Light emitting diode with conductive encapsulation and method of making thereof
A light emitting device includes a backplane, an array of light emitting diodes attached to a front side of the backplane, such that each of the light emitting diodes includes a stack of a first doped semiconductor layer, a second doped semiconductor layer and an active region located between the first and the second doped semiconductor layers, and a conductive encapsulation layer in contact with sidewalls of the first doped semiconductor layers of the array of light emitting diodes.
1. A light emitting device, comprising:
a backplane;
an array of light emitting diodes attached to a front side of the backplane, wherein each of the array of light emitting diodes comprises a stack of a first doped semiconductor layer, a second doped semiconductor layer, and an active region located between the first and the second doped semiconductor layers; and
a conductive encapsulation layer in contact with sidewalls of the first doped semiconductor layers of the array of light emitting diodes,
wherein the conductive encapsulation layer comprises a polymer material, and
wherein the polymer material comprises an insulating polymer matrix, and the conductive encapsulation layer comprises conductive nanostructures.
2. The light emitting device of claim 1 , wherein the conductive nanostructures having at least one dimension which is less than 1 micron embedded in the insulating polymer matrix.
3. The light emitting device of claim 1 , wherein the conductive nanostructures comprise electrically conductive nanoparticles or nanowires.
4. The light emitting device of claim 1 , wherein the conductive nanostructures comprise electrically conductive nanowires having an average length-to-width ratio in a range from 10 to 1.0×10 6 .
5. The light emitting device of claim 4 , wherein the electrically conductive nanowires comprise silver nanowires.
6. The light emitting device of claim 1 , wherein the conductive nanostructures comprise carbon nanotubes.
7. The light emitting device of claim 1 , wherein an amount of the conductive nanostructures in the conductive encapsulation layer is above a percolation threshold.
8. The light emitting device of claim 1 , wherein the insulating polymer matrix comprises a material selected from a polycarbonate polymer, a polymethyl methacrylate polymer, an acrylic polymer, a polyethylene terephthalate polymer, a polyethylene terephthalate glycol polymer, a polyvinyl chloride polymer, a silicone-based polymer, a cyclic olefin copolymer, a polyethylene polymer, a ionomer resin, a transparent polypropylene polymer, a fluorinated ethylene propylene polymer, a styrene methyl methacrylate polymer, a styrene acrylonitrile resin polymer, a polystyrene polymer, or a methyl methacrylate acrylonitrile butadiene styrene polymer.
9. The light emitting device of claim 1 , wherein the polymer material comprises an electrically conductive polymer material.
10. The light emitting device of claim 1 , further comprising a dielectric matrix layer located on the front side of the backplane and laterally surrounding the array of light emitting diodes, wherein a horizontal bottom surface of the conductive encapsulation layer contacts a horizontal top surface of the dielectric matrix layer.
11. The light emitting device of claim 1 , wherein the conductive encapsulation layer is not in direct contact with top surfaces of the array of light emitting diodes within the array of light emitting diodes.
12. The light emitting device of claim 1 , wherein the conductive encapsulation layer comprises a topmost surface that is more proximal to the backplane than topmost surfaces of the array of light emitting diodes.
13. The light emitting device of claim 1 , wherein each of the array of light emitting diodes comprises a conductive reflector configured to reflect light emitted from a respective active region toward a respective first doped semiconductor layer, and electrically connected to a respective doped semiconductor layer.
14. The light emitting device of claim 1 , wherein the light emitting device comprises a direct view display device.
15. A method of forming a light emitting device, the method comprising:
attaching an array of light emitting diodes to a front side of a backplane;
forming a dielectric matrix layer on the front side of the backplane and around the array of light emitting diodes, wherein sidewalls of light emitting diodes within the array of light emitting diodes are physically exposed; and
forming a conductive encapsulation layer over the dielectric matrix layer and directly on sidewalls of the array of light emitting diodes within the array of light emitting diodes,
wherein the conductive encapsulation layer comprises a polymer material, and
wherein the polymer material comprises an insulating polymer matrix, and the conductive encapsulation layer comprises conductive nanostructures.
16. The method of claim 15 , wherein:
each of the light emitting diodes comprises a stack of a first doped semiconductor layer, a second doped semiconductor layer, and an active region located between the first and the second doped semiconductor layers; and
the conductive encapsulation layer is formed directly on sidewalls of the first doped semiconductor layer.
17. The method of claim 15 , wherein:
the conductive nanostructures having at least one dimension which is less than 1 micron embedded in the insulating polymer matrix; and
forming the conductive encapsulation layer comprises spin coating a suspension comprising monomer units and the conductive nanostructures over the dielectric matrix layer below a top surface of the array of light emitting diodes followed by polymerizing the monomer units.
18. The method of claim 15 , wherein an amount of the conductive nanostructures in the conductive encapsulation layer is above a percolation threshold.
19. The method of claim 15 , wherein the conductive encapsulation layer comprises an electrically conductive polymer material.
20. A method of forming a light emitting device, comprising:
attaching an array of light emitting diodes to a front side of a backplane;
forming a dielectric matrix layer on the front side of the backplane and around the array of light emitting diodes, wherein sidewalls of light emitting diodes within the array of light emitting diodes are physically exposed; and
forming a conductive encapsulation layer over the dielectric matrix layer and directly on sidewalls of the array of light emitting diodes within the array of light emitting diodes,
wherein the conductive encapsulation layer comprises conductive nanostructures having at least one dimension which is less than 1 micron embedded in an insulating polymer matrix; and
wherein forming the conductive encapsulation layer comprises spin coating a suspension comprising monomer units and the conductive nanostructures over the dielectric matrix layer below a top surface of the array of light emitting diodes followed by polymerizing the monomer units.