Wideband filter including an acoustic resonator chip integrated with 3D inductors and a 3D transformer
A wideband filter includes a passive substrate and an acoustic resonator chip on the passive substrate. The wideband filter further includes a pair of 3D inductors and a 3D transformer on the passive substrate. The pair of 3D inductors and the 3D transformer are connected to the acoustic resonator chip.
1. A wideband filter, comprising:
a passive substrate;
a molding compound on the passive substrate;
an acoustic resonator chip on the passive substrate; and
a pair of 3D inductors and a 3D transformer on the passive substrate and connected to the acoustic resonator chip, the pair of 3D inductors comprising through mold vias on a surface of the passive substrate and extending to a surface of the molding compound, and the pair of 3D inductors are side-by-side with the acoustic resonator chip between the pair of 3D inductors, each on the surface of the passive substrate.
2. The wideband filter of claim 1 , further comprising a first ground component coupled to short a pair of outputs of the 3D transformer.
3. The wideband filter of claim 2 , further comprising a second ground component coupled to an output of the acoustic resonator chip and an output of a first inductor of the pair of 3D inductors.
4. The wideband filter of claim 3 , further comprising an input component coupled to an input of the acoustic resonator chip and an input of the first inductor of the pair of 3D inductors.
5. The wideband filter of claim 3 , further comprising an output component coupled to the output of the acoustic resonator chip and an output of a second inductor of the pair of 3D inductors.
6. The wideband filter of claim 1 , in which the acoustic resonator chip is a bulk acoustic wave (BAW) resonator or a surface acoustic wave (SAW) resonator.
7. The wideband filter of claim 1 , in which the passive substrate comprises glass or diamond.
8. The wideband filter of claim 1 , in which a passband of the wideband filter is greater than 200 MHz.
9. A method of fabricating a wideband filter, the method comprising:
forming a passive substrate including a first redistribution layer (RDL);
forming conductive pillars on a surface of the passive substrate and coupled to the first RDL;
assembling an acoustic resonator chip on the surface of the passive substrate, in which each of the conductive pillars is taller than the acoustic resonator chip;
depositing a molding compound on the surface of the passive substrate, the molding compound surrounding the acoustic resonator chip and the conductive pillars;
exposing portions of the conductive pillars; and
forming a plurality of external interconnects coupled to the first RDL through the exposed portions of the conductive pillars to form a pair of 3D inductors and a 3D transformer on the passive substrate and connected to the acoustic resonator chip, the pair of 3D inductors comprising through mold vias on a surface of the passive substrate and extending to a surface of the molding compound, and the pair of 3D inductors are side-by-side with the acoustic resonator chip between the pair of 3D inductors, each on the surface of the passive substrate.
10. The method of claim 9 , further comprising forming a second RDL having a passivation layer, the second RDL between the molding compound and the plurality of the external interconnects and coupling the conductive pillars to the plurality of the external interconnects.
11. The method of claim 9 , in which forming the plurality of the external interconnects comprises forming a three-dimensional (3D) solenoidal inductor.
12. A radio frequency (RF) front-end (RFFE) device, comprising:
a wideband filter including a passive substrate, a molding compound on the passive substrate, an acoustic resonator chip on the passive substrate, and a pair of 3D inductors and a 3D transformer on the passive substrate and connected to the acoustic resonator chip, the pair of 3D inductors comprising through mold vias on a surface of the passive substrate and extending to a surface of the molding compound, and the pair of 3D inductors are side-by-side with the acoustic resonator chip between the pair of 3D inductors, each on the surface of the passive substrate; and
an antenna coupled to an output of the wideband filter.
13. The RFFE device of claim 12 , further comprising:
a first ground component coupled to short a pair of outputs of the 3D transformer; and
a second ground component coupled to an output of the acoustic resonator chip and an output of a first inductor of the pair of 3D inductors.
14. The RFFE device of claim 13 , further comprising an input component coupled to an input of the acoustic resonator chip and an input of the first inductor of the pair of 3D inductors.
15. The RFFE device of claim 13 , further comprising an output component coupled to the output of the acoustic resonator chip and an output of a second inductor of the pair of 3D inductors.
16. The RFFE device of claim 12 , in which the acoustic resonator chip is a bulk acoustic wave (BAW) resonator or a surface acoustic wave (SAW) resonator.
17. The RFFE device of claim 12 , in which a passband of the wideband filter is greater than 200 MHz.