Semiconductor device

1. A semiconductor device comprising:

an n-type semiconductor layer;

an i-type semiconductor layer; and

a p-type semiconductor layer;

wherein the i-type semiconductor layer has a first carrier concentration,

wherein the n-type semiconductor layer has a second carrier concentration that is larger than the first carrier concentration,

wherein the p-type semiconductor layer has a third carrier concentration that is larger than the first carrier concentration,

wherein the i-type semiconductor layer comprises an oxide semiconductor as a major component,

wherein the oxide semiconductor that is comprised as the major component of the i-type semiconductor layer comprises at least one metal selected from among aluminum, indium, and gallium, and

wherein a breakdown voltage of the semiconductor device is 400 V or more.

2. The semiconductor device according to claim 1 ,

wherein the i-type semiconductor layer is arranged on the n-type semiconductor layer, and

wherein the p-type semiconductor layer is arranged on the i-type semiconductor layer to form a PiN structure.

3. The semiconductor device according to claim 1 ,

wherein the oxide semiconductor that is comprised as the major component of the i-type semiconductor layer comprises gallium.

4. The semiconductor device according to claim 1 ,

wherein the oxide semiconductor that is comprised as the major component of the i-type semiconductor layer comprises a corundum structure, a β-gallia structure or an ε-type structure.

5. The semiconductor device according to claim 1 ,

wherein the n-type semiconductor layer comprises an oxide semiconductor as a major component, and

wherein the oxide semiconductor that is comprised as the major component of the n-type semiconductor layer comprises gallium.

6. The semiconductor device according to claim 5 ,

wherein the oxide semiconductor that is comprised as the major component of the n-type semiconductor layer comprises a corundum structure, a β-gallia structure or an ε-type structure.

7. The semiconductor device according to claim 1 ,

wherein the p-type semiconductor layer comprises an oxide semiconductor as a major component, and

wherein the oxide semiconductor that is comprised as the major component of the p-type semiconductor layer comprises a d-block metal in the periodic table.

8. The semiconductor device according to claim 7 ,

wherein the oxide semiconductor that is comprised as the major component of the p-type semiconductor layer comprises a metal of Group 9 of the periodic table.

9. The semiconductor device according to claim 7 ,

wherein the oxide semiconductor that is comprised as the major component of the p-type semiconductor layer comprises a corundum structure, a β-gallia structure or an ε-type structure.

10. The semiconductor device according to claim 1 , further comprising:

a reduced surface field (RESURF) region.

11. The semiconductor device according to claim 1 , further comprising

a guard ring.

12. The semiconductor device according to claim 1 ,

wherein the semiconductor device is a diode.

13. The semiconductor device according to claim 1 ,

wherein the semiconductor device is a power device.

14. A semiconductor device comprising:

an n-type semiconductor layer;

an i-type semiconductor layer; and

a p-type semiconductor layer,

wherein the i-type semiconductor layer has a first carrier concentration,

wherein the n-type semiconductor layer has a second carrier concentration that is larger than the first carrier concentration,

wherein the p-type semiconductor layer has a third carrier concentration that is larger than the first carrier concentration,

wherein the p-type semiconductor layer comprises an oxide semiconductor as a major component,

wherein the oxide semiconductor that is comprised as the major component of the p-type semiconductor layer comprises iridium or gallium, and

wherein a breakdown voltage of the semiconductor device is 400 V or more.

15. The semiconductor device according to claim 14 ,

wherein the n-type semiconductor layer comprises an oxide semiconductor as a major component, and

wherein the oxide semiconductor that is comprised as the major component of the n-type semiconductor layer comprises at least one metal selected from among aluminum, indium, and gallium.

16. The semiconductor device according to claim 15 ,

wherein the oxide semiconductor that is comprised as the major component of the n-type semiconductor layer comprises at least gallium.

17. The semiconductor device according to claim 14 ,

wherein the oxide semiconductor that is comprised as the major component of the p-type semiconductor layer comprises gallium.

18. A semiconductor device comprising:

an n-type semiconductor layer;

an i-type semiconductor layer; and

a p-type semiconductor layer,

wherein the i-type semiconductor layer has a first carrier concentration,

wherein the n-type semiconductor layer has a second carrier concentration that is larger than the first carrier concentration, and

wherein the p-type semiconductor layer has a third carrier concentration that is larger than the first carrier concentration,

wherein the n-type semiconductor layer comprises an oxide semiconductor as a major component,

wherein the oxide semiconductor that is comprised as the major component of the n-type semiconductor layer comprises at least one metal selected from among aluminum, indium, and gallium, and

wherein a breakdown voltage of the semiconductor device is 400 V or more.

19. The semiconductor device according to claim 18 ,

wherein the i-type semiconductor layer comprises an oxide semiconductor as a major component, and the oxide semiconductor that is comprised as the major component of the i-type semiconductor layer comprises one selected from among a corundum structure, a β-gallia structure or an ε-type structure.

20. The semiconductor device according to claim 18 ,

wherein the oxide semiconductor that is comprised as the major component of the n-type semiconductor layer comprises at least gallium.