Method for producing an optoelectronic component and optoelectronic component
An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method includes providing at least one light-emitting semiconductor chip comprising a sapphire substrate and an epitaxially grown layer sequence, arranging the light-emitting semiconductor chip with a side facing away from the sapphire substrate on a carrier, detaching the sapphire substrate from the semiconductor chip, applying a converter element on a region of the semiconductor chip in which the sapphire substrate was detached, arranging the semiconductor chip on an auxiliary carrier so that the converter element faces the auxiliary carrier and detaching the carrier from the semiconductor chip.
1. A method for producing an optoelectronic component comprising the method comprising:
providing at least one light-emitting semiconductor chip comprising a sapphire substrate and an epitaxially grown layer sequence;
arranging the light-emitting semiconductor chip with a side facing away from the sapphire substrate on a carrier;
detaching the sapphire substrate from the light-emitting semiconductor chip;
applying a converter element on a region of the light-emitting semiconductor chip in which the sapphire substrate was detached;
arranging the light-emitting semiconductor chip on an auxiliary carrier so that the converter element faces the auxiliary carrier; and
detaching the carrier from the light-emitting semiconductor chip.
2. The method for producing the optoelectronic component according to claim 1 , wherein the method takes place in the recited order.
3. The method for producing the optoelectronic component according to claim 1 , wherein at least one light-emitting semiconductor chip comprises a wafer composite having a plurality of light-emitting semiconductor chips.
4. The method for producing the optoelectronic component according to claim 3 , further comprising, after detaching the carrier, separating the wafer composite with the converter element and the auxiliary carrier into a plurality of optoelectronic components.
5. The method for producing the optoelectronic component according to claim 4 , wherein separating comprises singulating by laser scribing, stealth dicing, plasma dicing or mechanical sawing.
6. The method for producing the optoelectronic component according to claim 3 , wherein applying the converter element comprises applying the converter element to all light-emitting semiconductor chips.
7. The method for producing the optoelectronic component according to claim 1 , wherein the converter element is monocrystalline.
8. The method for producing the optoelectronic component according to claim 7 , wherein the converter element is anodically bonded to the epitaxially grown layer sequence.
9. The method for producing the optoelectronic component according to claim 1 , wherein the converter element is coated with an adhesive layer, and wherein the converter element is glued onto the light-emitting semiconductor chip(s) with the adhesive layer.
10. The method for producing the optoelectronic component according to claim 9 , wherein the adhesive layer is transparent and comprises Si.
11. The method for producing the optoelectronic component according to claim 9 , wherein the adhesive layer is applied to the converter element by spin coating.
12. The method for producing the optoelectronic component according to claim 1 , wherein the converter element comprises a converter material introduced into glass.
13. The method for producing the optoelectronic component according to claim 12 , wherein the converter element comprises a ceramic plate or is a ceramic plate.
14. An optoelectronic component comprising:
a light-emitting semiconductor chip comprising an epitaxially grown layer sequence having a p-doped semiconductor region, an n-doped semiconductor region and an active zone, the n-doped semiconductor region facing an emission side of the light-emitting semiconductor chip;
a p-contact point and an n-contact point, both arranged on the same side of the light-emitting semiconductor chip and remote from the emission side of the light-emitting semiconductor chip;
a mirror layer arranged on the p-doped semiconductor region facing away from the n-doped semiconductor region; and
a converter element arranged on the n-doped semiconductor region and facing away from the p-doped semiconductor region,
wherein the converter element is anodically bonded to the epitaxially grown layer sequence.
15. The optoelectronic component according to claim 14 , wherein the optoelectronic component comprises an outer encapsulation encapsulating the light-emitting semiconductor chip on side faces and on a side remote from the emission side, and wherein the p-contact point and the n-contact point contact through the outer encapsulation.
16. The optoelectronic component according to claim 14 , wherein the converter element is monocrystalline.
17. A method for producing an optoelectronic component, the method comprising:
providing at least one light-emitting semiconductor chip comprising a sapphire substrate and an epitaxially grown layer sequence;
arranging the light-emitting semiconductor chip with a side facing away from the sapphire substrate on a carrier;
detaching the sapphire substrate from the light-emitting semiconductor chip;
applying a converter element on a region of the light-emitting semiconductor chip in which the sapphire substrate was detached, wherein the converter element is anodically bonded to the epitaxially grown layer sequence;
arranging the light-emitting semiconductor chip on an auxiliary carrier so that the converter element faces the auxiliary carrier; and
detaching the carrier from the light-emitting semiconductor chip.