Gas injector
Disclosed is a gas injector for a semiconductor processing system comprising a tube, and at least one nozzle head mounted on a downstream end of the tube wherein the at least one nozzle allows a fluid communication to discharge a gas from a upstream end of the tube through the at least one nozzle of the gas injector to ambient atmosphere surrounding the downstream end of the tube, wherein the at least one nozzle comprises: a body, and at least one adaptor comprising a plurality of flow regulation components to alter a flow direction of the gas at the downstream end, wherein the plurality of flow regulation components are each constructed and arranged such that a film buildup on inner surfaces of the gas injector is reduced.
1. A gas injector for a semiconductor processing system, comprising:
a tube, and
at least one nozzle mounted on a downstream end of the tube wherein the at least one nozzle allows a fluid communication to discharge a gas from a upstream end of the tube through the at least one nozzle of the gas injector to ambient atmosphere surrounding the downstream end of the tube, wherein the at least one nozzle comprises:
a body, and
at least one adaptor comprising a plurality of flow regulation components to alter a flow direction of the gas at the downstream end,
wherein the plurality of flow regulation components each have different geometric configurations from each other such that a height and sidewall angle of each of the plurality of flow regulation components as measured from a sidewall of the at least one nozzle progressively increases toward a downstream end of the at least one nozzle.
2. The gas injector of claim 1 , wherein the at least one adaptor is disposed inside the body of the at least one nozzle.
3. The gas injector of claim 2 , wherein the plurality of flow regulation components is configured in series along the inner surface of the body.
4. The gas injector of claim 1 , wherein each of the plurality of flow regulation components comprises a first surface and a second surface.
5. The gas injector of claim 4 , wherein the first surface is configured facing a gas flow in the gas injector and the second surface is configured facing a wafer stage.
6. The gas injector of claim 4 , wherein the film buildup is formed on the second surface of the plurality of flow regulation components of the at least one adaptor.
7. A plasma processing system, comprising:
a gas delivery system configured to provide at least one gas;
a semiconductor processing chamber coupled to the gas delivery system;
a gas injector configured to couple the gas delivery system and the semiconductor processing chamber, wherein the gas injector comprises a tube and at least one nozzle mounted on a downstream end of the tube wherein the at least one nozzle allows a fluid communication to discharge a gas from a upstream end of the tube through the at least one nozzle of the gas injector to ambient atmosphere surrounding the downstream end of the tube, wherein the at least one nozzle comprises: a body, and at least one adaptor, wherein the adaptor comprises a plurality of flow regulation components to alter a flow direction of the gas at the downstream end, wherein the plurality of flow regulation components each have different geometric configurations from each other such that a height and sidewall angle of each of the plurality of flow regulation components as measured from a sidewall of the at least one nozzle progressively increases toward a downstream end of the at least one nozzle.
8. The system of claim 7 , wherein the at least one adaptor is disposed inside the body of the at least one nozzle.
9. The plasma processing system of claim 8 , wherein the plurality of flow regulation components is configured in series along the inner surface of the body.
10. The system of claim 7 , wherein each of the plurality of flow regulation components comprises a first surface and a second surface.
11. The system of claim 10 , wherein the first surface is configured facing a gas flow in the body of the gas injector and the second surface is configured facing a wafer stage.
12. The system of claim 10 , wherein the film buildup is formed on the second surface of the plurality of flow regulation components of the at least one adaptor.
13. A gas injector for a semiconductor processing system, comprising:
a tube, and
at least one nozzle mounted on a downstream end of the tube wherein the at least one nozzle allows a fluid communication to discharge a gas from a upstream end of the tube through the at least one nozzle of the gas injector to ambient atmosphere surrounding the downstream end of the tube, wherein the at least one nozzle comprises:
a body, and
at least one adaptor comprising a plurality of flow regulation components to alter a flow direction of the gas at the downstream end,
wherein the plurality of flow regulation components comprises a first flow regulation component having a first height, a first sidewall angle and a first top curvature, and a second flow regulation component having a second height larger than the first height, a second sidewall angle larger than the first sidewall angle and a second top curvature different from the first top curvature, wherein the second flow regulation component is downstream from the first flow regulation component and has a same width as the first flow regulation component.
14. The gas injector of claim 13 , wherein the at least one adaptor is disposed inside the body of the at least one nozzle.
15. The gas injector of claim 14 , wherein the plurality of flow regulation components is configured in series along the inner surface of the body.
16. The gas injector of claim 13 , wherein each of the plurality of flow regulation components comprises a first surface and a second surface.
17. The gas injector of claim 16 , wherein the first surface is configured facing the original gas flow in the gas injector and the second surface is configured facing a wafer stage.
18. The gas injector of claim 16 , wherein the second surface is configured to hold a film buildup thereon.