IP Library › Granted Patent US 11,003,078
Granted Patent B2
US 11,003,078 · App. 16/098,379 · Granted May 11, 2021

Compositions for forming a protective film against basic aqueous hydrogen peroxide solution, and pattern formation method

Inventors: Tomoya Ohashi (Toyama, JP); Hiroto Ogata (Toyama, JP); Yuto Hashimoto (Toyama, JP); Yuki Usui (Toyama, JP); Yasushi Sakaida (Toyama, JP); Takahiro Kishioka (Toyama, JP)
Assignee: NISSAN CHEMICAL CORPORATION
G03F7/11C08G18/4063C08G18/48C08G18/62C09D175/04G03F7/094G03F7/162G03F7/168G03F7/20G03F7/322H01L21/0274H01L21/308H01L21/3081H01L21/30604H01L21/32134H01L21/32139
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Quick Facts
Patent No.
US 11,003,078
App. No.
16/098,379
Granted
May 11, 2021
Kind
B2
Abstract

A composition for forming a protective film against basic aqueous hydrogen peroxide solution, including a crosslinker having, in one molecule, two or more groups at least one selected from the group consisting of a glycidyl group, a terminal epoxy group, an epoxycyclopentyl group, an epoxycyclohexyl group, an oxetanyl group, a vinyl ether group, an isocyanate group, and a blocked isocyanate, a compound having a group of Formula (1): (wherein X 1 is a substituent reacting with the crosslinker, R 0 is a direct bond or a C 1-2 alkylene group, X 2 is a C 1-2 alkyl group, C 1-2 alkoxy group, or fluoro group, a is an integer of 0-2, b is an integer of 1-3, c is an integer of 0-4, and b and c satisfy a relational expression of 1≤(b+c)≤5) on a side chain or a terminal and having a weight average molecular weight of 800 or more, and an organic solvent.

Claims (51)

1. A composition for forming a protective film against basic aqueous hydrogen peroxide solution, comprising

a crosslinker having, in one molecule, two or more groups that are at least one selected from the group consisting of

a glycidyl group,

a terminal epoxy group,

an epoxycyclopentyl group,

an epoxycyclohexyl group,

an oxetanyl group,

a vinyl ether group,

an isocyanate group, and

a blocked isocyanate;

a compound having a group of the following Formula (1):

where

X 1 is a substituent reacting with the crosslinker,

R 0 is a direct bond or a C 1-2 alkylene group,

X 2 is a C 1-2 alkyl group, a C 1-2 alkoxy group, or fluoro group,

a is an integer of 0 to 2,

b is an integer of 1 to 3, when b is 2 or 3, groups of -R 0 -X 1 are optionally different from each other,

c is an integer of 0 to 4, when c is 2, 3, or 4, the groups of X 2 are optionally different from each other, and

b and c satisfy a relational expression of 1≤(b+c)≤5, wherein the group of Formula (1) is on a side chain or a terminal of the compound, and the compound has a weight average molecular weight of 800 or more; and

an organic solvent.

2. A composition for forming a protective film against basic aqueous hydrogen peroxide solution, comprising

a crosslinker having, in one molecule, two or more groups that are at least one selected from the group consisting of

a glycidyl group,

a terminal epoxy group,

an epoxycyclopentyl group,

an epoxycyclohexyl group,

an oxetanyl group,

a vinyl ether group,

an isocyanate group, and

a blocked isocyanate group;

a compound having a group of the following Formula (2):

where

R 1 is a direct bond or a linear or branched alkylene group having a carbon atom number of 1 to 8, and

X 1 is a substituent reacting with the crosslinker, wherein the group of Formula (2) is on a side chain or a terminal of the compound, and the compound has a weight average molecular weight of 800 or more; and

an organic solvent.

3. The composition for forming a protective film against basic aqueous hydrogen peroxide solution according to claim 1 , wherein the substituent X 1 reacting with the crosslinker is a group of the following Formula (3), (4), (5), (6), (7), (8), (9), (10), or (11):

where

R 2 is a linear, branched, or cyclic alkyl group having a carbon atom number of 1 to 8,

R 3 is a hydrogen atom or a linear, branched, or cyclic hydrocarbon group having a carbon atom number of 1 to 8, and

e is 0 or 1.

4. The composition for forming a protective film against basic aqueous hydrogen peroxide solution according to claim 3 , wherein the substituent X 1 reacting with the crosslinker is the group of Formula (3), (5), or (6).

5. The composition for forming a protective film against basic aqueous hydrogen peroxide solution according to claim 1 , wherein the amount of the crosslinker to be added is an amount capable of sealing the substituent X 1 in an amount of 20% by mole to 150% by mole when the total amount of the substituent X 1 reacting with the crosslinker in the compound having a weight average molecular weight of 800 or more is made 100% by mole.

6. The composition for forming a protective film against basic aqueous hydrogen peroxide solution according to claim 1 , wherein the crosslinker has two or more glycidyl groups, terminal epoxy groups, or epoxycyclohexyl groups in one molecule.

7. The composition for forming a protective film against basic aqueous hydrogen peroxide solution according to claim 1 , wherein the blocked isocyanate group is a group of the following Formula (11) or (12):

where

R 4 and R 5 are each independently a C 1-5 alkyl group,

R 6 is a C 1-5 alkyl group, d is an integer of 1 to 3, and

when d is 2 or 3, C 1-5 alkyl groups of R 6 are optionally different from each other.

8. The composition for forming a protective film against basic aqueous hydrogen peroxide solution according to claim 1 , further comprising a crosslinking catalyst.

9. The composition for forming a protective film against basic aqueous hydrogen peroxide solution according to claim 1 , further comprising a surfactant.

10. A method for forming a pattern comprising: forming a protective film on a semiconductor substrate optionally having an inorganic film on a surface thereof using the composition for forming a protective film against basic aqueous hydrogen peroxide solution according to claim 1 ; forming a resist pattern on the protective film; dry etching the protective film using the resist pattern as a mask to expose the surface of the inorganic film or the semiconductor substrate; and wet etching the inorganic film or the semiconductor substrate with a basic aqueous hydrogen peroxide solution using the dry-etched protective film as a mask, followed by washing.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 1, 2018
From: OHASHI, TOMOYA; OGATA, HIROTO; HASHIMOTO, YUTO; USUI, YUKI; SAKAIDA, YASUSHI; KISHIOKA, TAKAHIRO
To: NISSAN CHEMICAL CORPORATION
Reel/Frame 047387/0540 →
Priority Claims (2)
JP JP2016-092727 · May 2, 2016 · national
JP JP2016-205489 · Oct 19, 2016 · national
Continuity (1)
Related Publication 20190163064A1 · May 30, 2019
Cited By (1)
US 12,482,656