Optoelectronic semiconductor chip

1. An optoelectronic semiconductor chip comprising:

a semiconductor body comprising an n-conducting region, a p-conducting region and an active region between the n-conducting region and the p-conducting region;

a first mirror containing a first metallic layer, and

a p-metallization containing a second metallic layer, wherein

during operation of the semiconductor chip, the first mirror is not at the same electrical potential as the p-conducting region,

during operation of the semiconductor chip, the p-metallization is at the same electrical potential as the p-conducting region and the first metallic layer is at the same potential as the n-conducting region, and

the first mirror has at least one opening through which the p-metallization is electrically conductively connected to the p-conducting region.

2. The optoelectronic semiconductor chip according to claim 1 , wherein the first metallic layer contains or consists of one of: Ag (silver), Al (aluminum), Rh (rhodium) and Au (gold).

3. The optoelectronic semiconductor chip according to claim 1 , wherein the surface portion of the first mirror facing the active region is greater than the surface fraction of the p-metallization facing the active region.

4. The optoelectronic semiconductor chip according to claim 1 , wherein the first mirror has a reflectivity greater than a reflectivity of the p-metallization.

5. The optoelectronic semiconductor chip according to claim 1 , wherein the main extension plane of the first mirror is arranged between the semiconductor body and the p-metallization.

6. The optoelectronic semiconductor chip according to claim 1 , wherein the first mirror has an opening and the p-metallization is at least partially disposed in the opening of the first mirror.

7. The optoelectronic semiconductor chip according to claim 1 , wherein the first metallic layer is covered with a first dielectric at sides facing the active region.

8. The optoelectronic semiconductor chip according claim 1 , wherein the first mirror projects beyond the semiconductor body in lateral directions.

9. The optoelectronic semiconductor chip according to claim 1 , wherein the p-metallization is at least partially formed of the same material as the first mirror.

10. The optoelectronic semiconductor chip according to claim 1 , wherein the first mirror and the n-conducting region are electrically conductively connected to one another by a third via and the via completely penetrates the semiconductor body, perpendicular or transverse to the main extension plane of the semiconductor body.

11. The optoelectronic semiconductor chip according to claim 1 , wherein the p-metallization has a fourth via through which a first contact structure extends, and

the first contact structure is electrically conductively connected to the first mirror.

12. The optoelectronic semiconductor chip according to claim 1 , wherein the active region is completely surrounded by the first mirror in lateral directions.

13. The optoelectronic semiconductor chip according to claim 1 , wherein the first metallic layer is covered on all sides with electrically insulating material.

14. The optoelectronic semiconductor chip according to claim 1 , wherein the second metallic layer is free of silver.

15. An optoelectronic semiconductor chip comprising:

a semiconductor body comprising an n-conducting region, a p-conducting region and an active region between the n-conducting region and the p-conducting region;

a first mirror containing a first metallic layer, and

a p-metallization containing a second metallic layer, wherein

during operation of the semiconductor chip, the first mirror is not at the same electrical potential as the p-conducting region,

during operation of the semiconductor chip, the p-metallization is at the same electrical potential as the p-conducting region,

the first mirror has at least one opening through which the p-metallization is electrically conductively connected to the p-conducting region,

the p-metallization is at least partially formed of the same material as the first mirror, and

the active region is completely surrounded by the first mirror in lateral directions.

16. The optoelectronic semiconductor chip according to claim 15 , wherein the first metallic layer is at the same potential as the n-conducting region.

17. The optoelectronic semiconductor chip according to claim 15 , wherein the p-metallization has a fourth via through which a first contact structure extends, and the first contact structure is electrically conductively connected to the first mirror.

18. An optoelectronic semiconductor chip comprising:

a semiconductor body comprising an n-conducting region,

a p-conducting region and an active region between the n-conducting region and the p-conducting region;

a first mirror containing a first metallic layer, and

a p-metallization containing a second metallic layer,

wherein

during operation of the semiconductor chip, the first mirror is not at the same electrical potential as the p-conducting region, and

the p-metallization is at the same electrical potential as the p-conducting region,

the first mirror has at least one opening through which the p-metallization is electrically conductively connected to the p-conducting region, and

the first mirror and the n-conducting region are electrically conductively connected to one another by a third via and the via completely penetrates the semiconductor body perpendicular or transverse to the main extension plane of the semiconductor body.

19. The optoelectronic semiconductor chip according to claim 18 , wherein the first metallic layer is at the same potential as the n-conducting region.

20. The optoelectronic semiconductor chip according to claim 18 , wherein the first metallic layer is covered on all sides with electrically insulating material.