IP Library Granted Patent US 11,239,212
Granted Patent B2
US 11,239,212 · App. 16/111,638 · Granted Feb 1, 2022

Light emitting diode array containing a black matrix and an optical bonding layer and method of making the same

Inventor: Brian Kim (Palisades Park, NJ)
Assignee: NANOSYS, INC.
H01L25/0753H01L27/1214H01L27/32H01L27/3244H01L33/483H01L33/54H01L33/58H01L33/62H01L51/5284H01L2933/005H01L2933/0058H01L2933/0066
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Quick Facts
Patent No.
US 11,239,212
App. No.
16/111,638
Granted
Feb 1, 2022
Kind
B2
Abstract

A light emitting device includes a backplane, an array of light emitting diodes attached to a front side of the backplane, a transparent conductive layer contacting front side surfaces of the light emitting diodes, an optical bonding layer located over a front side surface of the transparent conductive layer, a transparent cover plate located over a front side surface of the optical bonding layer, and a black matrix layer including an array of openings therethrough, and located between the optical bonding layer and the transparent cover plate.

Claims (18)

1. A light emitting device comprising:

a backplane;

an array of light emitting diodes attached to a front side of the backplane;

a transparent conductive layer contacting front side surfaces of the light emitting diodes;

an optical bonding layer located over a front side surface of the transparent conductive layer;

a transparent cover plate located over a front side surface of the optical bonding layer; and

a black matrix layer including an array of openings therethrough, wherein the black matrix layer is located between the optical bonding layer and the transparent cover plate,

wherein a bottom surface of the optical bonding layer forms a continuous planar interface with an upper surface of the transparent conductive layer that extends continuously over respective front side surfaces of a plurality of light emitting diodes of the array of light emitting diodes, and an upper surface of the optical bonding layer contacts a bottom surface of the black matrix layer in areas outside of the array of openings through the black matrix layer, and the upper surface of the optical bonding layer contacts a bottom surface of the transparent cover plate in areas inside the array of openings through the black matrix layer and the optical bonding layer extends continuously under the bottom surface of the black matrix layer from a first opening to a second opening of the array of openings through the black matrix layer.

2. The light emitting device of claim 1 , further comprising a dielectric matrix layer located on the front side of the backplane and laterally surrounding the array of light emitting diodes.

3. The light emitting device of claim 1 , wherein each opening in the array of openings through the black matrix layer overlies a respective light emitting diode of the array of light emitting diodes, and wherein the optical bonding layer comprises a uniform material layer that extends continuously under the bottom surface of the black matrix layer from the first opening to the second opening of the array of openings through the black matrix layer.

4. The light emitting device of claim 1 , wherein the array of openings through the black matrix layer and the array of light emitting diodes are two-dimensional periodic arrays having a same two-dimensional periodicity.

5. The light emitting device of claim 1 , wherein the black matrix layer has a transmittance at 600 nm that is less than 1% and has a reflectance at 600 nm that is less than 10%.

6. The light emitting device of claim 1 , wherein the optical bonding layer comprises a transparent silicone rubber.

7. The light emitting device of claim 1 , wherein a difference between a refractive index at 600 nm of the transparent cover plate and a refractive index of the optical bonding layer is less than 0.1.

8. The light emitting device of claim 1 , wherein the light emitting device comprises a direct view display device.

9. The light emitting device of claim 8 , wherein:

a maximum lateral dimension of light emitting diodes within the array of light emitting diodes is less than 150 microns; and

a minimum separation distance between neighboring pairs of light emitting diodes within the array of light emitting diodes is greater than the maximum lateral dimension of the light emitting diodes within the array of light emitting diodes.

Assignments (7)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 12, 2024
From: GLO TECHNOLOGIES LLC
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 068297/0220 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 6, 2023
From: SYSONAN, INC.
To: GLO TECHNOLOGIES LLC
Reel/Frame 065178/0210 →
CHANGE OF NAME Recorded Oct 5, 2023
From: NANOSYS, INC.
To: SYSONAN, INC.
Reel/Frame 065156/0416 →
TERMINATION AND RELEASE OF PATENT SECURITY AGREEMENT RECORDED AT REEL 059569 / FRAME 0840 Recorded Sep 7, 2023
From: FORTRESS CREDIT CORP.,
To: NANOSYS, INC.
Reel/Frame 064836/0263 →
SECURITY INTEREST Recorded Apr 1, 2022
From: NANOSYS, INC.
To: FORTRESS CREDIT CORP., AS AGENT
Reel/Frame 059569/0840 →
NUNC PRO TUNC ASSIGNMENT Recorded Aug 13, 2021
From: GLO AB
To: NANOSYS, INC.
Reel/Frame 057184/0564 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 14, 2018
From: KIM, BRIAN
To: GLO AB
Reel/Frame 046877/0329 →
Continuity (1)
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