Ion-implanted thermal barrier
Ion implantation can be used to define a thermal dissipation path that allows for better thermal isolation between devices in close proximity on a microelectronics chip, thus providing a means for higher device density combined with better performance.
1. An ion-implanted thermal barrier, comprising an ion-implanted region between a hot device and a cool device on a substrate.
2. The ion-implanted thermal barrier of claim 1 , wherein the implanted ion comprises a noble gas ion.
3. The ion-implanted thermal barrier of claim 2 , wherein the noble gas ion comprises krypton or xenon.
4. The ion-implanted thermal barrier of claim 1 , wherein the substrate comprises silicon, silicon carbide, diamond, gallium nitride, or gallium arsenide.
5. The ion-implanted thermal barrier of claim 1 , wherein the dose of the ion implant is greater than 1×10 15 ions/cm 2 .
6. The ion-implanted thermal barrier of claim 1 , wherein the substrate comprises a microelectronic chip.
7. The ion-implanted thermal barrier of claim 1 , wherein the range of the implanted ion is less than the thickness of the substrate.
8. The ion-implanted thermal barrier of claim 1 , wherein the range of the implanted ion is greater than the depth of the hot device or the cold device in the substrate.