IP Library Granted Patent US 9,978,808
Granted Patent B2
US 9,978,808 · App. 15/585,420 · Granted May 22, 2018

Monolithic multicolor direct view display containing different color LEDs and method of making thereof

Inventors: Richard P. Schneider, Jr. (Albuquerque, NM); Benjamin Leung (Sunnyvale, CA)
Assignee: GLO AB
H01L27/156H01L33/0075H01L33/24H01L33/32H01L33/04H01L33/502
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Quick Facts
Patent No.
US 9,978,808
App. No.
15/585,420
Granted
May 22, 2018
Kind
B2
Abstract

A direct view multicolor light emitting device includes blue, green and red light emitting diodes (LEDs) in each pixel. The different light emitting diodes can be formed by depositing different types of active region layers in a stack such that deposition area of each subsequent active region is less than the deposition area of any preceding active region, and by patterning the active region layers into different types of stacks. The active region layers may be formed as planar layers, or may be formed on semiconductor nanowires. The active region layers can emit light at the respective target wavelength range. Alternatively, at least one of green and red phosphor materials, dye materials, or quantum dots may be used instead of or in addition to the active regions that emit light at a wavelength different from a target wavelength of a respective LED.

Claims (21)

1. A light emitting device, comprising:

a plurality of blue, green and red light emitting diodes (LEDs), wherein each of the plurality of blue, green and red LEDs comprises at least one semiconductor region of a first conductivity type and at least one semiconductor region of a second conductivity type;

wherein:

the blue LEDs further comprise a blue active region located between the least one semiconductor region of the first conductivity type and at least one semiconductor region of the second conductivity type;

the green LEDs further comprise the blue active region and a green active region located between the least one semiconductor region of the first conductivity type and at least one semiconductor region of the second conductivity type; and

the red LEDs further comprise the blue active region, a green active region and a red active region located between the least one semiconductor region of the first conductivity type and at least one semiconductor region of the second conductivity type.

2. The device of claim 1 , wherein:

the green active region and the red active region each have a thickness of 1 to 100 nm; and

the device comprises a direct view multicolor light emitting device that contains the blue LED, the green LED and the red LEDs in each pixel.

3. The device of claim 1 , wherein:

the at least one semiconductor region of the first conductivity type comprises a plurality of semiconductor nanowires of the first conductivity type;

the blue, green and red active regions comprise shells located over the plurality of semiconductor nanowires; and

the at least one semiconductor region of the second conductivity type comprises outer shells of the second conductivity type located around the blue, green and red active regions and the plurality of semiconductor nanowires.

4. The device of claim 1 , wherein:

the at least one semiconductor region of the first conductivity type comprises a planar semiconductor layer of the first conductivity type;

the blue, green and red active regions comprise layers located over the planar semiconductor layer of the first conductivity type; and

the at least one semiconductor region of the second conductivity type comprises a at least one planar semiconductor layer of the second conductivity type located over the layers which comprise the blue, green and red active regions.

5. A light emitting device, comprising:

a first light emitting diode including a first stack containing a first-type active region, and configured to emit light at a first peak wavelength;

a second light emitting diode including a second stack including the first-type active region and a second-type active region having a different composition than the first-type active region, and configured to emit light at a second wavelength that is different from the first wavelength; and

a third light emitting diode including a third stack containing the first-type active region, the second-type active region and a third-type active region having a different composition from the first and second-type active regions, and configured to emit light at a third wavelength that is different from the first and second wavelengths.

Assignments (11)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 12, 2024
From: GLO TECHNOLOGIES LLC
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 068297/0220 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 6, 2023
From: SYSONAN, INC.
To: GLO TECHNOLOGIES LLC
Reel/Frame 065178/0210 →
CHANGE OF NAME Recorded Oct 5, 2023
From: NANOSYS, INC.
To: SYSONAN, INC.
Reel/Frame 065156/0416 →
TERMINATION AND RELEASE OF PATENT SECURITY AGREEMENT RECORDED AT REEL 059569 / FRAME 0840 Recorded Sep 7, 2023
From: FORTRESS CREDIT CORP.,
To: NANOSYS, INC.
Reel/Frame 064836/0263 →
SECURITY INTEREST Recorded Apr 1, 2022
From: NANOSYS, INC.
To: FORTRESS CREDIT CORP., AS AGENT
Reel/Frame 059569/0840 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 22, 2022
From: SCHNEIDER, RICHARD P., JR.
To: GLO AB
Reel/Frame 059341/0865 →
NUNC PRO TUNC ASSIGNMENT Recorded Aug 13, 2021
From: GLO AB
To: NANOSYS, INC.
Reel/Frame 057184/0564 →
RELEASE OF SECURITY INTEREST Recorded Apr 12, 2021
From: HERCULES CAPITAL, INC.
To: GLO AB
Reel/Frame 057210/0690 →
SECURITY INTEREST Recorded Jan 23, 2019
From: GLO AB
To: HERCULES CAPITAL INC.
Reel/Frame 048110/0063 →
ASSIGNMENT OF IP SECURITY AGREEMENT Recorded Dec 12, 2018
From: GLO AB
To: HERCULES CAPITAL, INC., AS ADMINISTRATIVE AGENT
Reel/Frame 049042/0527 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 24, 2018
From: LEUNG, BENJAMIN
To: GLO AB
Reel/Frame 047297/0011 →
Continuity (3)
Provisional Application 62331859 · May 4, 2016
Provisional Application 62464504 · Feb 28, 2017
Related Publication 20170323925A1 · Nov 9, 2017