein the module further comprises a control unit configured to control a function of the power semiconductor device,

wherein the power semiconductor device includes an upper side on which the ceramic capacitor is arranged, and

wherein the power semiconductor device includes a lower side which is opposite the upper side, the control unit being arranged directly on the lower side.