Defect offset correction

1. A method of defect review, comprising:

receiving a defect map from a defect scanner, wherein the defect map comprises at least one defect location of a semiconductor workpiece;

annotating the defect map with a reference fiducial location of the semiconductor workpiece;

determining a detected fiducial location within image data of the semiconductor workpiece, wherein the detected fiducial location is based on an alphanumeric pattern provided in a scribe line of the semiconductor workpiece;

determining an offset correction based on comparing the detected fiducial location with the reference fiducial location;

producing a corrected defect map by applying the offset correction to the defect map, wherein the applying the offset correction translocates the at least one defect location; and

transferring the corrected defect map to a defect reviewer configured to perform root cause analysis based on the corrected defect map.

2. The method of claim 1 , wherein the detected fiducial location is based on detection of a fiducial pattern within the image data.

3. The method of claim 2 , wherein the fiducial pattern is overlaid with a scale or a cursor.

4. The method of claim 1 , further comprising determining the detected fiducial location within image data of the semiconductor workpiece centered at the reference fiducial location.

5. The method of claim 1 , wherein the determining the detected fiducial location comprises determining whether a possible fiducial pattern found in the image data overlaps with a fiducial contour.

6. The method of claim 1 , wherein the determining the detected fiducial location comprises determining whether a percentage of overlap between a possible fiducial pattern and a fiducial contour exceeds an edge threshold.

7. The method of claim 6 , wherein the fiducial contour comprises at least one contour feature.

8. The method of claim 1 , further comprising determining multiple detected fiducial locations within the image data, wherein the offset correction is based on comparing each of the multiple detected fiducial locations with respective reference fiducial locations.

9. A method for defect map correction, comprising:

receiving a defect map from a defect scanner, wherein the defect map comprises a plurality of defect locations;

annotating the defect map with a plurality of reference fiducial locations;

determining multiple detected fiducial locations within image data of a semiconductor workpiece, wherein each of the multiple detected fiducial locations is based on respective multiple alphanumeric patterns provided in one or more scribe lines of the semiconductor workpiece;

determining a plurality of offset corrections based on comparing each of the multiple detected fiducial locations with respective reference fiducial locations; and

producing a corrected defect map by applying the plurality of offset corrections to the defect map, wherein the applying the plurality of offset corrections translocates each of the plurality of defect locations.

10. The method of claim 9 , wherein the plurality of reference fiducial locations comprises six reference fiducial locations.

11. The method of claim 9 , wherein the applying the plurality of offset corrections to the defect map is performed for each of the plurality of offset corrections serially.

12. The method of claim 9 , wherein each of the multiple detected fiducial locations are determined based on detection of a fiducial pattern within the image data.

13. The method of claim 9 , further comprising:

transferring the corrected defect map to a defect reviewer configured to perform root cause analysis based on the corrected defect map, wherein the root cause analysis analyzes at least one defect at each of the plurality of defect locations to determine at least one common cause of the at least one defect at each of the plurality of defect locations.

14. A defect offset module, comprising:

a network connection module configured to:

access a defect map, wherein the defect map comprises at least one defect location;

at least one processor configured to:

annotate the defect map with a reference fiducial location;

determine a detected fiducial location within image data of a semiconductor workpiece, wherein the detected fiducial location is based on an alphanumeric pattern provided in a scribe line of the semiconductor workpiece;

determine an offset correction based on comparing the detected fiducial location with an associated reference fiducial location; and

produce a corrected defect map by applying the offset correction to the defect map, wherein the applying the offset correction translocates the at least one defect location, wherein the network connection module is further configured to provide the corrected defect map to a defect reviewer configured to perform root cause analysis based on the corrected defect map.

15. The defect offset module of claim 14 , wherein the network connection module is at least one of: a network bus and network transceiver.

16. The defect offset module of claim 14 , wherein the detected fiducial location is based on detection of a fiducial pattern within the image data.

17. The defect offset module of claim 14 , wherein the defect offset module is contained within a single housing with at least one of: a defect scanner and the defect reviewer.

18. The defect offset module of claim 14 , wherein the at least one processor is further configured to compare a possible fiducial pattern, found in the image data, with a fiducial contour.

19. The defect offset module of claim 14 , wherein the network module is further configured to annotate the defect map with a plurality of reference fiducial locations.

20. The defect offset module of claim 14 , wherein the network module is further configured to transfer the corrected defect map to a defect reviewer configured to perform root cause analysis based on the corrected defect map, wherein the root cause analysis analyzes at least one defect at each of the plurality of defect locations to determine at least one common cause of the at least one defect at each of the plurality of defect locations.