Semiconductor device and method of forming double-sided rectifying antenna on power module
A semiconductor device has a substrate and a first electrical interconnect structure formed over a first surface of the substrate. A second electrical interconnect structure is formed over a second surface of the substrate. An electrical component is disposed over the first surface of the substrate or over the second surface of the substrate. A first antenna is formed over the first electrical interconnect structure. A second antenna is formed over the second electrical interconnect structure. The first electrical interconnect structure has an insulating material formed over the first surface of the substrate, and a conductive via formed through the insulating material. Alternatively, the first electrical interconnect structure has an insulating layer formed over the first surface of the substrate, a conductive layer formed over the insulating layer, and a conductive via formed through the insulating layer and conductive layer.
1 . A semiconductor device, comprising:
a substrate;
a first electrical interconnect structure formed over a first surface of the substrate;
a first conductive via extending through the substrate and further extending through the first electrical interconnect structure;
a second electrical interconnect structure formed over a second surface of the substrate opposite the first surface of the substrate;
a device layer formed over the second electrical interconnect structure;
a second conductive via extending through the device layer;
a first antenna formed over the first electrical interconnect structure; and
a second antenna formed over the device layer.
2 . The semiconductor device of claim 1 , wherein the device layer includes an electrical component disposed over the second surface of the substrate.
3 . The semiconductor device of claim 2 , wherein the device layer further includes
an insulating material formed over the electrical component and second surface of the substrate.
4 . The semiconductor device of claim 1 , further including:
an insulating layer formed over the first surface of the substrate or over the second surface of the substrate;
a conductive layer formed over the insulating layer; and
a conductive via formed through the insulating layer and conductive layer.
5 . The semiconductor device of claim 1 , wherein the first electrical interconnect structure and second electrical interconnect structure and first antenna and second antenna are each disposed at a different vertical displacement from the substrate.
6 . The semiconductor device of claim 1 , wherein the first electrical interconnect structure and second electrical interconnect structure provide isolation between the first antenna and second antenna.
7 . A semiconductor device, comprising:
a substrate;
a first antenna disposed over a first surface of the substrate; and
a second antenna disposed over a second surface of the substrate opposite the first surface of the substrate and adapted to operate simultaneously with the first antenna and at a different frequency from the first antenna;
further including:
a first electrical interconnect structure formed over the first surface of the substrate;
a first conductive via extending through the substrate and first electrical interconnect structure;
a second electrical interconnect structure formed over the second surface of the substrate;
a device layer formed over the second electrical interconnect structure; and
a second conductive via extending through the device layer.
8 . The semiconductor device of claim 7 , further including an electrical component disposed over the first surface of the substrate or over the second surface of the substrate.
9 . The semiconductor device of claim 7 , wherein the device layer includes
an insulating material formed over the second surface of the substrate.
10 . The semiconductor device of claim 7 , further including:
an insulating layer formed over the first surface of the substrate or over the second surface of the substrate;
a conductive layer formed over the insulating layer; and
a conductive via formed through the insulating layer and conductive layer.
11 . The semiconductor device of claim 7 , wherein the first electrical interconnect structure and second electrical interconnect structure and first antenna and second antenna are each disposed at a different vertical displacement from the substrate.
12 . The semiconductor device of claim 7 , wherein the first electrical interconnect structure and second electrical interconnect structure provide isolation between the first antenna and second antenna.
13 . A method of making a semiconductor device, comprising:
providing a substrate;
forming a first electrical interconnect structure over a first surface of the substrate;
forming a first conductive via extending through the substrate and first electrical interconnect structure;
forming a second electrical interconnect structure over a second surface of the substrate opposite the first surface of the substrate;
forming a first antenna over the first electrical interconnect structure; and
forming a second antenna over the second electrical interconnect structure.
14 . The method of claim 13 , further including disposing an electrical component over the first surface of the substrate or over the second surface of the substrate.
15 . The method of claim 13 , further including:
forming an insulating material over the first surface of the substrate or over the second surface of the substrate; and
forming a conductive via through the insulating material.
16 . The method of claim 13 , further including:
forming an insulating layer over the first surface of the substrate or over the second surface of the substrate;
forming a conductive layer over the insulating layer; and
forming a conductive via through the insulating layer and conductive layer.
17 . The method of claim 13 , wherein the first electrical interconnect structure and second electrical interconnect structure and first antenna and second antenna are each disposed at a different vertical displacement from the substrate.
18 . The method of claim 13 , wherein the first electrical interconnect structure and second electrical interconnect structure provide isolation between the first antenna and second antenna.
19 . The method of claim 13 , further including:
forming a device layer over the second electrical interconnect structure; and
forming a second conductive via extending through the device layer, wherein the second antenna is formed over the device layer.
20 . A method of making a semiconductor device, comprising:
providing a substrate;
disposing a first antenna over a first surface of the substrate;
disposing a second antenna over a second surface of the substrate opposite the first surface of the substrate and adapted to operate simultaneously with the first antenna and at a different frequency from the first antenna;
forming a first electrical interconnect structure over the first surface of the substrate;
a second electrical interconnect structure formed over the second surface of the substrate;
forming a device layer over the second electrical interconnect structure; and
forming a second conductive via extending through the device layer, wherein the second antenna is formed over the device layer.
21 . The method of claim 20 , further including disposing an electrical component over the first surface of the substrate or over the second surface of the substrate.
22 . The method of claim 20 , further including:
forming an insulating material over the first surface of the substrate or over the second surface of the substrate; and
forming a conductive via through the insulating material.
23 . The method of claim 20 , further including:
forming an insulating layer over the first surface of the substrate or over the second surface of the substrate;
forming a conductive layer over the insulating layer; and
forming a conductive via through the insulating layer and conductive layer.
24 . The method of claim 20 , wherein the first electrical interconnect structure and second electrical interconnect structure and first antenna and second antenna are each disposed at a different vertical displacement from the substrate.