Coalesced nanowire structures with interstitial voids and method for manufacturing the same
View Patent ↗A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second conductivity type semiconductor layer extending over and around the cores, a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores, and first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids.
1. A semiconductor device, comprising:
a plurality of first conductivity type semiconductor nanowire cores located over a support;
a continuous second conductivity type semiconductor layer extending over and around the cores;
a plurality of interstitial voids located in the second conductivity type semiconductor layer and extending between the cores;
a first electrode layer that contacts the second conductivity type semiconductor layer and extends into the interstitial voids; and
at least one quantum well shell located around the cores and surrounded by a first portion of the second conductivity type semiconductor layer which completely fills interstitial spaces between the cores and by a second portion of the second conductivity type semiconductor layer which does not completely fill the interstitial spaces to leave the interstitial voids in the interstitial spaces;
wherein the cores are positioned such that a non-tessellated configuration is provided as the second conductivity type semiconductor layer extends around the cores to form the interstitial voids.
2. The device of claim 1 , wherein the device comprises a light emitting diode (LED) device.
3. The device of claim 2 , wherein the second conductivity type semiconductor layer directly physically contacts the cores to form a light emitting p-n junction at each core.
4. The device claim 2 , wherein the support comprises a semiconductor substrate.
5. The device claim 2 , wherein the first electrode layer is transparent.
6. The device of claim 2 , wherein the cores comprise semiconductor nanowires epitaxially extending from portions of a semiconductor surface of the support exposed through openings in an insulating mask layer located on the support.
7. The device of claim 1 , wherein an active region shell comprises the at least one quantum well and the second conductivity type semiconductor layer directly physically contacts the at least one quantum well shell to form a light emitting p-i-n junction at each nanowire core surrounded by the at least one quantum well shell.
8. The device of claim 7 , wherein the first conductivity type comprises n-type, the second conductivity type comprises p-type and the first electrode layer comprises a p-electrode layer.
9. The device of claim 8 , further comprising a second electrode layer which electrically connects to the n-type nanowire cores.
10. The device of claim 8 , wherein the support comprises an n-type semiconductor buffer layer on a substrate.
11. The device of claim 10 , wherein the substrate comprises an n-Si substrate, the buffer layer comprises an n-GaN or n-AlGaN layer, the cores comprise n-GaN nanowires epitaxially extending from portions of the buffer layer surface exposed through openings in an insulating mask layer on the buffer layer, the at least one quantum well comprises an InGaN quantum well, and the second conductivity type semiconductor layer comprises a p-GaN layer.
12. The device of claim 1 , wherein the second conductivity type semiconductor layer is substantially planar.
13. The device of claim 1 , wherein the first electrode layer partially or fully fills the interstitial voids to contact the second portion of the second conductivity type semiconductor layer.
14. The device of claim 13 , wherein the first electrode layer partially fills the interstitial voids such that an air-bridged electrode configuration is formed.