Method for manufacturing semiconductor device
There is disclosed a method for manufacturing a semiconductor device comprising a semiconductor chip having a connection portion and a wiring circuit board having a connection portion, the respective connection portions being electrically connected to each other, or a semiconductor device comprising a plurality of semiconductor chips having connection portions, the respective connection portions being electrically connected to each other. The connection portions consist of metal. The above described method comprises: (a) a first step of press-bonding the semiconductor chip and the wiring circuit board or the semiconductor chips to each other so that the respective connection portions are in contact with each other with a semiconductor adhesive interposed therebetween, at a temperature lower than a melting point of the metal of the connection portion, to obtain a temporarily connected body; (b) a second step of sealing at least a part of the temporarily connected body with a sealing resin to obtain a sealed temporarily connected body; and (c) a third step of heating the sealed temporarily connected body at a temperature equal to or higher than the melting point of the metal of the connection portion, to obtain a sealed connected body.
1. A method for manufacturing a semiconductor device comprising a semiconductor chip having a connection portion and a wiring circuit board having a connection portion, the respective connection portions being electrically connected to each other, or a semiconductor device comprising a plurality of semiconductor chips having connection portions, the respective connection portions being electrically connected to each other,
wherein the connection portions consist of metal,
the method comprising:
(a) a first step of press-bonding the semiconductor chip and the wiring circuit board or the semiconductor chips to each other so that the respective connection portions are in contact with each other with a semiconductor adhesive interposed therebetween, at a temperature lower than a melting point of the metal of the connection portion, to obtain a temporarily connected body;
(b) a second step of sealing at least a part of the temporarily connected body with a sealing resin to obtain a sealed temporarily connected body; and
(c) a third step of heating the sealed temporarily connected body at a temperature equal to or higher than the melting point of the metal of the connection portion, to obtain a sealed connected body.
2. A method for manufacturing a semiconductor device comprising a semiconductor chip having a connection portion and a wiring circuit board having a connection portion, the respective connection portions being electrically connected to each other through a connecting bump, or a semiconductor device comprising a plurality of semiconductor chips having connection portions, the respective connection portions being electrically connected to each other through a connecting bump,
wherein the connection portions and the connecting bump consist of metal,
the method comprising:
(a) a first step of press-bonding the semiconductor chip and the wiring circuit board or the semiconductor chips to each other so that the respective connection portions are in contact with the connecting bump with a semiconductor adhesive interposed therebetween, at a temperature lower than a melting point of the metal of the connecting bump, to obtain a temporarily connected body;
(b) a second step of sealing at least a part of the temporarily connected body with a sealing resin to obtain a sealed temporarily connected body; and
(c) a third step of heating the sealed temporarily connected body at a temperature equal to or higher than the melting point of the metal of the connecting bump, to obtain a sealed connected body.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein the first step comprises sandwiching the semiconductor chip and the wiring circuit board or the semiconductor chips with a pair of facing pressing members, and heating and pressurizing, to thereby press-bond the semiconductor chip and the wiring circuit board or the semiconductor chips to each other.
4. The method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor adhesive contains a compound having a weight average molecular weight of 10000 or less and a curing agent, and a melt viscosity at 80 to 130° C. is 6000 Pa·s or less.
5. The method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor adhesive contains a compound having a weight average molecular weight of 10000 or less, a curing agent, and a silanol compound represented by the following general formula (1):
[Chemical Formula 1]
R 1 —R 2 —Si(OH) 3 (1)
wherein R 1 represents an alkyl group or a phenyl group, and R 2 represents an alkylene group.
6. The method for manufacturing a semiconductor device according to claim 5 , wherein R 1 is a phenyl group.
7. The method for manufacturing a semiconductor device according to claim 5 , wherein the silanol compound is solid at 25° C.
8. The method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor adhesive contains a high molecular weight component having a weight average molecular weight of more than 10000.
9. The method for manufacturing a semiconductor device according to claim 8 , wherein the high molecular weight component is a component having a weight average molecular weight of 30000 or more and a glass transition temperature of 100° C. or lower.
10. The method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor adhesive is in a film form.
11. The method for manufacturing a semiconductor device according to claim 2 , wherein the first step comprises sandwiching the semiconductor chip and the wiring circuit board or the semiconductor chips with a pair of facing pressing members, and heating and pressurizing, to thereby press-bond the semiconductor chip and the wiring circuit board or the semiconductor chips to each other.
12. The method for manufacturing a semiconductor device according to claim 2 , wherein the semiconductor adhesive contains a compound having a weight average molecular weight of 10000 or less and a curing agent, and a melt viscosity at 80 to 130° C. is 6000 Pa·s or less.
13. The method for manufacturing a semiconductor device according to claim 2 , wherein the semiconductor adhesive contains a compound having a weight average molecular weight of 10000 or less, a curing agent, and a silanol compound represented by the following general formula (1):
[Chemical Formula 1]
R 1 —R 2 —Si(OH) 3 (1)
wherein R 1 represents an alkyl group or a phenyl group, and R 2 represents an alkylene group.
14. The method for manufacturing a semiconductor device according to claim 13 , wherein R 1 is a phenyl group.
15. The method for manufacturing a semiconductor device according to claim 13 , wherein the silanol compound is solid at 25° C.
16. The method for manufacturing a semiconductor device according to claim 2 , wherein the semiconductor adhesive contains a high molecular weight component having a weight average molecular weight of more than 10000.
17. The method for manufacturing a semiconductor device according to claim 16 , wherein the high molecular weight component is a component having a weight average molecular weight of 30000 or more and a glass transition temperature of 100° C. or lower.
18. The method for manufacturing a semiconductor device according to claim 2 , wherein the semiconductor adhesive is in a film form.