Edge-emitting semiconductor laser
View Patent ↗In an embodiment a laser include a semiconductor layer sequence having an active zone for generating radiation and an electrical contact web arranged on a top side of the semiconductor layer sequence, wherein the contact web is located on the top side only in an electrical contact region or is in electrical contact with the top side only in the contact region so that the active zone is supplied with current only in places during operation, wherein the contact web comprises a plurality of metal layers at least partially stacked one above the other, wherein at least one of the metal layers comprises a structuring so that the at least one metal layer only partially covers the contact region and has at least one opening or interruption, and wherein the structuring reduces stresses of the semiconductor layer sequence on account of different thermal expansion coefficients of the metal layers.
1. An edge-emitting semiconductor laser comprising:
a semiconductor layer sequence having an active zone for generating radiation; and
an electrical contact web arranged on a top side of the semiconductor layer sequence,
wherein the contact web is located on the top side only in an electrical contact region or is in electrical contact with the top side only in the contact region so that the active zone is supplied with current only in places during operation,
wherein the contact web comprises a plurality of metal layers at least partially stacked one above the other,
wherein at least one of the metal layers comprises a structuring so that the at least one metal layer only partially covers the contact region and has at least one opening or interruption,
wherein the structuring reduces stresses of the semiconductor layer sequence on account of different thermal expansion coefficients of the metal layers, and
wherein a metal layer of the contact web which is furthest away from the semiconductor layer sequence is a continuous, unstructured layer completely covering the contact region.
2. The semiconductor laser according to claim 1 ,
wherein the semiconductor layer sequence comprises a ridge waveguide configured to guide a wave of a laser radiation generated in a region of the active zone during operation,
wherein the semiconductor layer sequence is based on AlInGaN,
wherein the at least one metal layer comprising the structuring extends along at least 70% of a longitudinal extent and a transverse extent of the contact region, and
wherein the at least one metal layer comprising the structuring covers the contact region to at least 40% and to at most 95%.
3. The semiconductor laser according to claim 1 , wherein the at least one metal layer comprising the structuring is configured for lateral current restriction so that current is impressed only through this metal layer into the semiconductor layer sequence.
4. The semiconductor laser according to claim 1 , wherein current is impressed into the semiconductor layer sequence through the at least one opening or interruption by the at least one metal layer comprising the structuring and being closest to the semiconductor layer sequence.
5. The semiconductor laser according to claim 1 , wherein the at least one metal layer comprising the structuring is in direct contact with the semiconductor layer sequence.
6. The semiconductor laser according to claim 5 ,
wherein two of the metal layers comprise structurings, and
wherein the structurings of the two metal layers have main directions running transversely with respect to one another.
7. The semiconductor laser according to claim 1 , wherein the at least one metal layer comprising the structuring is spaced apart from the semiconductor layer sequence.
8. The semiconductor laser according to claim 7 ,
wherein two of the metal layers comprise structurings, and
wherein the structurings of the two metal layers have main directions running transversely with respect to one another.
9. The semiconductor laser according to claim 1 ,
wherein at least two of the metal layers comprise structurings,
wherein the metal layers follow one another directly in a direction away from the top side, and
wherein a degree of coverage of the contact region through the metal layers decreases in the direction away from the top side.
10. The semiconductor laser according to claim 1 ,
wherein the at least one metal layer comprising the structuring is a metal layer having a smallest coefficient of thermal expansion,
wherein the at least one metal layer comprising the structuring has a thickness of at most 15% of a total thickness of the contact web, and
wherein the thickness of the at least one metal layer is at least 40 nm and at most 400 nm.
11. The semiconductor laser according to claim 1 ,
wherein the at least one metal layer comprising the structuring is at least partially divided in metal strips which extend along the contact region,
wherein, for a number N of the metal strips and for a width B of the contact region, the following applies: specified in inverse micrometers: 0.2≤N/B≤1.5, and 0.1 μm≤B≤5 μm, and
wherein a distance between adjacent metal strips is between 0.1 μm and 5 μm inclusive.
12. The semiconductor laser according to claim 1 , wherein the at least one metal layer comprising the structuring is at least partially divided into round, rectangular, H-shaped, T-shaped, V-shaped or cross-shaped structural elements and forms a hexagonal, triangular or rectangular arrangement pattern.
13. The semiconductor laser according to claim 1 ,
wherein an electrical contact layer of the semiconductor layer sequence which forms the top side is further provided with the structuring, and
wherein the contact web has between 2 and 7 the metal layers inclusive.
14. The semiconductor laser according to claim 1 , wherein a first one of the metal layers which is located directly on the top side is a continuous, unstructured layer completely covering the top side in the contact region so that the at least one metal layer comprising the structuring is located between the metal layer located directly at the top side and the metal layer which is furthest away from the semiconductor layer sequence.
15. The semiconductor laser according to claim 1 ,
wherein the at least one opening or interruption in the at least one metal layer comprising the structuring is completely filled by a metal, a semiconductor material or a dielectric, and
wherein a side facing away from the semiconductor layer sequence of a metal layer directly following the at least one metal layer comprising the structuring or following the one of the metal layers comprising the structuring which is furthest away from the semiconductor layer sequence is of planar fashion.
16. The semiconductor laser according to claim 1 , wherein a first one of the metal layers located directly on the top side is a continuous, unstructured layer completely covering the top side in the contact region.
17. An edge-emitting semiconductor laser comprising:
a semiconductor layer sequence having an active zone for generating radiation; and
an electrical contact web arranged on a top side of the semiconductor layer sequence,
wherein the contact web is located on the top side only in an electrical contact region or is in electrical contact with the top side only in the contact region so that the active zone is supplied with current only in places during operation,
wherein the contact web comprises a plurality of metal layers at least partially stacked one above the other,
wherein at least one of the metal layers comprises a structuring so that the at least one metal layer only partially covers the contact region and has at least one opening or interruption,
wherein the structuring reduces stresses of the semiconductor layer sequence on account of different thermal expansion coefficients of the metal layers,
wherein the at least one metal layer comprising the structuring is a metal layer having a smallest coefficient of thermal expansion,
wherein the at least one metal layer comprising the structuring has a thickness of at most 15% of a total thickness of the contact web, and
wherein the thickness of the at least one metal layer is at least 40 nm and at most 400 nm.
18. The semiconductor laser according to claim 17 ,
wherein the semiconductor layer sequence comprises a ridge waveguide configured to guide a wave of a laser radiation generated in a region of the active zone during operation,
wherein the semiconductor layer sequence is based on AlInGaN,
wherein the at least one metal layer comprising the structuring extends along at least 70% of a longitudinal extent and a transverse extent of the contact region, and
wherein the at least one metal layer comprising the structuring covers the contact region to at least 40% and to at most 95%.
19. An edge-emitting semiconductor laser comprising:
a semiconductor layer sequence having an active zone for generating radiation; and
an electrical contact web arranged on a top side of the semiconductor layer sequence,
wherein the contact web is located on the top side only in an electrical contact region or is in electrical contact with the top side only in the contact region so that the active zone is supplied with current only in places during operation,
wherein the contact web comprises a plurality of metal layers at least partially stacked one above the other,
wherein at least one of the metal layers comprises a structuring so that the at least one metal layer only partially covers the contact region and has at least one opening or interruption,
wherein the structuring reduces stresses of the semiconductor layer sequence on account of different thermal expansion coefficients of the metal layers,
wherein the at least one metal layer comprising the structuring is at least partially divided in metal strips which extend along the contact region,
wherein, for a number N of the metal strips and for a width B of the contact region, the following applies: specified in inverse micrometers: 0.2≤N/B≤1.5, and 0.1 μm≤B≤5 μm, and
wherein a distance between adjacent metal strips is between 0.1 μm and 5 μm inclusive.
20. The semiconductor laser according to claim 19 ,
wherein the semiconductor layer sequence comprises a ridge waveguide configured to guide a wave of a laser radiation generated in a region of the active zone during operation,
wherein the semiconductor layer sequence is based on AlInGaN,
wherein the at least one metal layer comprising the structuring extends along at least 70% of a longitudinal extent and a transverse extent of the contact region, and
wherein the at least one metal layer comprising the structuring covers the contact region to at least 40% and to at most 95%.