Removal of 3D semiconductor structures by dry etching
View Patent ↗Various embodiments include methods of fabricating a semiconductor device that include providing a plurality of nanostructures extending away from a support, forming a flowable material layer between the nanostructures, forming a patterned mask over a first portion of the flowable material and the first portion of the plurality of nanostructures, such that a second portion of the flowable material and a second portion of the plurality of nanostructures are not located under the patterned mask and etching the second portion of the flowable material and the second portion of the plurality of nanostructures to remove the second portion of the flowable material and the second portion of the plurality of nanostructures to leave the first portion of the flowable material and the first portion of the plurality of nanostructures unetched.
1. An etching method comprising:
providing a plurality of nanostructures extending away from a support;
forming a flowable material layer between the nanostructures;
forming a patterned mask over a first portion of the flowable material and the first portion of the plurality of nanostructures, such that a second portion of the flowable material and a second portion of the plurality of nanostructures are not located under the patterned mask;
etching the second portion of the flowable material and the second portion of the plurality of nanostructures to remove the second portion of the flowable material and the second portion of the plurality of nanostructures to leave the first portion of the flowable material and the first portion of the plurality of nanostructures unetched; wherein:
(i) the flowable material layer comprises a photoresist layer and forming the patterned mask comprises exposingonly an upper portion of the photoresist layer through a photolithography mask with radiation and removing parts of an upper portion of the photoresist overlying the second portion of the flowable material layer; or
(ii) forming the patterned mask comprises patterning the flowable material layer and subsequently depositing a photoresist layer over the patterned flowable material layer; or
(iii) the step of etching comprises etching the patterned mask, the second portion of the flowable material and the second portion of the plurality of nanostructures to remove at least a portion of the patterned mask, the second portion of the flowable material and the second portion of the plurality of nanostructures to leave the first portion of the flowable material and the first portion of the plurality of nanostructures unetched.
2. The method of claim 1 , further comprising selectively removing at least a part of the first portion of the flowable material after the step of etching to leave the first portion of the plurality of nanostructures over a support.
3. The method of claim 1 , wherein the nanostructures comprise semiconductor nanowires.
4. The method of claim 1 , wherein the flowable material layer comprises the photoresist layer and forming the patterned mask comprises exposing only the upper portion of the photoresist layer through the photolithography mask with radiation and removing parts of the upper portion of the photoresist overlying the second portion of the flowable material layer.
5. The method of claim 1 , wherein forming the patterned mask comprises depositing a photoresist layer over the flowable material layer and pattering the photoresist.
6. The method of claim 1 , wherein forming the patterned mask comprises patterning the flowable material layer and subsequently depositing the photoresist layer over the patterned flowable material layer.
7. The method of claim 1 , wherein the step of etching comprises etching the patterned mask, the second portion of the flowable material and the second portion of the plurality of nanostructures to remove at least a portion of the patterned mask, the second portion of the flowable material and the second portion of the plurality of nanostructures to leave the first portion of the flowable material and the first portion of the plurality of nanostructures unetched.
8. An etching method comprising:
providing a plurality of nanostructures extending away from a support;
forming a flowable material layer between the nanostructures;
forming a patterned mask over a first portion of the flowable material and the first portion of the plurality of nanostructures, such that a second portion of the flowable material and a second portion of the plurality of nanostructures are not located under the patterned mask;
etching the second portion of the flowable material and the second portion of the plurality of nanostructures to remove the second portion of the flowable material and the second portion of the plurality of nanostructures to leave the first portion of the flowable material and the first portion of the plurality of nanostructures unetched; and
selectively removing the patterned mask and at least a part of the first portion of the flowable material after the step of etching to leave the first portion of the plurality of nanostructures over a support,
wherein the step of etching comprises etching the second portion of the flowable material and the second portion of the plurality of nanostructures to remove the second portion of the flowable material and the second portion of the plurality of nanostructures to leave the patterned mask, the first portion of the flowable material and the first portion of the plurality of nanostructures unetched.
9. The method of claim 1 , further comprising etching the first portion of the flowable material to reduce a height of the first portion of the flowable material between the first portion of the plurality of nanostructures.
10. The method of claim 1 , wherein the flowable material comprises a spin on glass or a photoresist.
11. An etching method comprising:
providing a plurality of nanostructures extending away from a support;
forming a flowable material layer between the nanostructures;
forming a patterned mask over a first portion of the flowable material and the first portion of the plurality of nanostructures, such that a second portion of the flowable material and a second portion of the plurality of nanostructures are not located under the patterned mask;
etching the second portion of the flowable material and the second portion of the plurality of nanostructures to remove the second portion of the flowable material and the second portion of the plurality of nanostructures to leave the first portion of the flowable material and the first portion of the plurality of nanostructures unetched; and
forming an insulating material layer over at least a portion of the plurality of nanowires such that at least a portion of the insulating material layer provides a substantially planar top surface; and
forming an electrical contact over the substantially planar top surface of the insulating material layer.
12. The method of claim 11 , further comprising forming a second electrical contact over the support in an area where the etched second portion of the flowable material and the etched second portion of the plurality of nanostructures were removed.
13. The method of claim 11 , wherein the nanostructures comprise nanowire LEDs.
14. The method of claim 1 , wherein etching comprises dry etching.