White light emitting diode (LED) and method of repairing light emitting device using same
A white LED and a method of repairing a light emitting device including, the method including colored light emitting diodes (LEDs) configured to emit different colors of light and arranged in pixels on a backplane of the device, the method including: determining whether each pixel is a functional pixel or a defective pixel; and repairing the defective pixels by transferring white LEDs to the backplane in each defective pixel.
1. A light emitting diode (LED) array, comprising:
a carrier substrate;
an array of the red, green and blue LEDs positioned on the carrier substrate;
a plurality of white repair LEDs positioned on the carrier substrate in vacancy sites in the array of the red, green and blue LEDs,
wherein each of the white repair LEDs comprises:
a substrate;
n-doped compound semiconductor material layer disposed on the substrate,
a p-doped compound semiconductor material layer disposed on the substrate; and
an active region disposed between the n-doped and p-doped compound semiconductor layers, the active region comprising quantum wells configured to respectively emit at least one of red, green, or blue light,
wherein the white repair LED does not comprise a color conversion material.
2. A direct view display device comprising the carrier substrate and the white repair LED of claim 1 , wherein the white repair LED is located in a vacancy site on the carrier substrate which comprises a backplane of the direct view display device.
3. The LED array of claim 1 , wherein the active region comprises:
a red emission region comprising at least one quantum well configured to emit red light;
a blue emission region comprising at least one quantum well configured to emit blue light; and
a green emission region comprising at least one quantum well configured to emit green light.
4. The LED array of claim 3 , wherein the red, green, and blue emission regions completely overlap one another with respect to a direction perpendicular to a plane of the substrate.
5. The LED array of claim 3 , wherein the green emission region is disposed on the substrate between the red emission region and the blue emission region.
6. The LED array of claim 3 , wherein:
the at least one quantum well of the red emission region comprises indium gallium nitride containing a first amount of indium;
the at least one quantum well of the green emission region comprises indium gallium nitride containing a second amount of indium;
the at least one quantum well of the blue emission region comprises indium gallium nitride containing a third amount of indium;
the first amount of indium is greater than the second amount of indium; and
the second amount of indium is greater than the third amount of indium.
7. The LED array of claim 6 , wherein the indium is in the form of quantum dots.
8. The LED array of claim 7 , wherein the quantum dots are formed by indium segregation.
9. The LED array of claim 5 , wherein the at least one quantum well configured to emit red light contains a dopant.