METHOD FOR PRODUCING CRYSTALLINE FILM
According to an aspect of a present inventive subject matter, a method for producing a crystalline film includes gasifying a metal source to turn the metal source into a metal-containing raw-material gas; supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto a substrate; and supplying a reactive gas into the reaction chamber onto the substrate to form a crystalline film under a gas flow of the reactive gas.
1 . A method for producing a crystalline film comprising:
gasifying a metal source to turn the metal source into a metal-containing raw-material gas;
supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto a substrate; and
supplying a reactive gas into the reaction chamber onto the substrate to form a crystalline film under a gas flow of the reactive gas.
2 . The method of claim 1 , wherein
the reactive gas is an etching gas.
3 . The method of claim 1 , wherein
the reactive gas comprises at least one selected from among hydrogen halide and groups comprising halogen and hydrogen.
4 . The method of claim 1 , wherein
The reactive gas comprises hydrogen halide.
5 . The method of claim 1 , wherein
the substrate comprises an uneven portion arranged on a surface of the substrate.
6 . The method of claim 1 , wherein
the uneven portion comprises at least one mask.
7 . The method of claim 1 , wherein
the uneven portion comprises two or more openings.
8 . The method of claim 1 , wherein
the substrate is a patterned sapphire substrate.
9 . The method of claim 1 , wherein
the substrate is heated at a temperature that is in a range of 400° C. to 700° C.
10 . The method of claim 1 , wherein
the metal source comprises gallium.
11 . The method of claim 1 , wherein
the gasifying the metal source is done by halogenating the metal source.
12 . The method of claim 1 , wherein
the oxygen-containing raw-material gas comprises at least one selected from among oxygen (O 2 ), water (H 2 O) and nitrous oxide (N 2 O).
13 . The method of claim 1 , wherein
the substrate comprises a corundum structure.
14 . The method of claim 1 , wherein
the crystalline film has a corundum structure.
15 . The method of claim 1 , wherein
the substrate further comprises a buffer layer on at least a surface of the substrate.
16 . The method of claim 1 further comprising:
forming a buffer layer on at least a surface of the substrate by use of a mist chemical vapor deposition method.
17 . A method for producing a crystalline film comprising:
forming an uneven portion on a surface of a substrate;
gasifying a metal source to turn the metal source into a metal-containing raw-material gas;
supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto the uneven portion on the surface of the substrate; and
supplying a reactive gas into the reaction chamber onto the uneven portion on the surface of the substrate to form a crystalline film under a gas flow of the reactive gas.
18 . The method of claim 17 further comprising:
forming an uneven portion on a surface of a crystalline film that is a first crystalline film; and
gasifying a metal source to turn the metal source into a metal-containing raw-material gas;
supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto the uneven portion on the surface of the substrate; and
supplying a reactive gas into the reaction chamber onto the uneven portion on the surface of the substrate to form a second crystalline film under a gas flow of the reactive gas.
19 . A method for producing a crystalline film comprising:
forming a buffer layer on at least a surface of the substrate by use of a mist chemical vapor deposition method;
forming an uneven portion on a surface of the buffer layer;
gasifying a metal source to turn the metal source into a metal-containing raw-material gas;
supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto the uneven portion on the surface of the buffer layer of the substrate; and
supplying a reactive gas into the reaction chamber onto the uneven portion on the surface of the buffer layer of the substrate to form a crystalline film under a gas flow of the reactive gas.
20 . The method of claim 19 , further comprising:
forming an uneven portion on a surface of a crystalline film that is a first crystalline film; and
gasifying a metal source to turn the metal source into a metal-containing raw-material gas;
supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto the uneven portion on the surface of the substrate; and
supplying a reactive gas into the reaction chamber onto the uneven portion on the surface of the substrate to form a second crystalline film under a gas flow of the reactive gas.