Semiconductor memory device having a multi-region semiconductor layer
A semiconductor memory device includes conductive layers and insulation layers alternately stacked along a first direction. A core member extends through the insulation layers and conductive layers. A semiconductor layer on an outer periphery of the core member has a first region facing a conductive layer of the stack and a second region adjacent to the first region and facing an insulation layer. The first region has a first thickness and a first impurity concentration. The second region has a second thickness that is greater than the first thickness and a second impurity concentration that is different from the first impurity concentration. A charge accumulation film is between the semiconductor layer and the conductive layer in a second direction crossing the first direction.
1. A semiconductor memory device, comprising:
a plurality of conductive layers;
a plurality of insulation layers alternately stacked along a first direction with the plurality of conductive layers, each conductive layer being between a pair of insulation layers in the first direction;
a core member extending in the first direction through the plurality of insulation layers and the plurality of conductive layers;
a semiconductor layer on an outer periphery of the core member and including a first region facing, in a second direction crossing the first direction, one of the conductive layers and a second region adjacent, in the first direction, to the first region and facing, in the second direction, one of the insulation layers, the first region having a first thickness along the second direction from the outer periphery of the core member and a first impurity concentration, the second region having a second thickness along the second direction from the outer periphery of the core member that is greater than the first thickness and a second impurity concentration different from the first impurity concentration; and
a charge accumulation film between the semiconductor layer and the conductive layer in the second direction.
2. The semiconductor memory device according to claim 1 , wherein
the first impurity concentration is n type, and
the second impurity concentration is n+ type.
3. The semiconductor memory device according to claim 2 , wherein the first impurity concentration for n-type dopants is in range of 1×10 17 cm −3 to 1×10 19 cm −3 .
4. The semiconductor memory device according to claim 2 , wherein the second impurity concentration for n-type dopants is in a range of 1×10 19 cm −3 to 1×10 21 cm −3 .
5. The semiconductor memory device according to claim 1 , wherein
the first impurity concentration is p type, and
the second impurity concentration is n+ type.
6. The semiconductor memory device according to claim 1 , wherein
the first and second regions are doped with an impurity of a first type,
the first and second impurity concentrations are levels of the impurity of the first type, and
the second impurity concentration is greater than the first impurity concentration.
7. The semiconductor memory device according to claim 1 , wherein the first thickness is in a range of 1 nm to 5 nm.
8. The semiconductor memory device according to claim 1 , wherein the second thickness is at least 3 nm thicker than the first thickness.
9. The semiconductor memory device according to claim 1 , wherein the semiconductor layer is polycrystalline silicon.
10. The semiconductor memory device according to claim 1 , wherein the second region is doped with phosphorus or arsenic.
11. The semiconductor memory device according to claim 1 , wherein the core member is an insulating material.
12. The semiconductor memory device according to claim 1 , wherein the first and second regions are in direct contact with each other.
13. A semiconductor memory device, comprising:
a stack of insulating layers and conductive layers alternating with one another along a first direction orthogonal to layer planes of the insulating and conductive layers; and
a plurality of core members spaced from each other in a second direction parallel to the layer planes of the insulating and conductive layers, each core member extending through the stack in the first direction, wherein
a first semiconductor portion is on an outer periphery of each core member between the core member and each conductive layer in the stack in the second direction, the first semiconductor portion having a first thickness in the second direction from the core member and a first impurity concentration, and
a second semiconductor portion is on the outer periphery of each core member between the core member and each insulating layer in the stack, the second semiconductor portion having a second thickness in the second direction from the core member that is greater than the first thickness and a second impurity concentration that is different from the first impurity concentration.
14. The semiconductor memory device according to claim 13 , wherein
the first impurity concentration is n type, and
the second impurity concentration is n+ type.
15. The semiconductor memory device according to claim 13 , wherein
the first impurity concentration is p type, and
the second impurity concentration is n+ type.
16. The semiconductor memory device according to claim 13 , further comprising:
a charge accumulation film between the first semiconductor portions and the conductive layers in the second direction and between the second semiconductor portions and the insulating layers in the second direction.