FinFET SRAM having discontinuous PMOS fin lines

1. A device, comprising:

a first static random access memory (SRAM) cell, a second SRAM cell, and a third SRAM cell, wherein the second SRAM cell is disposed between the first SRAM cell and the third SRAM cell in a first direction;

a first fin structure extending in the first direction, wherein the first fin structure is partially disposed in the first SRAM cell;

a second fin structure extending in the first direction, wherein the second fin structure is partially disposed in the first SRAM cell and partially disposed in the second SRAM cell, and wherein the second fin structure is spaced apart from the first fin structure in a second direction different from the first direction;

a third fin structure extending in the first direction, wherein the third fin structure is partially disposed in the second SRAM cell and partially disposed in the third SRAM cell, wherein the second fin structure is spaced apart from the third fin structure in the second direction, and wherein the first fin structure is spaced apart from the third fin structure in the first direction;

a first circuit cell, a second circuit cell, and a third circuit cell, wherein the first, second, and third circuit cells are non-SRAM cells, and wherein the second circuit cell is disposed between the first circuit cell and the third circuit cell in the first direction;

a fifth fin structure that extends in the first direction, wherein the fifth fin structure is disposed in the first, second, and third circuit cells; and

a sixth fin structure that extends in the first direction, wherein the sixth fin structure is disposed in the first, second, and third circuit cells.

2. The device of claim 1 , wherein:

the first SRAM cell is contiguous with the second SRAM cell; and

the second SRAM cell is contiguous with the third SRAM cell.

3. The device of claim 1 , wherein the first fin structure is aligned with the third fin structure in the first direction.

4. The device of claim 1 , wherein:

a first end of the first fin structure is dispose in the first SRAM cell;

a first end of the second fin structure is disposed in the first SRAM cell;

a second end of the second fin structure is disposed in the second SRAM cell;

a first end of the third fin structure is disposed in the second SRAM cell; and

a second end of the third fin structure is disposed in the third SRAM cell.

5. The device of claim 1 , wherein:

the first SRAM cell, the second SRAM cell, and the third SRAM cell include a P-type well and an N-type well; and

the first fin structure, the second fin structure, and the third fin structure are each disposed over the N-type well but not over the P-type well.

6. The device of claim 5 , further comprising a fourth fin structure that extends in the first direction, wherein the fourth fin structure is disposed over the P-type well but not over the N-type well.

7. The device of claim 6 , wherein the fourth fin structure is disposed over the first SRAM cell, the second SRAM cell, and the third SRAM cell.

8. The device of claim 6 , wherein:

the first SRAM cell, the second SRAM cell, and the third SRAM cell each include a plurality of pull-up (PU) transistors, a plurality of pull-down (PD) transistors, and a plurality of pass-gate (PG) transistors; and

the first fin structure, the second fin structure, and the third fin structure are fin structures for the PU transistors; and

the fourth fin structure is a fin structure for the PD transistors or the PG transistors.

9. The device of claim 1 , wherein:

the first, second, and third circuit cells include a P-type well and an N-type well;

the fifth fin structure is disposed over the P-type well; and

the sixth fin structure is disposed over the N-type well.

10. The device of claim 1 , wherein the first, second, and third circuit cells each include one or more inverter gates, one or more NAND gates, or one or more NOR gates.

11. A device, comprising:

a first static random access memory (SRAM) cell, a second SRAM cell, and a third SRAM cell, wherein the second SRAM cell is disposed between the first SRAM cell and the third SRAM cell in a first direction, and wherein the second SRAM cell abuts the first SRAM cell and the third SRAM cell, and wherein a P-well and an N-well each span through the first SRAM cell, the second SRAM cell, and the third SRAM cell;

a first fin structure extending in the first direction, wherein a first segment of the first fin structure is located over the N-well in the first SRAM cell;

a second fin structure extending in the first direction, wherein a first segment of the second fin structure is located over the N-well in the first SRAM cell, and wherein a second segment of the second fin structure is located over the N-well in the second SRAM cell;

a third fin structure extending in the first direction, wherein a first segment of the third fin structure is located over the N-well in the second SRAM cell, and wherein a second segment of the third fin structure is located over the N-well in the third SRAM cell; and

a plurality of logic circuit cells that include one or more inverter gates, one or more NAND gates, or one or more NOR gates;

wherein:

the first fin structure is aligned with the third fin structure but is separated from the third fin structure by a gap;

the second fin structure is misaligned with the first fin structure and with the third fin structure;

the plurality of logic circuit cells are arranged into a column that extends in the first direction; and

at least one continuous fin structure extends through the plurality of logic circuit cells in the first direction.

12. The device of claim 11 , wherein the gap faces the second fin structure in a second direction different from the first direction.

13. The device of claim 12 , wherein the gap faces a middle portion of the second fin structure, the middle portion spanning through the first SRAM cell and the second SRAM cell.

14. The device of claim 11 , wherein:

the first fin structure terminates in the first SRAM cell;

the second fin structure terminates in both the first SRAM cell and the second SRAM cell; and

the third fin structure terminates in both the second SRAM cell and the third SRAM cell.

15. The device of claim 11 , further comprising a fourth fin structure that is located over the P-well in the first SRAM cell, the P-well in the second SRAM cell, and the P-well in the third SRAM cell.

16. The device of claim 15 , wherein the fourth fin structure has a greater dimension in the first direction than the first fin structure, the second fin structure, or the third fin structure.

17. The device of claim 15 , wherein:

the first SRAM cell, the second SRAM cell, and the third SRAM cell each include a plurality of pull-up (PU) transistors, a plurality of pull-down (PD) transistors, and a plurality of pass-gate (PG) transistors; and

the first fin structure, the second fin structure, and the third fin structure are fin structures for the PU transistors; and

the fourth fin structure is a fin structure for the PD transistors or the PG transistors.

18. A device, comprising:

a P-well and an N-well;

an array of static random access memory (SRAM) cells arranged into a first column that spans in a first direction, wherein each of the SRAM cells is located over both the P-well and the N-well;

a plurality of first fin structures located over the N-well, wherein each of the first fin structures extends in the first direction and spans over more than one, but no more than two, of the SRAM cells, wherein a respective gap separates each pair of adjacently located fin structures;

an array of non-SRAM cells arranged into a second column that spans in the first direction; and

a second fin structure that extends in the first direction and that spans over at least three contiguous ones of the non-SRAM cells.

19. The device of claim 18 , wherein the second fin structure is located over the N-well, and wherein the device further comprises a third fin structure that extends in the first direction and spans over at least three contiguous ones of the non-SRAM cells, wherein the third fin structure is located over the P-well.

20. The device of claim 18 , further comprising a fourth fin structure that extends in the first direction and that spans over at least three contiguous ones of the SRAM cells, wherein the fourth fin structure is separated from the first fin structures in a second direction different from the first direction.