Bonded bodies and acoustic wave devices
An object is to improve insulation in a bonding layer and to improve a bonding strength of a supporting body and piezoelectric single crystal substrate, in a bonded body having the supporting body made of a polycrystalline material or single crystal material, the piezoelectric single crystal substrate and the bonding layer provided between the supporting body and piezoelectric single crystal substrate, wherein the bonded body includes the supporting body, piezoelectric single crystal substrate and the bonding layer provided between the supporting body and piezoelectric single crystal substrate, and the bonding layer has a composition of Si (1-x) O x (0.008≤x≤0.408).
1. A bonded body comprising:
a supporting body comprising a polycrystalline ceramic material or a single crystal material;
a piezoelectric single crystal substrate; and
a bonding layer provided between said supporting body and said piezoelectric single crystal substrate, said bonding layer having a composition of Si (1-x) O x (0.008≤x≤0.408).
2. The bonded body of claim 1 , wherein said bonding layer has an electrical resistivity of 4.9×10 3 Ω·cm or higher.
3. The bonded body of claim 1 , wherein a surface of said bonding layer and a surface of said piezoelectric single crystal substrate are bonded by direct bonding.
4. The bonded body of claim 1 , wherein a surface of said supporting body and said bonding layer is bonded by direct bonding.
5. The bonded body of claim 1 , wherein said supporting body comprises a material selected from the group consisting of silicon, sapphire, mullite, cordierite, translucent alumina and sialon.
6. The bonded body of claim 1 , wherein said piezoelectric single crystal substrate comprises lithium niobate, lithium tantalate or lithium niobate-lithium tantalate solid solution.
7. An acoustic wave device comprising:
said bonded body of claim 1 ; and
an electrode provided on said piezoelectric single crystal substrate.