Crystalline multilayer structure and semiconductor device
Provided is a crystalline multilayer structure having good semiconductor properties. The crystalline multilayer structure includes a base substrate and a corundum-structured crystalline oxide semiconductor thin film disposed directly on the base substrate or with another layer therebetween. The crystalline oxide semiconductor thin film is 0.1 μm or less in a surface roughness (Ra).
1. A crystalline oxide semiconductor film comprising:
a corundum-structured oxide semiconductor;
a surface roughness (Ra) that is 0.1 μm or less; and
a thickness that is 1 μm or more.
2. The crystalline oxide semiconductor film of claim 1 comprising:
a non-magnetic metal.
3. The crystalline oxide semiconductor film of claim 1 , wherein the crystalline oxide semiconductor film comprises at least gallium.
4. A semiconductor device comprising:
the crystalline oxide semiconductor film of claim 3 ; and
an electrode arranged on the crystalline oxide semiconductor film.
5. The crystalline oxide semiconductor film of claim 1 , wherein the crystalline oxide semiconductor film is at least partially doped.
6. A semiconductor device comprising:
the crystalline oxide semiconductor film of claim 5 ; and
an electrode arranged on the crystalline oxide semiconductor film.
7. The crystalline oxide semiconductor film of claim 1 comprising:
a dopant.
8. The crystalline oxide semiconductor film of claim 7 , wherein the dopant is at least one selected from Ge, Sn, Si, Ti, Zr and Hf.
9. A semiconductor device comprising:
the crystalline oxide semiconductor film of claim 8 ; and
an electrode arranged on the crystalline oxide semiconductor film.
10. A semiconductor device comprising:
the crystalline oxide semiconductor film of claim 7 ; and
an electrode arranged on the crystalline oxide semiconductor film.
11. The crystalline oxide semiconductor film of claim 1 , further comprising an insulating film.
12. The crystalline oxide semiconductor film of claim 11 , wherein the crystalline oxide semiconductor film laminated on the insulating film has a multilayer structure.
13. A semiconductor device comprising:
the crystalline oxide semiconductor film of claim 11 ; and
an electrode arranged on the insulating film.
14. The crystalline oxide semiconductor film of claim 1 comprising:
at least one selected from Br and I.
15. The crystalline oxide semiconductor film of claim 1 comprising:
α-Ga 2 O 3 .
16. A semiconductor device comprising:
the crystalline oxide semiconductor film of claim 1 ; and
an electrode arranged on the crystalline oxide semiconductor film.
17. A semiconductor device comprising:
a crystalline oxide semiconductor film comprising a corundum-structured oxide semiconductor, a surface roughness (Ra) that is 0.1 μm or less, and a thickness that is 1 μm or more.
18. The semiconductor device of claim 17 , wherein the crystalline oxide semiconductor film comprising at least gallium and a dopant.
19. The semiconductor device of claim 18 comprising:
an electrode electrically connected to the crystalline oxide semiconductor film.
20. The semiconductor device of claim 17 comprising:
an insulating film arranged on the crystalline oxide semiconductor film.