Patent Assignment
Reel/Frame 048110/0063
Security Interest
Recorded: 2019-01-23
Pages: 23
Assignor
GLO AB
Executed: 2018-01-08
Assignee
HERCULES CAPITAL INC.
400 HAMILTON AVENUE, SUITE 310, PALO ALTO, CALIFORNIA, 94301
Covered Properties
(94)
Laser Lift-Off on Isolated Iii-Nitride Light Islands for Inter-Substrate Led Transfer
PCT:
PCT/US2016/059736 ↗
Integrated Back Light Unit
PCT:
PCT/US2016/062248 ↗
Integrated Back Light Unit with Remote Phosphor
PCT:
PCT/US2016/062251 ↗
Method of Selectively Transferring Led Die to a Backplane Using Height Controlled Bonding Structures
PCT:
PCT/US2017/017830 ↗
Method of Forming an Array of a Multi-Device Unit Cell
PCT:
PCT/US2017/027125 ↗
Small Pitch Direct View Display and Method of Making Thereof
PCT:
PCT/US2017/028771 ↗
Monolithic Multicolor Direct View Display Containing Different Color Leds and Method of Making Thereof
PCT:
PCT/US2017/030758 ↗
Selective Die Repair on a Light Emitting Device Assembly
PCT:
PCT/US2017/033032 ↗
Indium Gallium Nitride Red Light Emitting Diode and Method of Making Thereof
PCT:
PCT/US2017/057099 ↗
Nanostructured Led
Nanostructured Device
Nanowire Led Structure and Method for Manufacturing the Same
Coalesced Nanowire Structures with Interstitial Voids and Method for Manufacturing the Same
Patent:
8,350,249 →
Application:
13/245,405 →
Coalesced Nanowire Structures with Interstitial Voids and Method for Manufacturing the Same
Coalesced Nanowire Structures with Interstitial Voids and Method for Manufacturing the Same
Nanowire Sized Opto-Electronic Structure and Method for Manufacturing the Same
Substrate with Buffer Layer for Oriented Nanowire Growth
Methods for Image Processing of Face Regions and Electronic Devices Using the Same
Nanopyramid Sized Opto-Electronic Structure and Method for Manufacturing of Same
Method of Making Molded LED Package
Packaged Led Device with Castellations
Nanowire Led Structure and Method for Manufacturing the Same
Nanowire Sized Opto-Electronic Structure and Method for Modifying Selected Portions of Same
Nanowire Sized Opto-Electronic Structure and Method for Modifying Selected Portions of Same
Nanowire Led Structure and Method for Manufacturing the Same
Nanostructured Led
Nanostructured Device
Multicolor Led and Method of Fabricating Thereof
Nanowire Led Structure with Decreased Leakage and Method of Making Same
Nanowire LED Structure with Decreased Leakage and Method of Making Same
Insulating Layer for Planarization and Definition of the Active Region of a Nanowire Device
Removal of 3D Semiconductor Structures by Dry Etching
Molded Led Package and Method of Making Same
Integrated Back Light Unit
Integrated Back Light Unit
Methods of Locating Differently Shaped or Differently Sized Led Die in a Submount
Application:
14/549,826 →
Publication:
US 2015/0179894
Led Submount with Integrated Interconnects
Method of Stress Induced Cleaving of Semiconductor Devices
Nanopyramid Sized Opto-Electronic Structure and Method for Manufacturing of Same
Optical Display System
Use of Dielectric Film to Reduce Resistivity of Transparent Conductive Oxide in Nanowire Leds
Iii-Nitride Nanowire Led with Strain Modified Surface Active Region and Method of Making Thereof
Nanowire Sized Opto-Electronic Structure and Method for Manufacturing the Same
Method of Singulating Led Wafer Substrates into Dice with Led Device with Bragg Reflector
Coalesced Nanowire Structures with Interstitial Voids and Method for Manufacturing the Same
Multicolor LED and Method of Fabricating Thereof
Nanowire Led Structure and Method for Manufacturing the Same
High Index Dielectric Film to Increase Extraction Efficiency of Nanowire Leds
Nanowire Structure and Method for Manufacturing the Same
Monolithic Image Chip for Near-to-Eye Display
Nanowire Sized Opto-Electronic Structure and Method for Modifying Selected Portions of Same
Nanowire Sized Opto-Electronic Structure and Method for Modifying Selected Portions of Same
Insulating Layer for Planarization and Definition of the Active Region of a Nanowire Device
Nanowire LED Structure and Method for Manufacturing the Same
Application:
14/973,394 →
Publication:
US 2016/0211406
Iii-Nitride Nanowire Led with Strain Modified Surface Active Region and Method of Making Thereof
Removal of 3D Semiconductor Structures by Dry Etching
Light Bar for Back Light Unit Containing Resistance Modulated Led Strings
Laser Lift-Off on Isolated Iii-Nitride Light Islands for Inter-Substrate Led Transfer
Integrated Back Light Unit
Application:
15/353,050 →
Publication:
US 2017/0068038
Integrated Back Light Unit with Remote Phosphor
Application:
15/353,100 →
Publication:
US 2017/0139105
Led Backlight Unit with Separately and Independently Dimmable Zones for a Liquid Crystal Display
Application:
15/429,338 →
Publication:
US 2017/0227816
Coalesced Nanowire Structures with Interstitial Voids and Method for Manufacturing the Same
Application:
15/429,813 →
Publication:
US 2017/0170261
Method of Selectively Transferring Led Die to a Backplane Using Height Controlled Bonding Structures
Method to Improve Adhesion of Photoresist on Silicon Substrate for Extreme Ultraviolet and Electron Beam Lithography
Monolithic Image Chip for Near-to-Eye Display
Nanostructured Led
Through Backplane Laser Irradiation for Die Transfer
Red Light Emitting Diodes Having an Indium Gallium Nitride Template Layer and Method of Making Thereof
Application:
15/464,641 →
Publication:
US 2018/0277713
Method of Forming an Array of a Multi-Device Unit Cell
Small Pitch Direct View Display and Method of Making Thereof
Pixilated Display Device Based Upon Nanowire Leds and Method for Making the Same
III-Nitride Nanowire LED with Strain Modified Surface Active Region and Method of Making Thereof
Integrated Back Light Unit Including Non-Uniform Light Guide Unit
Application:
15/502,988 →
Publication:
US 2017/0235039
Method of Making a Light Emitting Diode Array on a Backplane
Light Emitting Diode Array on a Backplane and Method of Making Thereof
Monolithic Multicolor Direct View Display Containing Different Color Leds and Method of Making Thereof
Light Bar Containing Symmetric Led Placement and Method of Making Thereof
Selective Die Repair on a Light Emitting Device Assembly
Narrow Angle Light Engine
Self-Aligned Nanowire-Based Light Emitting Diode Subpixels for a Direct View Display and Method of Making Thereof
Multicolor Led and Method of Fabricating Thereof
Nanowire Sized Opto-Electronic Structure and Method for Modifying Selected Portions of Same
Molded Led Package with Laminated Leadframe and Method of Making Thereof
Application:
15/641,866 →
Publication:
US 2018/0012872
Iii-Nitride Nanowire Led with Strain Modified Surface Active Region and Method of Making Thereof
Indium Gallium Nitride Red Light Emitting Diode and Method of Making Thereof
Monolithic Image Chip for Near-to-Eye Display
Micro-Lensed Light Emitting Device
Semiconductor Light Emitting Device Including Cap Structure and Method of Making Same
Micro-Lensed Light Emitting Device
Application:
62/437,260 →
Semiconductor Light Emitting Device Including Reflective Element and Method of Making Same
Application:
62/443,953 →
Light Emitting Diodes with Integrated Reflector for a Direct View Display and Method of Making Thereof
Application:
62/444,010 →
Method of Making a Semiconductor Device Using Nano-Imprint Lithography for Formation of a Selective Growth Mask
Application:
62/545,787 →
Selective Area Growth of Light Emitting Diode Subpixels
Application:
62/559,375 →
Light Emitting Diode Containing Oxidized Metal Contacts
Application:
62/569,256 →
Related Assignments
(18)
Other recorded transfers of the patents in this record — the chain of ownership.
Assignment of Assignor's Interest
Nov 28, 2012
From: SVENSSON, PATRIK; ROMANO, LINDA; YI, SUNGSOO; KRYLIOUK, OLGA
To: GLO AB
Reel/Frame 029365/0453 →
Assignment of Assignor's Interest
Jan 24, 2013
From: OHLSSON, JONAS
To: GLO AB
Reel/Frame 029686/0921 →
Assignment of Assignor's Interest
Aug 26, 2013
From: LIN, CHING-FU; TAI, POL-LIN; LEE, HUAI-CHE; WU, JING-LUNG
To: HTC CORPORATION
Reel/Frame 031082/0514 →
Assignment of Assignor's Interest
Sep 19, 2013
From: HARVEY, DOUGLAS; KANESHIRO, RONALD
To: GLO AB
Reel/Frame 031243/0004 →
Assignment of Assignor's Interest
Sep 19, 2013
From: HARVEY, DOUGLAS; KANESHIRO, RONALD
To: GLO AB
Reel/Frame 031243/0328 →
Assignment of Assignor's Interest
Nov 26, 2013
From: KRYLIOUK, OLGA; GARDNER, NATHAN; VESCOVI, GIULIANO PORTILHO
To: GLO AB
Reel/Frame 031682/0034 →
Assignment of Assignor's Interest
Sep 4, 2014
From: HERNER, SCOTT BRAD
To: GLO AB
Reel/Frame 033670/0718 →
Assignment of Assignor's Interest
Sep 29, 2015
From: HERNER, SCOTT BRAD; THOMPSON, DANIEL BRYCE; LEMAY, CYNTHIA
To: GLO AB
Reel/Frame 036681/0882 →
Assignment of Assignor's Interest
Oct 24, 2018
From: DANESH, FARIBA; SCHNEIDER, JR., RICHARD P.; REN, FAN; JANSEN, MICHAEL
To: GLO AB
Reel/Frame 047293/0302 →
Assignment of Ip Security Agreement
Dec 12, 2018
From: GLO AB
To: HERCULES CAPITAL, INC., AS ADMINISTRATIVE AGENT
Reel/Frame 049042/0527 →
Release of Security Interest
Apr 12, 2021
From: HERCULES CAPITAL, INC.
To: GLO AB
Reel/Frame 057210/0690 →
Nunc Pro Tunc Assignment
Aug 13, 2021
From: GLO AB
To: NANOSYS, INC.
Reel/Frame 057184/0564 →
Security Interest
Apr 1, 2022
From: NANOSYS, INC.
To: FORTRESS CREDIT CORP., AS AGENT
Reel/Frame 059569/0840 →
Assignment of Assignor's Interest
Jul 15, 2023
From: DANESH, FARIBA; SCHNEIDER, RICHARD P.; REN, FAN; JANSEN, MICHAEL
To: NANOSYS, INC.
Reel/Frame 064275/0532 →
Termination and Release of Patent Security Agreement Recorded at Reel 059569 / Frame 0840
Sep 7, 2023
From: FORTRESS CREDIT CORP.,
To: NANOSYS, INC.
Reel/Frame 064836/0263 →
Change of Name
Oct 5, 2023
From: NANOSYS, INC.
To: SYSONAN, INC.
Reel/Frame 065156/0416 →
Assignment of Assignor's Interest
Oct 6, 2023
From: SYSONAN, INC.
To: GLO TECHNOLOGIES LLC
Reel/Frame 065178/0210 →
Assignment of Assignor's Interest
Jul 12, 2024
From: GLO TECHNOLOGIES LLC
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 068297/0220 →