Display device including nanostructured LEDs connected in parallel
The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n-junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.
1. A light emitting diode (LED) display device comprising:
LED die comprising red LEDs, green LEDs, and blue LEDs each comprising a respective GaN buffer layer, and that each comprise pixels of a red-green-blue display device; and
a sub-mount comprising transistors for driving the pixels and contact pads attached to p-contact pads and n-contact pads of the LED die,
wherein:
the red LEDs are configured to emit red light through the buffer layer upon application of voltage thereto, the red LEDs comprise a gallium nitride or an indium gallium nitride layer;
the green LEDs are configured to emit green light through the buffer layer upon application of voltage thereto;
the blue LEDs are configured to emit blue light through the buffer layer upon application of voltage thereto;
the red LEDs, the green LEDs and the blue LEDs comprise a semiconductor material core of a first conductivity type, a semiconductor material active region located radially outward of the semiconductor material core, and a semiconductor material shell of a second conductivity type located radially outward of the semiconductor material active region; and
the red LEDs, the green LEDs and the blue LEDs comprise a plurality of contact groups of red LEDs, green LEDs and blue LEDs, respectively, wherein each of the red LEDs, the green LEDs and the blue LEDs within a contact group are electrically connected in parallel, and the plurality of contact groups of red LEDs, green LEDs and blue LEDs are arranged in a two-dimensional array on the sub-mount and each contact group of red LEDs, green LEDs and blue LEDs is individually and exclusively addressable based on a column and row location of the respective contact group within the two-dimensional array.
2. The LED display device of claim 1 , wherein the red LEDs, the green LEDs and the blue LEDs comprise nanowires.
3. The LED display of claim 2 , further comprising an electrically conductive material that extends down the sidewalls of at least a portion of the nanowires of the red LEDs, the green LEDs and the blue LEDs.
4. The LED display device of claim 1 , wherein the red LEDs, the green LEDs and the blue LEDs comprise pn or p-i-n junctions.
5. The LED display device of claim 1 , wherein the gallium nitride or the indium gallium nitride layer in the red LEDs comprises the GaN buffer layer.
6. The LED display device of claim 1 , wherein the red LEDs comprise an active layer which is the indium gallium nitride layer.
7. The LED display device of claim 1 , further comprising a transparent contact layer or a light-reflecting layer covering at least a portion of the red LEDs, the green LEDs and the blue LEDs.
8. The LED display device of claim 1 , wherein each of the red LEDs, the green LEDs and the blue LEDs within the contact group are electrically connected in parallel via a first contact pad to a same row line and a same column line, and are electrically connected via a second contact pad to a common contact of a plurality of contact groups.