Dual selective deposition

1. A method for selectively depositing a first dielectric material on a first dielectric surface of a substrate and a second, different dielectric material on a second surface of the same substrate, wherein the second surface is a conductive surface, a metal surface, or an H-terminated surface, the method comprising:

selectively depositing the first dielectric material on the first surface of the substrate relative to the second surface by a first vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor and a second reactant; and

selectively depositing the second dielectric material on the second surface relative to the first surface by a second vapor deposition process comprising alternately and sequentially contacting the substrate with a third precursor and a fourth reactant.

2. The method of claim 1 , wherein the first precursor comprises a metal precursor and the second reactant comprises an oxygen source.

3. The method of claim 2 , wherein the metal precursor is selected from the group consisting of metal betadiketonate compounds, metal betadiketiminato compounds, metal aminoalkoxide compounds, metal amidinate compounds, metal cyclopentadienyl compounds, and metal carbonyl compounds.

4. The method of claim 1 , wherein the first dielectric material is deposited on the first surface of the substrate relative to the second surface of the substrate with a selectivity of at least about 80%.

5. The method of claim 1 , further comprising passivating the second surface prior to selectively depositing the first dielectric material.

6. The method of claim 5 , wherein the second surface is passivated such that it comprises alkylsilyl-groups.

7. The method of claim 1 , wherein at least one of selectively depositing the first dielectric material and selectively depositing the second dielectric material comprises an atomic layer deposition (ALD) process.

8. The method of claim 1 , wherein the wherein the first dielectric surface comprises SiO 2 , MgO, GeO 2 , or Al 2 O 3 .

9. The method of claim 1 , wherein the second surface is a metal surface and comprises a metal selected from a group consisting of Cu, Ru, Al, W, Ni, Co and Sb.

10. The method of claim 9 , wherein the metal surface is oxidized to provide a metal oxide surface.

11. The method of claim 10 , wherein the second surface is not conductive after being oxidized.

12. The method of claim 1 , wherein the second surface is a conductive surface comprising an oxide selected from the group consisting of CuO x , NiO x , CoO x , and RuO x .

13. The method of claim 2 , wherein the second surface is an H-terminated surface comprising —SiH 3 terminations.

14. The method of claim 1 , wherein the first surface and the second surface are adjacent on the substrate.

15. The method of claim 1 , wherein the first dielectric material is a metal oxide selected from a group consisting of germanium oxide, silicon oxide, nickel oxide, iron oxide, titanium oxide and cobalt oxide.

16. The method of claim 1 , wherein the first dielectric material comprises one or more of SbO x , GeO 2 , BiO x , MgO, SiO 2 , AlO 2 , and TiO 2 .

17. A method for selectively depositing two different materials on two different surfaces of a substrate, wherein a first surface is a surface comprising a dielectric material and a second surface is a conductive surface, a metal surface, or an H-terminated surface, the method comprising:

selectively depositing a first dielectric material on the first surface of the substrate relative to the second surface of the same substrate by a vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a first precursor and a second reactant; and

selectively depositing a second dielectric material on the second surface relative to the first surface by a vapor deposition process comprising at least one deposition cycle comprising alternately and sequentially contacting the substrate with a third precursor and a fourth reactant,

wherein the first dielectric material is deposited on the first surface of the substrate relative to the second surface of the substrate with a selectivity of at least about 80%.

18. The method of claim 17 , wherein the first dielectric material is selected from a group consisting of germanium oxide, silicon oxide, nickel oxide, iron oxide, titanium oxide or cobalt oxide.

19. The method of claim 17 , wherein the second reactant is selected from a group consisting of: water, ozone, molecular oxygen, N 2 O, NO, NO 2 , ClO 2 , HClO 4 , peracids, alcohols, oxygen radicals, hydroxyl radical, or H 2 O 2 .

20. The method of claim 17 , wherein one of selectively depositing the first material and selectively depositing the second material is a chemical vapor deposition (CVD) process.

21. The method of claim 17 , wherein the first dielectric material comprises one or more of SbO x , GeO 2 , BiO x , MgO, SiO 2 , AlO 2 , and TiO 2 .