METHOD FOR PRODUCING CRYSTALLINE FILM
According to an aspect of a present inventive subject matter, a method for producing a crystalline film includes; gasifying a metal source containing a metal to turn the metal source into a metal-containing raw-material gas; supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto a substrate including a buffer layer; and supplying a reactive gas into the reaction chamber onto the substrate to form a crystalline film on the substrate under a gas flow of the reactive gas.
1 . A method for producing a crystalline film comprising:
gasifying a metal source comprising a metal to turn the metal source into a metal-containing raw-material gas;
supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto a substrate comprising a buffer layer; and
supplying a reactive gas into the reaction chamber onto the substrate to form a crystalline film on the substrate under a gas flow of the reactive gas.
2 . The method of claim 1 , wherein
the buffer layer comprised in the substrate is formed by use of a mist chemical vapor deposition method.
3 . The method of claim 1 , wherein
the crystalline film is formed by use of a halide vapor phase epitaxy method.
4 . The method of claim 1 , wherein
the crystalline film is a layered film comprising the substrate.
5 . The method of claim 1 further comprising:
separating the crystalline film by removing at least the substrate.
6 . A method for producing a crystalline film comprising:
forming a buffer layer on a substrate;
gasifying a metal source comprising a metal to turn the metal source into a metal-containing raw-material gas;
supplying the metal-containing raw-material gas and an oxygen-containing raw-material gas into a reaction chamber onto the buffer layer on the substrate; and
supplying a reactive gas into the reaction chamber onto the buffer layer on the substrate to form a crystalline film on the buffer layer of the substrate under a gas flow of the reactive gas.
7 . The method of claim 6 , wherein
the forming the buffer layer on the substrate is done by use of a mist chemical vapor deposition method.
8 . The method of claim 6 , wherein
the buffer layer comprises a part of the metal comprised in the metal source.
9 . The method of claim 6 , wherein
a difference between a lattice constant of the buffer layer and a lattice constant of the crystalline film is within 20%.
10 . The method of claim 6 , wherein
the reactive gas is an etching gas.
11 . The method of claim 6 , wherein
the reactive gas comprises at least one selected from among hydrogen halide and a group comprising halogen and hydrogen.
12 . The method of claim 6 , wherein
the reactive gas comprises hydrogen halide.
13 . The method of claim 6 , wherein
the substrate comprises a patterned sapphire substrate.
14 . The method of claim 6 , wherein
the substrate is heated up to a temperature that is in a range of 400° C. to 700° C. to form the crystalline film under the gas flow of the reactive gas.
15 . The method of claim 6 ,
wherein the metal source comprises a gallium source, and
wherein the metal-containing raw-material gas comprises a gallium-containing raw-material gas.
16 . The method of claim 6 , wherein
the gasifying the metal source is done by halogenating the metal source.
17 . The method of claim 6 , wherein
the oxygen-containing raw-material gas comprises at least one selected from among oxygen (O 2 ), water (H 2 O) and nitrous oxide (N 2 O).
18 . The method of claim 6 , wherein
the substrate comprises a corundum structure, and the crystalline film comprises a corundum structure.
19 . The method of claim 6 , wherein
the crystalline film is a layered film comprising the substrate.
20 . The method of claim 6 further comprising:
separating the crystalline film by removing at least the substrate.
21 . The method of claim 6 further comprising:
separating the crystalline film from the buffer layer on the substrate.