Semiconductor image sensor
A BSI image sensor includes a substrate including a front side and a back side opposite to the front side, a pixel sensor disposed in the substrate, and a color filter disposed over the pixel sensor. The pixel sensor includes a plurality of first micro structures disposed over the back side of the substrate, and the color filter includes a plurality of second micro structures disposed over the back side of the substrate.
1. A back side illumination (BSI) image sensor comprising:
a substrate comprising a front side and a back side opposite to the front side;
a plurality of pixel sensors disposed in the substrate, and each of the pixel sensors comprising a photo-sensing device and a plurality of micro structures disposed over the photo-sensing device on the back side of the substrate;
an isolation structure disposed in the substrate;
a plurality of color filters comprising a side wall disposed over the pixel sensors on the back side of the substrate;
a grid disposed over the backside of the substrate comprising a side wall in contact with the side wall of the color filter; and
a plurality of micro-lenses disposed over the color filter,
wherein the micro structures and the photo-sensing device of one of the pixel sensors are isolated from the micro structures and the photo-sensing device of an adjacent pixel sensor by the isolation structure.
2. The BSI image sensor of claim 1 , wherein a sidewall of micro structure and a substrate-horizontal direction comprise at least an included angle, and the included angle is between about 48° and about 58°.
3. The BSI image sensor of claim 1 , wherein a height of the micro structures is between about 0.2 micrometers (μm) and about 0.7 μm.
4. The BSI image sensor of claim 1 , wherein a width of the micro structures is between about 0.3 μm and about 0.6 μm.
5. The BSI image sensor of claim 1 , wherein the micro structures are spaced apart from each other.
6. A back side illumination (BSI) image sensor comprising:
a substrate comprising a front side and a back side opposite to the front side;
a pixel sensor disposed in the substrate, and the pixel sensor comprising a plurality of first micro structures disposed over the back side of the substrate; and
a color filter disposed over the pixel sensor, and the color filter comprising a plurality of second micro structures disposed over the back side of the substrate;
wherein the color filter comprising a first surface facing the substrate and a second surface opposite to the first surface;
wherein the plurality of second micro structures disposed over the second surface of the color filter.
7. The BSI image sensor of claim 6 , wherein a sidewall of the first micro structure and a substrate-horizontal direction comprise at least a first included angle, and the first included angle is between about 48° and about 58°.
8. The BSI image sensor of claim 6 , wherein a height of the first micro structures is between about 0.2 μm and about 0.7 μm and a width of the first micros structures is between about 0.3 μm and about 0.6 μm.
9. The BSI image sensor of claim 6 , wherein the first micro structures are spaced apart from each other and the second micro structures are spaced apart from each other.
10. The BSI image sensor of claim 6 , wherein a sidewall of the second micro structures and a substrate-horizontal direction comprise a second included angle, and the second included angle is between about 35° and about 55°.
11. The BSI image sensor of claim 6 , wherein a height of the second micro structures is between about 0.2 μm and about 0.6 μm and a width of the second micro structures is between about 0.3 μm and about 0.6 μm.
12. A back side illumination (BSI) image sensor comprising:
a substrate comprising a front side and a back side opposite to the front side;
a pixel sensor disposed in the substrate;
a photodiode comprising a plurality of first micro structures and a plurality of second micro structures disposed in the pixel sensor, and the photodiode comprising a first surface facing the back side of the substrate and a second surface opposite the first surface facing the front side of the substrate; and
a color filter disposed over the pixel sensor, and the color filter comprising a plurality of third micro structures disposed over the back side of the substrate;
wherein the plurality of first micro structures is disposed on the first surface of the photodiode and the plurality of second micro structures is disposed on the second surface of the photodiode.
13. The BSI image sensor of claim 12 , a sidewall of the first micro structures and a substrate-horizontal direction comprise at least a first included angle, and the first included angle is between about 48° and about 58°.
14. The BSI image sensor of claim 12 , wherein a sidewall of the second micro structures and a substrate-horizontal direction comprise at least a second included angle, and the second included angle is between about 48° and about 58°.
15. The BSI image sensor of claim 12 , wherein, a sidewall of the third micro structures and a substrate-horizontal direction comprise at least one third included angle, and the third included angle is between about 35° and about 55°.
16. The BSI image sensor of claim 12 , wherein a height of the first micro structures is greater than a height of the second micro structures.
17. The BSI image sensor of claim 12 , wherein the first micro structures are spaced apart from each other, the second micro structures are spaced apart from each other, and the third micro structures are spaced apart from each other.
18. The BSI image sensor of claim 1 , wherein an entire height of the side wall of the grid extends along an entire height of the side wall of the color filer.
19. The BSI image sensor of claim 1 , further comprises a first coating disposed between the photo-sensing device and the isolation structure.
20. The BSI image sensor of claim 1 , further comprises a second coating extends an entire surface of the front side of the substrate.