Apparatuses and methods including memory access in cross point memory
View Patent ↗Some embodiments include apparatuses and methods having a memory cell, first and second conductive lines configured to access the memory cell, and a switch configured to apply a signal to one of the first and second conductive lines. In at least one of such embodiments, the switch can include a phase change material. Other embodiments including additional apparatuses and methods are described.
1. A method comprising:
forming a first group of conductive lines;
forming a second group of conductive lines;
forming memory cells, wherein the memory cells are formed such that each of the memory cells is located between a conductive line in the first group of conductive lines and a conductive line in the second groups of conductive lines; and
forming switches, wherein the switches are formed such that each of the switches is located between a conductive line in the first group of conductive lines and one or more conductive line in the second groups of conductive lines, wherein each of the switches includes a phase change material.
2. The method of claim 1 , further comprising:
forming a conductive segment coupled to a first conductive line in the first group of conductive lines and coupled to a second conductive line in the first group of conductive lines.
3. The method of claim 1 , wherein forming the first group of conductive lines includes forming a first conductive line having a first width and forming a second conductive line having a second width, such that the first width is greater than the second width.
4. The method of claim 1 , wherein forming the switches includes:
forming a first electrode of each of the switches that directly contacts a first conductive line in the first group conductive lines;
forming a phase change material directly contacting the first electrode; and
forming a second electrode of each of the switches, such that the second electrode directly contacts the phase change material and directly contacts a conductive line of the second group conductive lines.
5. A method comprising:
forming a first group of conductive lines such that each conductive line in the first group of conductive lines including a length in a first direction and a width in a second direction and such that the width of a first conductive line in the first group of conductive lines is greater the width of each of second conductive lines in the first group of conductive lines;
forming a second group of conductive lines such that each conductive line in the second group of conductive lines including a length in the second direction and such that the second group of conductive lines pass over the first group of conductive lines at cross points;
forming memory cells such that each of the memory cells is located between respective cross point of the cross points.
6. The method of claim 5 , wherein each of the memory cells includes a phase change material.
7. The method of claim 5 , further comprising:
forming switches at respective cross points of the first conductive line in the first group of conductive lines and the second group of conductive lines.
8. The method of claim 7 , further comprising:
forming an electrode of each of the switches such that the electrode directly contacts the first conductive line in the first group conductive lines.
9. The method of claim 8 , further comprising:
forming an additional electrode of each of the switches such that the additional electrode directly contacts a respective conductive line of the second group of conductive lines.
10. The method of claim 9 , further comprising:
forming a phase change material between the electrode and the additional electrode of each of the switches.
11. A method comprising:
forming a first group of conductive lines such that each conductive line in the first group of conductive lines including a length in a first direction;
forming a second group of conductive lines such that each conductive line in the second group of conductive lines including a length in a second direction, such that the second group of conductive lines pass over a first conductive line in the first group of conductive lines at first cross points and pass over second conductive lines in the first group of conductive lines at second cross points;
forming switches at the first cross points, each of the switches including a phase change material; and
forming phase change memory cells such that each of the phase change memory cells is located at respective cross point of the second cross points.
12. The method of claim 11 , wherein forming the switches includes:
forming a first electrode of each of the switches such that the first electrode contacts the first conductive line in the first group conductive lines.
13. The method of claim 12 , wherein forming the switches includes:
forming a second electrode of each of the switches such that the second electrode contacts a respective conductive line of the second group of conductive lines.
14. The method of claim 13 , wherein forming the switches includes:
forming the phase change material of a respective switch such that the phase change material contacts the first electrode of the respective switch and the second electrode of the respective switch.
15. The method of claim 14 , wherein forming the switches includes:
forming an additional phase change material contacting the second electrode; and
forming a third electrode between the phase change material and the additional phase change materials.
16. The method of claim 11 , wherein forming phase change memory cells includes:
forming a first electrode of each of the phase change memory cells such that the first electrode contacts a respective conductive line of the second conductive lines in the first group of conductive lines.
17. The method of claim 16 , wherein forming the phase change memory cells includes:
forming a second electrode of each of the phase change memory cells such that the second electrode contacts a respective conductive line of the second group of conductive lines.
18. The method of claim 17 , wherein forming the phase change memory cells includes forming a first phase change material contacting the first electrode.
19. The method of claim 18 , wherein forming the phase change memory cells includes:
forming a second phase change material contacting the second electrode; and
forming a third electrode between the first and second phase change materials.
20. The method of claim 19 , wherein forming the phase change memory cells includes forming a fourth electrode between the second phase change material and the third electrode.