Semiconductor device with support pattern
A semiconductor device including a plurality of pillars on a semiconductor substrate; and a support pattern in contact with some lateral surfaces of the pillars and connecting the pillars with one another, wherein the support pattern includes openings that expose other lateral surfaces of the pillars, each of the pillars includes a first pillar upper portion in contact with the support pattern and a second pillar upper portion spaced apart from the support pattern, and the second pillar upper portion has a concave slope.
1. A semiconductor device, comprising:
a plurality of pillars on a semiconductor substrate; and
a support pattern in contact with some lateral surfaces of the pillars and connecting the pillars with one another,
wherein:
the support pattern includes openings that expose other lateral surfaces of the pillars,
each of the pillars includes a first pillar upper portion in contact with the support pattern and a second pillar upper portion spaced apart from the support pattern, and
the second pillar upper portion has a concave slope.
2. The device as claimed in claim 1 , wherein a top end of the first pillar upper portion has the same height as that of a top end of the support pattern.
3. The device as claimed in claim 1 , wherein the second pillar upper portion is exposed in a corresponding one of the openings.
4. The device as claimed in claim 1 , wherein a lateral surface of the support pattern and a boundary between the first pillar upper portion and the second pillar upper portion define a planar circle or polygon shape, the lateral surface of the support pattern being exposed to the openings.
5. The device as claimed in claim 1 , wherein:
the support pattern includes a top surface and a bottom surface facing each other, and
a width of the bottom surface is greater than a width of the top surface.
6. The device as claimed in claim 1 , wherein each of the pillars is a bottom electrode and has a plug shape or a cup shape.
7. The device as claimed in claim 6 , further comprising a subsidiary support pattern below the support pattern and in contact with a sidewall of the bottom electrode,
wherein the subsidiary support pattern is spaced apart from the support pattern and has the same planar shape as that of the support pattern.
8. The device as claimed in claim 7 , wherein a top surface of the subsidiary support pattern has a height from the semiconductor substrate that is less than that of a bottom end of the concave slope.
9. The device as claimed in claim 1 , further comprising:
a dielectric layer conformally covering a surface of the support pattern and surfaces of the pillars; and
a top electrode on the dielectric layer.
10. The device as claimed in claim 1 , wherein a bottom surface of the support pattern has a height from the semiconductor substrate that is greater than that of a bottom end of the concave slope.
11. The device as claimed in claim 1 , wherein the concave slope forms a curved surface.
12. A semiconductor device, comprising:
a plurality of bottom electrodes on a semiconductor substrate; and
a support pattern in contact with some lateral surfaces of the bottom electrodes and connecting the bottom electrodes with one another,
wherein:
the support pattern includes openings that expose other lateral surfaces of the bottom electrodes, and
each of upper portions of the bottom electrodes has a partially concave slope.
13. The device as claimed in claim 12 , wherein the concave slope forms a curved surface.
14. The device as claimed in claim 12 , wherein a bottom surface of the support pattern has a height from the semiconductor substrate that is greater than that of a bottom end of the concave slope.
15. A semiconductor device, comprising:
a plurality of bottom electrodes on a semiconductor substrate; and
a support pattern in contact with some lateral surfaces of the bottom electrodes and connecting the bottom electrodes with one another,
wherein:
the support pattern includes an opening that exposes other lateral surfaces of the bottom electrodes,
each of upper portions of the bottom electrodes has a partially concave slope, and
a bottom surface of the support pattern is farther from the semiconductor substrate than a bottom end of the concave slope.
16. The device as claimed in claim 15 , further comprising a subsidiary support pattern below the support pattern and in contact with sidewalls of the bottom electrodes,
wherein:
the subsidiary support pattern is spaced apart from the support pattern and has the same planar shape as that of the support pattern, and
a top surface of the subsidiary support pattern is closer to the semiconductor substrate than the bottom end of the concave slope.
17. The device as claimed in claim 15 , wherein the concave slope of the bottom electrodes is exposed within the opening.
18. The device as claimed in claim 15 , wherein a top end of the concave slope and a lateral surface of the support pattern define a planar circle or polygon shape, the lateral surface of the support pattern being exposed to the opening.
19. The device as claimed in claim 15 , wherein an interval between upper portions of neighboring bottom electrodes exposed to the opening is greater than an interval between lower portions of the neighboring bottom electrodes.
20. The device as claimed in claim 15 , wherein the concave slope forms a curved surface.