Etching method and workpiece processing method

1. An etching method of etching a silicon-containing film having a single silicon oxide film or having multiple silicon oxide films and multiple silicon nitride films alternately stacked on top of each other,

wherein the etching method is performed in a state that a workpiece having the silicon-containing film is placed within a chamber main body of a plasma processing apparatus,

the workpiece further includes a mask provided on the silicon-containing film, and

the mask contains carbon and includes an opening,

wherein the etching method comprises:

forming a tungsten film on a region including a top surface of the mask; and

etching the silicon-containing film,

wherein the forming of the tungsten film comprises:

supplying a gaseous tungsten-containing precursor onto the workpiece to form the tungsten-containing precursor on the workpiece; and

generating plasma from a hydrogen-containing gas to supply hydrogen active species to the precursor on the workpiece, and

in the etching of the silicon-containing film, plasma is generated from a processing gas containing fluorine, hydrogen, and carbon within the chamber main body to etch the silicon-containing film.

2. The etching method of claim 1 ,

wherein the forming of the tungsten film and the etching of the silicon-containing film are repeated alternately.

3. The etching method of claim 1 ,

wherein the supplying of the gaseous precursor and the generating of the plasma from the hydrogen-containing gas are repeated alternately in the forming of the tungsten film.

4. The etching method of claim 1 ,

wherein each of the forming of the tungsten film and the etching of the silicon-containing film includes setting a temperature of the workpiece to be equal to or less than 0° C.

5. The etching method of claim 4 ,

wherein each of the forming of the tungsten film and the etching of the silicon-containing film includes setting the temperature of the workpiece to be equal to or less than −20° C.

6. The etching method of claim 1 ,

wherein the gaseous precursor is a halogenated tungsten gas.

7. The etching method of claim 6 ,

wherein the gaseous precursor is a tungsten hexafluoride gas.

8. A workpiece processing method, comprising:

preparing a workpiece having a silicon-containing film and a mask provided on the silicon-containing film;

setting a temperature of the workpiece to be equal to or less than 20° C.; and

forming a tungsten-containing film on a region including a top surface of the mask,

wherein the forming of the tungsten-containing film comprises:

supplying a gaseous tungsten-containing precursor onto the workpiece to form the tungsten-containing precursor on the workpiece; and

generating plasma from a hydrogen-containing gas to supply hydrogen active species to the precursor on the workpiece.

9. The workpiece processing method of claim 8 , further comprising

etching the silicon-containing film after the forming of the tungsten-containing film.

10. The workpiece processing method of claim 9 ,

wherein the forming of the tungsten-containing film and the etching of the silicon-containing film are performed in a same chamber main body.

11. The workpiece processing method of claim 8 ,

wherein the forming of the tungsten-containing film includes supplying a carrier gas.

12. The workpiece processing method of claim 8 ,

wherein the setting of the temperature of the workpiece includes setting the temperature of the workpiece to be equal to or less than 0° C.

13. The workpiece processing method of claim 8 ,

wherein the setting of the temperature of the workpiece includes setting the temperature of the workpiece to be equal to or less than −20° C.

14. The workpiece processing method of claim 8 ,

wherein the tungsten-containing film is formed on a top surface and a side surface of the mask.

15. An etching method of etching a silicon-containing film having a single silicon oxide film or having multiple silicon oxide films and multiple silicon nitride films alternately stacked on top of each other,

wherein the etching method is performed in a state that a workpiece having the silicon-containing film is placed within a chamber main body of a plasma processing apparatus,

the workpiece further includes a mask provided on the silicon-containing film, and

the mask contains carbon and includes an opening,

wherein the etching method comprises:

forming a tungsten film on a region including a top surface of the mask; and

etching the silicon-containing film,

wherein the forming of the tungsten film and the etching of the silicon-containing film are repeated alternately,

each of the forming of the tungsten film and the etching of the silicon-containing film includes setting a temperature of the workpiece to be equal to or less than 0° C.,

the forming of the tungsten film comprises:

supplying a gaseous tungsten-containing precursor onto the workpiece to form the tungsten-containing precursor on the workpiece; and

generating plasma from a hydrogen-containing gas to supply hydrogen active species to the gaseous precursor on the workpiece,

wherein the supplying of the gaseous precursor and the generating of the plasma from the hydrogen-containing gas are repeated alternately in the forming of the tungsten film,

the gaseous precursor is a halogenated tungsten gas, and

in the etching of the silicon-containing film, plasma is generated from a processing gas containing fluorine, hydrogen, and carbon within the chamber main body to etch the silicon-containing film.

16. The etching method of claim 1 ,

wherein a thickness of the tungsten film on a top surface of the mask is thicker than a thickness of the tungsten film on a bottom of the mask.

17. The workpiece processing method of claim 8 ,

wherein a thickness of the tungsten-containing film on a top surface of the mask is thicker than a thickness of the tungsten-containing film on a bottom of the mask.

18. The etching method of claim 16 ,

wherein the tungsten film is not formed on a surface of the silicon-containing film.