Fabricated two-sided millimeter wave antenna using through-silicon-vias
A system may include a first semiconductor substrate having a first side and a second side opposite the first side. The system may further include multiple device layers positioned on the first side of the substrate. The system may also include a first portion of an antenna structure positioned within at least one of the multiple device layers. The system may include a second portion of the antenna structure positioned over the second side of the substrate. The system may further include a via passing through the substrate and electrically coupling the first portion of the antenna structure to the second portion of the antenna structure.
1. A system comprising:
a first semiconductor device having a first side and a second side opposite the first side;
a mold compound region adjacent to the semiconductor device;
a redistribution layer positioned on the first side of the semiconductor device;
a first portion of an antenna structure formed within the redistribution layer;
a second portion of the antenna structure positioned over the second side of the first semiconductor device; and
a via passing through the mold compound region and electrically coupling the first portion of the antenna structure to the second portion of the antenna structure.
2. The system of claim 1 , further comprising:
one or more intervening layers between the second portion of the antenna and the mold compound region.
3. The system of claim 1 , further comprising:
a second semiconductor device stacked onto the first semiconductor device.
4. The system of claim 3 , further comprising:
one or more intervening semiconductor devices positioned between the first semiconductor device and the second semiconductor device.
5. The system of claim 1 , wherein the redistribution layer includes a first sublayer and a second sublayer.
6. The system of claim 1 , wherein the antenna structure is a millimeter wave antenna.
7. The system of claim 2 , wherein the one or more intervening layers includes additional mold compound.
8. The system of claim 2 , wherein the one or more intervening layers includes radio frequency shielding.
9. The system of claim 2 , wherein the one or more intervening layers includes insulator barriers.
10. The system of claim 3 , wherein the second portion of the antenna structure is positioned on the second semiconductor device.
11. The system of claim 3 , wherein the second semiconductor device corresponds to a packaged device.
12. The system of claim 3 , wherein the second semiconductor device is coupled to the first semiconductor device in a package-on-package configuration.
13. The system of claim 3 , wherein a stack interconnect structure electrically couples the second semiconductor device to the first semiconductor device.
14. The system of claim 4 , wherein the second semiconductor device and the intervening semiconductor devices are coupled to the first semiconductor device in a package-on-package configuration.
15. The system of claim 4 , wherein each of the intervening semiconductor devices has a substrate and a via passing through the substrate.
16. The system of claim 15 , wherein the first portion of the antenna structure is electrically coupled to the second portion of the antenna structure by the via.
17. The system of claim 5 , wherein the first sublayer is configured to route a set of connections from the first semiconductor device to a surface mount coupling structure.
18. The system of claim 17 , wherein the surface mount coupling structure includes a ball grid array.
19. The system of claim 5 , wherein the second sublayer includes the first portion of the antenna.