Copper paste for joining, method for manufacturing joined body, and method for manufacturing semiconductor device
Provided is a copper paste for joining including copper particles, second particles including a metal element other than copper, and a dispersion medium, in which the copper particles include submicro copper particles having a volume-average particle diameter of 0.12 μm or more and 0.8 μm or less and micro copper particles having a volume-average particle diameter of 2 μm or more and 50 μm or less, a sum of a content of the submicro copper particles and a content of the micro copper particles is 80% by mass or more of a sum of masses of the copper particles and the second particles, the content of the submicro copper particles is 30% by mass or more and 90% by mass or less of a sum of a mass of the submicro copper particles and a mass of the micro copper particles, and a content of the second particles is 0.01% by mass or more and 10% by mass or less of the sum of the masses of the copper particles and the second particles.
1. A copper paste for joining comprising:
copper particles;
second particles including a metal element other than copper; and
a dispersion medium,
wherein the copper particles include submicro copper particles having a volume-average particle diameter of 0.12 μm or more and 0.8 μm or less and micro copper particles having a volume-average particle diameter of 2 μm or more and 50 μm or less,
a sum of a content of the submicro copper particles and a content of the micro copper particles is 80% by mass or more of a sum of masses of the copper particles and the second particles,
the content of the submicro copper particles is 30% by mass or more and 90% by mass or less of a sum of a mass of the submicro copper particles and a mass of the micro copper particles, and
a content of the second particles is 0.01% by mass or more and 10% by mass or less of the sum of the masses of the copper particles and the second particles.
2. The copper paste for joining according to claim 1 ,
wherein the second particles are metal particles.
3. The copper paste for joining according to claim 2 ,
wherein the metal particles include at least one kind of metal selected from the group consisting of zinc, silver, gold, platinum, tin, indium, vanadium, aluminum, nickel, antimony, and palladium.
4. The copper paste for joining according to claim 2 ,
wherein the metal particles include at least one kind of metal selected from the group consisting of zinc, silver, tin, indium, and vanadium.
5. The copper paste for joining according to claim 2 ,
wherein the metal particles are zinc particles.
6. The copper paste for joining according to claim 5 ,
wherein an aspect ratio of the zinc particle is 4 or more.
7. The copper paste for joining according to claim 2 , comprising:
two or more kinds of the metal particles.
8. The copper paste for joining according to claim 1 ,
wherein the second particles are fatty acid metal salt particles.
9. The copper paste for joining according to claim 8 ,
wherein the fatty acid metal salt particles include a fatty acid metal salt of a fatty acid having 8 to 18 carbon atoms and silver, nickel, or zinc.
10. The copper paste for joining according to claim 8 ,
wherein the fatty acid metal salt particles may include at least one kind of fatty acid metal salt selected from the group consisting of zinc stearate, silver stearate, zinc laurate, nickel laurate, and zinc octylate.
11. The copper paste for joining according to claim 1 ,
wherein a volume-average particle diameter of the second particles is 150 μm or less.
12. The copper paste for joining according to claim 1 ,
wherein the copper paste for joining is for non-pressurization joining.
13. A method for manufacturing a semiconductor device, comprising:
a step of preparing a laminate in which a first member, the copper paste for joining according to claim 1 , and a second member are laminated in this order in a direction in which a weight of the first member applies and sintering the copper paste for joining in a state in which the copper paste for joining receives the weight of the first member or the weight of the first member and a pressure of 0.01 MPa or less,
wherein at least one of the first member and the second member is a semiconductor element.
14. The method for manufacturing a semiconductor device according to claim 13 ,
wherein a sintering temperature in the sintering step is 300° C. or lower.
15. A joined body comprising:
a first member;
a second member; and
a sintered body of the copper paste for joining according to claim 1 which joins the first member and the second member.
16. The joined body according to claim 15 ,
wherein at least one of the first member and the second member includes at least one kind of metal selected from the group consisting of silver, gold, platinum, and palladium on a surface in contact with the sintered body.
17. A semiconductor device comprising:
a first member;
a second member; and
a sintered body of the copper paste for joining according to claim 1 which joins the first member and the second member,
wherein at least one of the first member and the second member is a semiconductor element.