Non-volatile memory device and operating method thereof for performing an erase detect operation
An operating method of a non-volatile memory device including a plurality of memory cells respectively connected to a plurality of word lines is provided. The operating method includes applying an erase detect voltage to a selected word line of the plurality of word lines to perform an erase detect operation on memory cells connected to the selected word line in response to a program command, applying a program voltage to the selected word line after the erase detect operation, and counting a number of undererased cells of the memory cells on which the erase detect operation has been performed.
1. An operating method of a non-volatile memory device including a plurality of memory cells respectively connected to a plurality of word lines, the operating method comprising:
in response to a program command, applying an erase detect voltage to a selected word line of the plurality of word lines to perform an erase detect operation on the memory cells connected to the selected word line;
after the erase detect operation, applying a program voltage to the selected word line; and
counting a number of undererased cells of the memory cells on which the erase detect operation has been performed.
2. The operating method of claim 1 , further comprising, in response to the number of the undererased cells being greater than a reference bit count, ending a program operation triggered by the program command.
3. The operating method of claim 1 , further comprising, in response to the number of the undererased cells being greater than a reference bit count, processing a memory block connected to the selected word line as a fail block.
4. The operating method of claim 1 , wherein a voltage level of the erase detect voltage is less than a verify voltage level having a lowest program state for the memory cells.
5. The operating method of claim 1 , wherein a voltage level of the erase detect voltage is greater than a verify voltage level having an erase state for the memory cells.
6. The operating method of claim 1 , wherein
a voltage level of the erase detect voltage is the same as a verify voltage of a lowest program state for the memory cells, and
a develop time of a sensing node in the erase detect operation is shorter than a develop time of a sensing node in a verify operation having the lowest program state.
7. The operating method of claim 1 , wherein the counting is performed substantially simultaneously with the applying of the program voltage.
8. The operating method of claim 1 , further comprising, after the applying of the program voltage, applying a program verify voltage to the selected word line.
9. The operating method of claim 1 , wherein
a program operation triggered by the program command includes a plurality of program loops which are sequentially performed, and each of the plurality of program loops includes a program perform interval and a program verify interval after the program perform interval, and
the counting is performed in a program perform interval of a first program loop of the plurality of program loops.
10. The operating method of claim 1 , further comprising:
receiving the program command, the receiving of the program command including
receiving a first program command, an address, and least significant bit (LSB) data, and
receiving a second program command, the address, and most significant bit (MSB) data,
wherein the performing of the erase detect operation is performed after the receiving of the first program command.
11. An operating method of a non-volatile memory device including a plurality of memory cells respectively connected to a plurality of word lines, the operating method comprising:
in response to a program command, applying a program voltage to a selected word line of the plurality of word lines;
after the applying of the program voltage, applying an erase detect voltage to the selected word line to perform an erase detect operation on program-inhibited memory cells of memory cells connected to the selected word line; and
counting a number of undererased cells of the program-inhibited memory cells on which the erase detect operation has been performed.
12. The operating method of claim 11 , further comprising, in response to the number of the undererased cells being greater than a reference bit count, ending a program operation triggered by the program command.
13. The operating method of claim 11 , further comprising:
after the performing of the erase detect operation, applying a program verify voltage to the selected word line to perform a program verify operation on programmed memory cells of the memory cells connected to the selected word line.
14. The operating method of claim 11 , further comprising:
after the applying of the program voltage and before the performing of the erase detect operation, applying a program verify voltage to the selected word line to perform a program verify operation on programmed memory cells of the memory cells connected to the selected word line.
15. The operating method of claim 11 , further comprising applying an additional program voltage, having a voltage level greater than the program voltage, to the selected word line,
wherein the counting is performed substantially simultaneously with the applying of the additional program voltage.
16. An operating method of a non-volatile memory device including a plurality of memory cells respectively connected to a plurality of word lines, the operating method comprising:
in response to a program command, applying a program voltage to a selected word line of the plurality of word lines;
using a program verify voltage, performing a program verify operation on programmed memory cells of memory cells connected to the selected word line;
using the program verify voltage, performing an erase detect operation on program-inhibited memory cells of the memory cells connected to the selected word line; and
counting a number of undererased cells of the program-inhibited memory cells on which the erase detect operation has been performed.
17. The operating method of claim 16 , further comprising, in response to the number of the undererased cells is greater than a reference bit count, ending a program operation triggered by the program command.
18. The operating method of claim 16 , wherein
in the erase detect operation, a develop interval for the program-inhibited memory cells corresponds to a first develop time, and
in the program verify operation, a develop interval for the programmed memory cells corresponds to a second develop time, longer than the first develop time.
19. The operating method of claim 16 , wherein the program-inhibited memory cells include memory cells where a target state is an erase state.
20. The operating method of claim 16 , further comprising applying an additional program voltage, which is greater than the program voltage, to the selected word line,
wherein the counting is performed substantially simultaneously with the applying of the additional program voltage.