Semiconductor device and method of manufacturing the same
In one embodiment, a semiconductor device includes a first insulator. The device further includes a metal layer that includes a first metal layer provided on a surface of the first insulator, and a second metal layer provided on a surface of the first metal layer and containing a first metallic element and oxygen or containing aluminum and nitrogen, or includes a third metal layer provided on the surface of the first insulator and containing a second metallic element, aluminum and nitrogen. The device further includes an interconnect material layer provided on a surface of the metal layer.
1. A semiconductor device comprising:
a first insulator;
a metal layer that includes a first metal layer provided on a surface of the first insulator, and a second metal layer provided on a surface of the first metal layer and containing a first metallic element and oxygen or containing aluminum and nitrogen, or includes a third metal layer provided on the surface of the first insulator and containing a second metallic element, aluminum and nitrogen;
an interconnect material layer provided on a surface of the metal layer;
a charge storage layer provided on a surface of the metal layer via the first insulator, the charge storage layer being different from the metal layer; and
a semiconductor layer provided on a surface of the charge storage layer via a second insulator.
2. The device of claim 1 , wherein the second metal layer is an aluminum oxide film, a titanium oxide film, a tantalum oxide film, a hafnium oxide film, a zirconium oxide film or an aluminum nitride film.
3. The device of claim 1 , wherein the first metal layer contains titanium and nitrogen.
4. The device of claim 1 , wherein the first insulator contains aluminum and oxygen.
5. The device of claim 1 , wherein the second metallic element is titanium, tantalum, hafnium, zirconium, vanadium or niobium.
6. The device of claim 1 , wherein a ratio of concentration of aluminum to a total concentration of the second metallic element and aluminum in the third metal layer is 0.55 to 0.75.
7. The device of claim 1 , wherein the second metal layer further contains a semiconductor element.
8. The device of claim 1 , wherein the interconnect material layer further contains nitrogen.
9. The device of claim 8 , wherein a nitrogen concentration in the interconnect material layer is 1×10 19 to 2×10 20 atoms/cm 3 .
10. The device of claim 1 , wherein the interconnect material layer further contains fluorine and/or chlorine.
11. The device of claim 10 , wherein a fluorine concentration and/or a chlorine concentration in the interconnect material layer is 1×10 18 atoms/cm 3 or less.
12. The device of claim 10 , wherein the interconnect material layer includes a first interconnect material layer that contains chlorine, and a second interconnect material layer that contains fluorine.
13. The semiconductor device comprising:
a first insulator;
a metal layer provided on a surface of the first insulator and containing aluminum and oxygen or containing aluminum and nitrogen;
an interconnect material layer in contact with a surface of the metal layer and containing nitrogen;
a charge storage layer provided on a surface of the metal layer via the first insulator, the charge storage layer being different from the metal layer; and
a semiconductor layer provided on a surface of the charge storage layer via a second insulator.
14. The device of claim 13 , wherein the interconnect material layer further contains fluorine and/or chlorine.
15. The device of claim 14 , wherein the interconnect material layer includes a first interconnect material layer that contains nitrogen and chlorine, and a second interconnect material layer that contains nitrogen and fluorine.
16. A method of manufacturing a semiconductor device, comprising:
forming a first insulator;
successively forming a charge storage layer, a second insulator, and a semiconductor layer on a surface of the first insulator;
forming a metal layer that includes a first metal layer provided on a surface of the first insulator, and a second metal layer provided on a surface of the first metal layer and containing a first metallic element and oxygen or containing aluminum and nitrogen, or includes a third metal layer provided on the surface of the first insulator and containing a second metallic element, aluminum and nitrogen, the metal layer being different from the charge storage layer; and
forming an interconnect material layer on a surface of the metal layer.
17. The method of claim 16 , wherein the second metal layer is an aluminum oxide film, a titanium oxide film, a tantalum oxide film, a hafnium oxide film, a zirconium oxide film or an aluminum nitride film.
18. The method of claim 16 , wherein the interconnect material layer further contains nitrogen.
19. The method of claim 16 , wherein the interconnect material layer further contains fluorine and/or chlorine.
20. A semiconductor device comprising:
an interconnect;
a first insulator provided on a surface of the interconnect;
a metal layer that includes a first metal layer provided on a surfaces of the interconnect and the first insulator, and a second metal layer provided on a surface of the first metal layer and containing a first metallic element and oxygen or containing aluminum and nitrogen, or includes a third metal layer provided on the surfaces of the interconnect and the first insulator and containing a second metallic element, aluminum and nitrogen, the metal layer being different from the interconnect and electrically connected to the interconnect; and
an interconnect material layer provided on a surface of the metal layer.