Patent Assignment
Reel/Frame 068297/0220
Assignment of Assignor's Interest
Recorded: 2024-07-12
Pages: 28
Assignor
GLO TECHNOLOGIES LLC
Executed: 2024-06-11
Assignee
SAMSUNG ELECTRONICS CO., LTD.
129, SAMSUNG-RO, YEONGTONG-GU, GYEONGGI-DO, SUWON-SI, 16677, KOREA, REPUBLIC OF
Covered Properties
(111)
Light Emitting Diode Array with Inactive Implanted Isolation Regions and Methods of Forming the Same
PCT:
PCT/US2022/047797 ↗
Light Emitting Diode Array Containing Metamaterial Light Collimating Features and Methods for Forming the Same
PCT:
PCT/US2022/050604 ↗
Light Emitting Device with Improved Radiation Distribution and Method of Making Thereof
PCT:
PCT/US2022/050723 ↗
Apparatus and Method for Transferring Light-Emitting Diodes
PCT:
PCT/US2023/013511 ↗
Light Emitting Device Including Led Die Having Portions Located in Adjacent Pixels and Method of Making Same
PCT:
PCT/US2023/033836 ↗
Multicolor Light Emitting Micro Led Display and Method of Fabrication Thereof
PCT:
PCT/US2023/035742 ↗
Display Including Lateral-Structure Multicolor Light Emitting Device Pixels and Method of Fabrication Thereof
PCT:
PCT/US2023/082045 ↗
Nanostructured Led
Nanostructured Device
Nanowire Led Structure and Method for Manufacturing the Same
Coalesced Nanowire Structures with Interstitial Voids and Method for Manufacturing the Same
Patent:
8,350,249 →
Application:
13/245,405 →
Coalesced Nanowire Structures with Interstitial Voids and Method for Manufacturing the Same
Coalesced Nanowire Structures with Interstitial Voids and Method for Manufacturing the Same
Nanowire Sized Opto-Electronic Structure and Method for Manufacturing the Same
Substrate with Buffer Layer for Oriented Nanowire Growth
Nanopyramid Sized Opto-Electronic Structure and Method for Manufacturing of Same
Nanowire Sized Opto-Electronic Structure and Method for Modifying Selected Portions of Same
Nanowire Led Structure and Method for Manufacturing the Same
Nanostructured Led
Nanostructured Device
Multicolor Led and Method of Fabricating Thereof
Removal of 3D Semiconductor Structures by Dry Etching
Integrated Back Light Unit
Integrated Back Light Unit
Method of Stress Induced Cleaving of Semiconductor Devices
Nanopyramid Sized Opto-Electronic Structure and Method for Manufacturing of Same
Optical Display System
Use of Dielectric Film to Reduce Resistivity of Transparent Conductive Oxide in Nanowire Leds
Iii-Nitride Nanowire Led with Strain Modified Surface Active Region and Method of Making Thereof
Nanowire Sized Opto-Electronic Structure and Method for Manufacturing the Same
Method of Singulating Led Wafer Substrates into Dice with Led Device with Bragg Reflector
Coalesced Nanowire Structures with Interstitial Voids and Method for Manufacturing the Same
Multicolor LED and Method of Fabricating Thereof
High Index Dielectric Film to Increase Extraction Efficiency of Nanowire Leds
Nanowire Structure and Method for Manufacturing the Same
Monolithic Image Chip for Near-to-Eye Display
Nanowire Sized Opto-Electronic Structure and Method for Modifying Selected Portions of Same
Nanowire Sized Opto-Electronic Structure and Method for Modifying Selected Portions of Same
Insulating Layer for Planarization and Definition of the Active Region of a Nanowire Device
Iii-Nitride Nanowire Led with Strain Modified Surface Active Region and Method of Making Thereof
Removal of 3D Semiconductor Structures by Dry Etching
Light Bar for Back Light Unit Containing Resistance Modulated Led Strings
Laser Lift-Off on Isolated Iii-Nitride Light Islands for Inter-Substrate Led Transfer
Method of Selectively Transferring Led Die to a Backplane Using Height Controlled Bonding Structures
Monolithic Image Chip for Near-to-Eye Display
Nanostructured Led
Through Backplane Laser Irradiation for Die Transfer
Method of Forming an Array of a Multi-Device Unit Cell
Small Pitch Direct View Display and Method of Making Thereof
Pixilated Display Device Based Upon Nanowire Leds and Method for Making the Same
III-Nitride Nanowire LED with Strain Modified Surface Active Region and Method of Making Thereof
Method of Making a Light Emitting Diode Array on a Backplane
Light Emitting Diode Array on a Backplane and Method of Making Thereof
Monolithic Multicolor Direct View Display Containing Different Color Leds and Method of Making Thereof
Light Bar Containing Symmetric Led Placement and Method of Making Thereof
Selective Die Repair on a Light Emitting Device Assembly
Narrow Angle Light Engine
Self-Aligned Nanowire-Based Light Emitting Diode Subpixels for a Direct View Display and Method of Making Thereof
Multicolor Led and Method of Fabricating Thereof
Nanowire Sized Opto-Electronic Structure and Method for Modifying Selected Portions of Same
Iii-Nitride Nanowire Led with Strain Modified Surface Active Region and Method of Making Thereof
Indium Gallium Nitride Red Light Emitting Diode and Method of Making Thereof
Monolithic Image Chip for Near-to-Eye Display
Micro-Lensed Light Emitting Device
Semiconductor Light Emitting Device Including Cap Structure and Method of Making Same
Iii-Nitride Nanowire Led with Strain Modified Surface Active Region and Method of Making Thereof
Method of Forming an Array of a Multi-Device Unit Cell
Light Emitting Diodes with Integrated Reflector for a Direct View Display and Method of Making Thereof
Laser Lift-Off on Isolated Iii-Nitride Light Islands for Inter-Substrate Led Transfer
Light Emitting Diode Array Containing a Multilayer Bus Electrode and Method of Making the Same
Led Backplane Having Planar Bonding Surfaces and Method of Making Thereof
Method of Making a Semiconductor Device Using Nano-Imprint Lithography for Formation of a Selective Growth Mask
Light Emitting Diode Array Containing a Black Matrix and an Optical Bonding Layer and Method of Making the Same
Etendue Enhancement for Light Emitting Diode Subpixels
Light Emitting Diode Containing Oxidized Metal Contacts
Through Backplane Laser Irradiation for Die Transfer
Display Device Including NANOSTRUCTURED LEDs Connected in Parallel
Pixel Repair Method for a Direct View Display Device
Subpixel Light Emitting Diodes for Direct View Display and Methods of Making the Same
Epitaxial Gallium Nitride Based Light Emitting Diode and Method of Making Thereof
Light Emitting Diodes Formed on Nanodisk Substrates and Methods of Making the Same
Indium Gallium Nitride Red Light Emitting Diode and Method of Making Thereof
Light Emitting Diodes with Integrated Reflector for a Direct View Display and Method of Making Thereof
Light Emitting Diodes Containing Deactivated Regions and Methods of Making the Same
Indium Gallium Nitride Red Light Emitting Diode and Method of Making Thereof
Light Emitting Diode Containing Oxidized Metal Contacts
Light Emitting Diode Device Containing a Micro Lens Array and Method of Making the Same
White Light Emitting Diode (Led) and Method of Repairing Light Emitting Device Using Same
Light Emitting Diode Device Containing a Positive Photoresist Insulating Spacer and a Conductive Sidewall Contact and Method of Making the Same
Vertical Stacks of Light Emitting Diodes and Control Transistors and Method of Making Thereof
Epitaxial Gallium Nitride Based Light Emitting Diode and Method of Making Thereof
Indium Gallium Nitride Red Light Emitting Diode and Method of Making Thereof
Light Emitting Diode Containing Oxidized Metal Contacts
Partial Laser Liftoff Process During Die Transfer and Structures Formed by the Same
Light Emitting Diode Containing a Grating and Methods of Making the Same
Light Emitting Diode Containing Pinhole Masking Layer and Method of Making Thereof
Application:
17/176,857 →
Publication:
US 2021/0257510
Semiconductor Device Containing Stress Relaxation Layer and Method of Making Thereof
Subpixel Light Emitting Diodes for Direct View Display and Methods of Making the Same
Light-Emitting Diode Device Containing Microlenses and Method of Making the Same
Light Emitting Diode Array Containing a Black Matrix and an Optical Bonding Layer and Method of Making the Same
Light Emitting Diodes Containing Deactivated Regions and Methods of Making the Same
Apparatus and Method for Transferring Light-Emitting Diodes
Light Emitting Diode with Conductive Encapsulation and Method of Making Thereof
Light Emitting Diode Device Containing a Positive Photoresist Insulating Spacer and a Conductive Sidewall Contact and Method of Making the Same
Light Emitting Diodes with Lattice Matching Sidewall Passivation Layer and Method of Making Thereof
Application:
17/937,878 →
Publication:
US 2023/0113198
Light Emitting Diode Array with Inactive Implanted Isolation Regions and Methods of Forming the Same
Application:
18/049,667 →
Publication:
US 2023/0132423
Light Emitting Diode Array Containing Metamaterial Light Collimating Features and Methods for Forming the Same
Light Emitting Device with Improved Radiation Distribution and Method of Making Thereof
Application:
18/057,914 →
Publication:
US 2023/0378404
Indium Gallium Nitride Red Light Emitting Diode and Method of Making Thereof
Light Emitting Diodes Containing Deactivated Regions and Methods of Making the Same
Subpixel Light Emitting Diodes for Direct View Display and Methods of Making the Same
Related Assignments
(20)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Nov 28, 2012
From: SVENSSON, PATRIK; ROMANO, LINDA; YI, SUNGSOO; KRYLIOUK, OLGA
To: GLO AB
Reel/Frame 029365/0453 →
Assignment of Assignor's Interest
Jan 24, 2013
From: OHLSSON, JONAS
To: GLO AB
Reel/Frame 029686/0921 →
Assignment of Assignor's Interest
Nov 26, 2013
From: KRYLIOUK, OLGA; GARDNER, NATHAN; VESCOVI, GIULIANO PORTILHO
To: GLO AB
Reel/Frame 031682/0034 →
Assignment of Assignor's Interest
Jun 30, 2014
From: OHLSSON, JONAS; SVENSSON, CARL PATRIK THEODOR
To: GLO AB
Reel/Frame 033207/0554 →
Assignment of Assignor's Interest
Jun 25, 2015
From: SVENSSON, CARL PATRIK THEODOR; GARDNER, NATHAN
To: GLO AB
Reel/Frame 035905/0994 →
Assignment of Assignor's Interest
Jan 2, 2018
From: JANSEN, MICHAEL; WANG, SHENG-MIN; HUANG, HUI-YU
To: GLO AB
Reel/Frame 044514/0763 →
Assignment of Ip Security Agreement
Dec 12, 2018
From: GLO AB
To: HERCULES CAPITAL, INC., AS ADMINISTRATIVE AGENT
Reel/Frame 049042/0527 →
Security Interest
Jan 23, 2019
From: GLO AB
To: HERCULES CAPITAL INC.
Reel/Frame 048110/0063 →
Release of Security Interest
Apr 12, 2021
From: HERCULES CAPITAL, INC.
To: GLO AB
Reel/Frame 057210/0690 →
Nunc Pro Tunc Assignment
Aug 13, 2021
From: GLO AB
To: NANOSYS, INC.
Reel/Frame 057184/0564 →
Security Interest
Apr 1, 2022
From: NANOSYS, INC.
To: FORTRESS CREDIT CORP., AS AGENT
Reel/Frame 059569/0840 →
Assignment of Assignor's Interest
Nov 23, 2022
From: ANTONIADIS, HOMER
To: NANOSYS, INC.,
Reel/Frame 061862/0240 →
Assignment of Assignor's Interest
Dec 15, 2022
From: KIM, BRIAN
To: NANOSYS, INC.,
Reel/Frame 062108/0910 →
Assignment of Assignor's Interest
Dec 16, 2022
From: ANTONIADIS, HOMER
To: NANOSYS, INC.,
Reel/Frame 062127/0313 →
Assignment of Assignor's Interest
Dec 16, 2022
From: CHEN, ZHEN; CHADDA, SAKET; YAN, SHUKE
To: NANOSYS, INC.,
Reel/Frame 062127/0175 →
Assignment of Assignor's Interest
Mar 23, 2023
From: HUANG, IVAN; STRASILLA, ERIC; REED, ANSEL
To: NANOSYS, INC.
Reel/Frame 063068/0769 →
Assignment of Assignor's Interest
Aug 17, 2023
From: KIM, BRIAN
To: NANOSYS, INC.
Reel/Frame 064623/0970 →
Termination and Release of Patent Security Agreement Recorded at Reel 059569 / Frame 0840
Sep 7, 2023
From: FORTRESS CREDIT CORP.,
To: NANOSYS, INC.
Reel/Frame 064836/0263 →
Change of Name
Oct 5, 2023
From: NANOSYS, INC.
To: SYSONAN, INC.
Reel/Frame 065156/0416 →
Assignment of Assignor's Interest
Oct 6, 2023
From: SYSONAN, INC.
To: GLO TECHNOLOGIES LLC
Reel/Frame 065178/0210 →