Coreless organic packages with embedded die and magnetic inductor structures
A coreless semiconductor package comprises a plurality of horizontal layers of dielectric material. A magnetic inductor is situated at least partly in a first group of the plurality of layers. A plated laser stop is formed to protect the magnetic inductor against subsequent acidic processes. An EMIB is situated above the magnetic inductor within a second group of the plurality of layers. Vias and interconnections are configured within the horizontal layers to connect a die of the EMIB to other circuitry. A first level interconnect is formed on the top side of the package to connect to the interconnections. BGA pockets and BGA pads are formed on the bottom side of the package. In a second embodiment a polymer film is used as additional protection against subsequent acidic processes. The magnetic inductor comprises a plurality of copper traces encapsulated in magnetic material.
1. A coreless semiconductor package comprising: a coreless plurality of layers of dielectric material in horizontal relationship with each other; a magnetic inductor at least partly embedded within a first group of the plurality of layers, wherein the magnetic inductor comprises a plurality of conductive traces encapsulated by magnetic material; an embedded multi-die interconnect bridge (EMIB) adjacent the magnetic inductor, the EMIB embedded within a second group of the plurality of layers; a plurality of vias and interconnections in the plurality of layers, configured to connect a die of the EMIB to other circuitry; a first level interconnect (FLI) on a first side of the package, the FLI configured to connect to at least some of the plurality of vias and interconnections; and a plurality of ball grid array (BGA) pockets and conductive BGA pads on a second side of the package opposite the first side of the package.
2. The coreless semiconductor package of claim 1 wherein the magnetic material comprises two different types of magnetic materials.
3. The coreless semiconductor package of claim 1 wherein the plurality of BGA pads comprises plated copper.
4. The coreless semiconductor package of claim 1 wherein the FLI comprises copper, copper-gold-palladium-silver, copper-nickel-silver, copper-tin, or copper-nickel-tin.
5. The coreless semiconductor package of claim 1 further comprising an organic solderability preservative deposited on at least some of the conductive BGA pads.
6. The coreless semiconductor package of claim 1 further comprising a conductive laser stop plated on a BU layer adjacent the magnetic inductor, the conductive laser stop configured to protect the magnetic inductor from chemistry process steps that are performed on at least some of the plurality of layers.
7. An electronic device comprising: one or more processor cores; memory; and a memory controller, wherein at least one of the one or more processor cores, memory, or memory controller includes a coreless semiconductor package comprising: a coreless plurality of layers of dielectric material in horizontal relationship with each other; a magnetic inductor at least partly embedded within a first group of the plurality of layers, wherein the magnetic inductor comprises a plurality of conductive traces encapsulated in magnetic material; an embedded multi-die interconnect bridge (EMIB) adjacent the magnetic inductor, the EMIB embedded within a second group of the plurality of layers; a plurality of vias and interconnections in the plurality of layers, configured to connect a die of the EMIB to other circuitry; a first level interconnect (FLI) on a first side of the package, the FLI configured to connect to at least some of the plurality of vias and interconnections; and a plurality of ball grid array (BGA) pockets and conductive BGA pads on a second side of the package opposite the first side of the package.
8. The electronic device of claim 7 wherein the magnetic material comprises two different types of magnetic materials.
9. The electronic device of claim 7 the method further comprising plating a conductive laser stop on a BU layer adjacent the magnetic inductor.
10. The electronic device of claim 7 wherein the FLI comprises copper, copper-gold-palladium-silver, copper-nickel-silver, copper-tin, or copper-nickel-tin.
11. The electronic device of claim 7 further comprising an organic solderability preservative deposited on at least some of the conductive BGA pads.