Method for producing an optoelectronic component, and optoelectronic component

1. A method for producing an optoelectronic component, the method comprising:

providing a semiconductor capable of emitting primary radiation;

providing an alkoxy-functionalized polyorganosiloxane resin; and

crosslinking the alkoxy-functionalized polyorganosiloxane resin to form a three-dimensionally crosslinked polyorganosiloxane,

wherein an organic portion of the three-dimensionally crosslinked polyorganosiloxane is up to 25 wt %.

2. The method according to claim 1 , wherein crosslinking comprises condensation crosslinking.

3. The method according to claim 1 , wherein the organic portion of the three-dimensionally crosslinked polyorganosiloxane is between 13 wt % and 18 wt % inclusive.

4. The method according to claim 1 , wherein the crosslinked polyorganosiloxane has a Shore A hardness greater than 70.

5. The method according to claim 1 , wherein the alkoxy-functionalized polyorganosiloxane resin is an alkoxy-functionalized methylphenyl silicone resin having an alkoxy content of 17+/−4 wt %.

6. The method according to claim 1 , wherein the alkoxy-functionalized polyorganosiloxane resin is an alkoxy-functionalized methyl silicone resin having an alkoxy content of 35+/−4 wt %.

7. The method according to claim 1 , wherein the crosslinked polyorganosiloxane is arranged in a beam path of the semiconductor.

8. The method according to claim 1 , further comprising applying the alkoxy-functionalized polyorganosiloxane resin as a converter element on a radiation main surface of the semiconductor, wherein the converter element comprises at least one phosphor which converts the primary radiation into a secondary radiation.

9. The method according to claim 8 , wherein the phosphor is an aluminum garnet, alkaline earth nitride or a combination thereof, and wherein the phosphor comprises a content of at least 50 wt % in the crosslinked polyorganosiloxane.

10. The method according to claim 1 , further comprising arranging the crosslinked polyorganosiloxane as a volume casting at least in regions within a recess of a housing of the optoelectronic component, the semiconductor being positively surrounded by the crosslinked polyorganosiloxane and having a cross-sectional thickness of at least 250 μm, wherein a phosphor is an aluminum garnet, alkaline earth nitride or a combination thereof, and wherein the phosphor comprises a content of at most 25 wt % in the crosslinked polyorganosiloxane.

11. The method according to claim 1 , wherein the crosslinked polyorganosiloxane is formed as a housing or lens.

12. The method according to claim 1 , wherein providing the alkoxy-functionalized polyorganosiloxane resin comprises casting, drop casting, spin coating, doctor blading, spray coating or compression molding.

13. The method according to claim 1 , wherein crosslinking the alkoxy-functionalized polyorganosiloxane resin comprises applying temperature and/or humidity or UV radiation.

14. The method according to claim 1 , wherein the alkoxy-functionalized polyorganosiloxane resin is produced by hydrolysis of a precursor.

15. An optoelectronic device formed by the method according to claim 1 .

16. The method according claim 1 , wherein the three-dimensionally crosslinked polyorganosiloxane is a close meshed three-dimensionally crosslinked polyorganosiloxane.

17. The method according to claim 16 , wherein the three-dimensionally crosslinked polyorganosiloxane forms a close-meshed three-dimensional Si—O network.

18. The method according to claim 1 , wherein the crosslinked polyorganosiloxane has the following structural formula:

wherein R is a methyl-radical and/or a phenyl-radical.

19. A method for producing an optoelectronic component, the method comprising:

providing a semiconductor capable of emitting primary radiation;

providing an alkoxy-functionalized polyorganosiloxane resin; and

crosslinking the alkoxy-functionalized polyorganosiloxane resin to form a three-dimensionally crosslinked polyorganosiloxane,

wherein an organic portion of the three-dimensionally crosslinked polyorganosiloxane is up to 25 wt %, and

wherein the three-dimensionally crosslinked polyorganosiloxane forms a close meshed three-dimensional Si—O network.