Method and composition for improving LWR in patterning step using negative tone photoresist
The present invention relates to a method of reducing the LWR (Line Width Roughness) of a photoresist pattern using a negative tone photoresist during the fabrication of a semiconductor, and more specifically to a composition capable of reducing LWR in order to ensure a higher pattern CDU after a negative tone development process, and a processing method using the composition, thus reducing the LWR, thereby providing better CDU than existing methods.
1. A composition for reducing an LWR (Line Width Roughness) of a negative tone photoresist pattern on a wafer, the composition comprising:
90 wt % of ethylene glycol as a swelling material for swelling the negative tone photoresist pattern on the wafer;
0.1 wt % of triethylamine as an alkaline material for developing an unexposed pattern surface;
8.89 to 9.89 wt % of 2-heptanol as a solvent enabling material dissolution and mixing; and
0.01 to 1 wt % of polyoxyethylene nonylphenylether as a nonionic surfactant.
2. A method of reducing an LWR (Line Width Roughness) of a negative tone photoresist pattern formed on a wafer by a development process using a negative tone photoresist, the method comprising:
1) dispensing a composition for reducing the LWR on the negative tone photoresist pattern on the wafer;
2) puddling for a predetermined period of time; and
3) spin drying,
wherein the composition for reducing the LWR comprises:
90 wt % of ethylene glycol as a swelling material for swelling the negative tone photoresist pattern on the wafer;
0.1 wt % of triethylamine as an alkaline material for developing an unexposed pattern surface;
8.89 to 9.89 wt % of 2-heptanol as a solvent enabling material dissolution and mixing; and
0.01 to 1 wt % of polyoxyethylene nonylphenylether as a nonionic surfactant.
3. The method of claim 2 , wherein the composition is dispensed at a speed of 5 to 50 mL/s and is puddled for 10 to 20 seconds.