Power semiconductor device
A power semiconductor device including a substrate having an active region and a terminal region is provided. The terminal region surrounds the active region. A first epitaxial layer is disposed on the substrate in the active region and the terminal region. A second epitaxial layer is disposed on the first epitaxial layer. The second epitaxial layer includes a first termination trench, a second termination trench, and a third termination trench. The first termination trench is disposed in the terminal region and is adjacent to the active region. The second termination trench is disposed in the terminal region. The third termination trench is disposed in the terminal region. The second termination trench is located between the first termination trench and the third termination trench. The third termination trench has a third electrode electrically connected to a drain.
1. A power semiconductor device, comprising:
a substrate, having an active region and a terminal region, the terminal region surrounding the active region;
a first epitaxial layer, disposed on the substrate in the active region and the terminal region; and
a second epitaxial layer, disposed on the first epitaxial layer, wherein a doping concentration of the second epitaxial layer is greater than a doping concentration of the first epitaxial layer, wherein the second epitaxial layer comprises:
a first termination trench, disposed in the terminal region and adjacent to the active region;
a second termination trench, disposed in the terminal region; and
a third termination trench, disposed in the terminal region, wherein the second termination trench is located between the first termination trench and the third termination trench, and the third termination trench has a third electrode electrically connected to a drain.
2. The power semiconductor device as claimed in claim 1 , wherein the first termination trench has a first electrode being electrically connected to a source.
3. The power semiconductor device as claimed in claim 1 , wherein the second termination trench has a second electrode being electrically connected to a source or electrically floating.
4. The power semiconductor device as claimed in claim 1 , wherein a distance between the first termination trench and the second termination trench is greater than a distance between the second termination trench and the third termination trench.
5. The power semiconductor device as claimed in claim 1 , further comprising a plurality of active trenches, disposed in the second epitaxial layer in the active region, extending in a first direction, and alternately arranged along a second direction, wherein the first direction is different from the second direction.
6. The power semiconductor device as claimed in claim 5 , wherein the first termination trench and the active trenches are separated from each other.
7. The power semiconductor device as claimed in claim 5 , wherein the first termination trench and the active trenches are connected to each other.
8. The power semiconductor device as claimed in claim 1 , wherein the first termination trench, the second termination trench, and the third termination trench are separated from each other.
9. The power semiconductor device as claimed in claim 1 , wherein the first termination trench, the second termination trench, and the third termination trench further extend into the first epitaxial layer.